Abstract: A plasma etching device including a supply path supplying temperature adjustment gas into a process chamber, wherein the temperature adjustment gas is supplied, and a temperature of an interior of the process chamber is controlled, is disclosed. After etching of a wafer is completed, a control valve of the supply path is opened, and the temperature adjustment gas is supplied into the process chamber. A temperature of the temperature adjustment gas is adjusted to a target gas temperature corresponding to an ambient temperature of the interior of the process chamber, or the like. The high-temperature gas remaining in the process chamber is replaced by the temperature adjustment gas supplied from respective nozzle ports, whereby the interior of the process chamber can be cooled to a target temperature with high accuracy in a short amount of time.

Abstract: A plasma etching device including a supply path supplying temperature adjustment gas into a process chamber, wherein the temperature adjustment gas is supplied, and a temperature of an interior of the process chamber is controlled, is disclosed. After etching of a wafer is completed, a control valve of the supply path is opened, and the temperature adjustment gas is supplied into the process chamber. A temperature of the temperature adjustment gas is adjusted to a target gas temperature corresponding to an ambient temperature of the interior of the process chamber, or the like. The high-temperature gas remaining in the process chamber is replaced by the temperature adjustment gas supplied from respective nozzle ports, whereby the interior of the process chamber can be cooled to a target temperature with high accuracy in a short amount of time.