Abstract: A silicon carbide semiconductor device includes: a trench formed on an upper surface of a silicon carbide semiconductor substrate; a gate electrode in the trench; an n-type drift layer, a p-type guard region, an n-type semiconductor region to which a source potential is applied, a p-type body layer and an n-type current diffusion region that have a lower impurity concentration than that of the guard region, the n-type drift layer, the p-type guard region, the n-type semiconductor region, the p-type body layer, and the n-type current diffusion region being formed in the silicon carbide semiconductor substrate; and an n-type JFET region that is formed in the silicon carbide semiconductor substrate so as to be separated from the trench and that connects the current diffusion region and the drift layer. The semiconductor region is separated from the drift layer, the current diffusion region, and the JFET region.

Abstract: A semiconductor device includes: a semiconductor substrate having a drift layer of a first conductivity type, a body region of a second conductivity type, and a JFET region of the first conductivity type in contact with the body region on both sides on the drift layer; a plurality of trenches formed in an upper surface of the semiconductor substrate and extending in a first direction; and a gate electrode formed in the trenches and on the upper surface of the semiconductor substrate with an insulating film interposed therebetween. In a unit cell, a first trench group composed of a plurality of trenches lined up in a second direction that is orthogonal to the first direction and a second trench group composed of a plurality of trenches lined up in the second direction are lined up in the first direction, and have a channel region that is shallower than the trenches.

Abstract: A method for producing 2,2?-bis(carboxymethoxy)-1,1?-binaphthyl includes performing steps (i) to (iv) below in sequence using a 2,2?-bis(alkoxycarbonylmethoxy)-1,1?-binaphthyl as a starting material: (i) a hydrolysis reaction step, (ii) a step of distilling off a resulting alcohol represented by formula (3) above from a reaction system, (iii) a step of acidifying a reaction solution, and (iv) a step of precipitating 2,2?-bis(carboxymethoxy)-1,1?-binaphthyl in the presence of an organic solvent.

Abstract: An object is to provide a new method for producing an aromatic bis ether compound in an industrially stable manner and in high yield. As a solution, a method for producing an aromatic bis ether compound represented by formula (3), in which in a reaction between an aromatic dihydroxy compound (1) represented by formula (1) above and a halide (2) represented by formula (2) above, the amount of water in a reaction solution is 0.01 wt % or more and 1.5 wt % or less relative to the amount of the aromatic dihydroxy compound (1) in the reaction solution, is provided.

Abstract: In the present invention, in a FinFET having a channel forming region on a surface of a fin that is a semiconductor layer protruding on an upper surface of a substrate, a channel at a corner of the fin is prevented from becoming an ON state with a low voltage and a steep ON/OFF operation is made possible. As a means thereof, in a MOSFET that has a plurality of trenches, each of which have embedded therein a gate electrode, on an upper surface of an n-type epitaxial substrate provided with a drain region on a bottom surface and that has a channel region formed on a surface of a fin which is a protrusion part between the trenches adjacent to each other, a p-type body layer that constitutes a lateral surface of the fin, and a p+-type semiconductor region that constitutes a corner which is an end of the upper surface of the fin, are formed.

Abstract: A performance of a power semiconductor device is improved. A power semiconductor device including unit cells UR and UL cyclically arranged in an X direction and a Y direction perpendicular to each other and a plurality of end cells is used. The unit cells UR and UL are alternately arranged in the X direction, the plurality of end cells include an X-end cell XL, Y-end cells YR and YL, an XY-end cell XY1L, and an XY-end cell XY2L for an optional region, each number of arrangement cycles of the unit cells UR and UL in the Y direction changes depending on repetition cycle coordinates in the X direction, each of the cyclically-arranged unit cells UR and UL is adjacent to any of the plurality of end cells at an endmost portion of arrangement cycle in each of the X direction and the Y direction, and regions having the plurality of end cells are different in an electric property from the unit cells UR and UL.

