Abstract: A method for depositing material is disclosed. An exemplary method includes positioning a substrate provided with a stepped structure comprising a top surface, a bottom surface, and a sidewall in a reaction chamber; controlling a pressure of the reaction chamber to a process pressure; providing a precursor; providing a reactant; and, providing a plasma with a RF plasma power, wherein by simultaneously providing the precursor, the reactant, and the plasma while controlling the process pressure to less than or equal to 200 Pa and controlling the RF plasma power to more than or equal to 0.21 W per cm2 the material is deposited on the top surface, the bottom surface, and the sidewall of the stepped structure.

Abstract: A method for forming a precoat film on a metal surface in a chamber before forming a silicon-containing film having an identical composition system with that of the precoat film on a substrate in the chamber using a PECVD method, wherein the precoat film is formed using a PEALD method in which a first gas and a second gas are supplied into the chamber by shifting timing of supply, the PEALD method comprises an adsorption step comprising supplying the first gas into the chamber so that the source gas component adsorbs on the metal surface, a first purge step comprising discharging an excessive source gas component not adsorbed on the metal surface, and a precoat film forming step comprising supplying the second gas into the chamber and applying high-frequency power to generate plasma in the reactant gas component in the second gas.

Abstract: A method for depositing material is disclosed. An exemplary method includes positioning a substrate provided with a stepped structure comprising a top surface, a bottom surface, and a sidewall in a reaction chamber; controlling a pressure of the reaction chamber to a process pressure; providing a precursor; providing a reactant; and, providing a plasma with a RF plasma power, wherein by simultaneously providing the precursor, the reactant, and the plasma while controlling the process pressure to less than or equal to 200 Pa and controlling the RF plasma power to more than or equal to 0.21 W per cm2 the material is deposited on the top surface, the bottom surface, and the sidewall of the stepped structure.

Abstract: A method for forming a precoat film on a metal surface in a chamber before forming a silicon-containing film having an identical composition system with that of the precoat film on a substrate in the chamber using a PECVD method, wherein the precoat film is formed using a PEALD method in which a first gas and a second gas are supplied into the chamber by shifting timing of supply, the PEALD method comprises an adsorption step comprising supplying the first gas into the chamber so that the source gas component adsorbs on the metal surface, a first purge step comprising discharging an excessive source gas component not adsorbed on the metal surface, and a precoat film forming step comprising supplying the second gas into the chamber and applying high-frequency power to generate plasma in the reactant gas component in the second gas.