Abstract: A silicon carbide semiconductor device includes: a trench formed on an upper surface of a silicon carbide semiconductor substrate; a gate electrode in the trench; an n-type drift layer, a p-type guard region, an n-type semiconductor region to which a source potential is applied, a p-type body layer and an n-type current diffusion region that have a lower impurity concentration than that of the guard region, the n-type drift layer, the p-type guard region, the n-type semiconductor region, the p-type body layer, and the n-type current diffusion region being formed in the silicon carbide semiconductor substrate; and an n-type JFET region that is formed in the silicon carbide semiconductor substrate so as to be separated from the trench and that connects the current diffusion region and the drift layer. The semiconductor region is separated from the drift layer, the current diffusion region, and the JFET region.

Abstract: A method for producing a compound represented by formula (1), the method comprising: mixing a compound represented by formula (2) and a compound represented by formula (3) in the presence of a base to react the two.

Abstract: The purpose of the present invention is to provide a mesoionic compound, which exhibits an improved controlling effect on various harmful organisms, or a salt thereof. A mesoionic compound represented by formula (1) (wherein: R1 is selected from a hydrogen atom, etc.; R2 represents an optionally substituted phenyl group; R3 is selected from a hydrogen atom, etc.; R4 is selected from a hydrogen atom, etc.; R5 is selected from an optionally substituted ethylene group, etc.; and X is selected from an oxygen atom, etc.) or a salt thereof.

Abstract: The purpose of the present invention is to provide a mesoionic compound or a salt thereof that exhibits excellent control activity against various pests. Provided is a mesoionic compound represented by formula (1).