Abstract: A silicon carbide semiconductor device comprises: a trench formed in an upper surface of a semiconductor layer and having first and second lateral surfaces opposing each other in a first direction along an upper surface of the semiconductor layer; a gate electrode on the inside of the trench with an insulating film therebetween; a body layer adjoining the first lateral surface; a current spread region adjoining each of the first and second lateral surfaces; and a guard region covering corners of a bottom surface of the trench on the first lateral surface side and spaced apart from corners of the bottom surface of the trench on the second lateral surface side. In a first direction, the film thickness of the insulating film covering the second lateral surface is greater than the film thickness of the insulating film covering the first lateral surface.

Abstract: A semiconductor device includes: a semiconductor substrate having a drift layer of a first conductivity type, a body region of a second conductivity type, and a JFET region of the first conductivity type in contact with the body region on both sides on the drift layer; a plurality of trenches formed in an upper surface of the semiconductor substrate and extending in a first direction; and a gate electrode formed in the trenches and on the upper surface of the semiconductor substrate with an insulating film interposed therebetween. In a unit cell, a first trench group composed of a plurality of trenches lined up in a second direction that is orthogonal to the first direction and a second trench group composed of a plurality of trenches lined up in the second direction are lined up in the first direction, and have a channel region that is shallower than the trenches.

Abstract: A silicon carbide semiconductor device includes: a trench formed on an upper surface of a silicon carbide semiconductor substrate; a gate electrode in the trench; an n-type drift layer, a p-type guard region, an n-type semiconductor region to which a source potential is applied, a p-type body layer and an n-type current diffusion region that have a lower impurity concentration than that of the guard region, the n-type drift layer, the p-type guard region, the n-type semiconductor region, the p-type body layer, and the n-type current diffusion region being formed in the silicon carbide semiconductor substrate; and an n-type JFET region that is formed in the silicon carbide semiconductor substrate so as to be separated from the trench and that connects the current diffusion region and the drift layer. The semiconductor region is separated from the drift layer, the current diffusion region, and the JFET region.

Abstract: In a SiC power MISFET having a lateral surface of a trench formed in an upper surface of a SiC epitaxial substrate as a channel region, a silicon carbide semiconductor device having low resistance, high performance, and high reliability is realized. As a means therefor, a SiC power MISFET is formed as an island-shaped unit cell on an upper surface of an n-type SiC epitaxial substrate that is provided with a drain region on a bottom surface thereof, the SiC power MISFET including: an n-type current diffusion region that surrounds a p-type body layer contact region and an n-type source region in the indicated order in a plan view; a p-type body layer and an n-type JFET region; a trench that is formed on the body layer so as to span between the source region and the current diffusion region adjacent each other in a first direction and extends in the first direction; and a gate electrode embedded in the trench with a gate insulating film therebetween.

Abstract: Abnormal generation of heat of a power MOSFET is detected to improve the reliability of a semiconductor device. As its means, in a power MOSFET having a drain electrode on the side of a back surface of a semiconductor substrate and a source pad on the side of a main surface of the semiconductor substrate, two gate pads electrically connected to a gate pad connected to a gate electrode of the power MOSFET are formed on the side of the main surface of the semiconductor substrate. Further, there is provided a voltmeter connected in parallel with each of two current paths which connect the two gate pads and a gate driver.

Abstract: In the present invention, in a FinFET having a channel forming region on a surface of a fin that is a semiconductor layer protruding on an upper surface of a substrate, a channel at a corner of the fin is prevented from becoming an ON state with a low voltage and a steep ON/OFF operation is made possible. As a means thereof, in a MOSFET that has a plurality of trenches, each of which have embedded therein a gate electrode, on an upper surface of an n-type epitaxial substrate provided with a drain region on a bottom surface and that has a channel region formed on a surface of a fin which is a protrusion part between the trenches adjacent to each other, a p-type body layer that constitutes a lateral surface of the fin, and a p+-type semiconductor region that constitutes a corner which is an end of the upper surface of the fin, are formed.

Abstract: A method for producing 2,2?-bis(carboxymethoxy)-1,1?-binaphthyl includes performing steps (i) to (iv) below in sequence using a 2,2?-bis(alkoxycarbonylmethoxy)-1,1?-binaphthyl as a starting material: (i) a hydrolysis reaction step, (ii) a step of distilling off a resulting alcohol represented by formula (3) above from a reaction system, (iii) a step of acidifying a reaction solution, and (iv) a step of precipitating 2,2?-bis(carboxymethoxy)-1,1?-binaphthyl in the presence of an organic solvent.

Abstract: Provided is a semiconductor device whose performance is improved. A p type body region is formed in an n type semiconductor layer containing silicon carbide, and a gate electrode is formed on the body region with a gate insulating film interposed therebetween. An n type source region is formed in the body region on a side surface side of the gate electrode, and the body region and a source region are electrically connected to a source electrode. A p type field relaxation layer FRL is formed in the semiconductor layer on the side surface side of the gate electrode, and the source electrode is electrically connected to the field relaxation layer FRL. The field relaxation layer FRL constitutes a part of the JFET 2Q which is a rectifying element, and a depth of the field relaxation layer FRL is shallower than a depth of the body region.

Abstract: A method for producing 2,2?-bis(carboxymethoxy)-1,1?-binaphthyl includes a separation step of separating a metal salt of 2,2?-bis(carboxymethoxy)-1,1?-binaphthyl from a reaction mixture by solid-liquid separation. In the method, a 2,2?-bis(alkoxycarbonylmethoxy)-1,1?-binaphthyl is used as a starting material.

Abstract: An object is to provide a new method for producing an aromatic bis ether compound in an industrially stable manner and in high yield. As a solution, a method for producing an aromatic bis ether compound represented by formula (3), in which in a reaction between an aromatic dihydroxy compound (1) represented by formula (1) above and a halide (2) represented by formula (2) above, the amount of water in a reaction solution is 0.01 wt % or more and 1.5 wt % or less relative to the amount of the aromatic dihydroxy compound (1) in the reaction solution, is provided.

Abstract: Abnormal generation of heat of a power MOSFET is detected to improve the reliability of a semiconductor device. As its means, in a power MOSFET having a drain electrode on the side of a back surface of a semiconductor substrate and a source pad on the side of a main surface of the semiconductor substrate, two gate pads electrically connected to a gate pad connected to a gate electrode of the power MOSFET are formed on the side of the main surface of the semiconductor substrate. Further, there is provided a voltmeter connected in parallel with each of two current paths which connect the two gate pads and a gate driver.

Abstract: In a SiC power MISFET having a lateral surface of a trench formed in an upper surface of a SiC epitaxial substrate as a channel region, a silicon carbide semiconductor device having low resistance, high performance, and high reliability is realized. As a means therefor, a SiC power MISFET is formed as an island-shaped unit cell on an upper surface of an n-type SiC epitaxial substrate that is provided with a drain region on a bottom surface thereof, the SiC power MISFET including: an n-type current diffusion region that surrounds a p-type body layer contact region and an n-type source region in the indicated order in a plan view; a p-type body layer and an n-type JFET region; a trench that is formed on the body layer so as to span between the source region and the current diffusion region adjacent each other in a first direction and extends in the first direction; and a gate electrode embedded in the trench with a gate insulating film therebetween.

Abstract: An aromatic polycarbonate oligomer solid contains a repeating unit represented by formula (1) and a repeating unit represented by formula (2), has a weight average molecular weight of 500 to 10,000, low-molecular-weight components less than or equal to 5.0 area % measured with high-speed liquid chromatography, and a loose bulk density of greater than or equal to 0.25 g/cm3. wherein R1, R2, R3, and R4 are independently a hydrogen atom or an alkyl group with 1 to 4 carbon atoms, and R5 and R6 are independently a hydrogen atom or an alkyl group with 1 to 12 carbon atoms. The aromatic polycarbonate oligomer solid has a substantially reduced amount of low-molecular-weight components, no or a substantially reduced amount of chlorine-containing compounds, high loose bulk density, and ease of handling.

Abstract: The purpose of the present invention is to provide an aromatic polycarbonate oligomer solid with substantially reduced low-molecular-weight components, no or a substantially reduced amount of chlorine-containing compounds, high loose bulk density, and ease of handling. The aromatic polycarbonate oligomer solid contains a repeating unit represented by formula (1), has a weight average molecular weight of 500 to 10,000, low-molecular-weight components less than or equal to 5.0 area % measured with high-speed liquid chromatography, and a loose bulk density of greater than or equal to 0.