Abstract: Abnormal generation of heat of a power MOSFET is detected to improve the reliability of a semiconductor device. As its means, in a power MOSFET having a drain electrode on the side of a back surface of a semiconductor substrate and a source pad on the side of a main surface of the semiconductor substrate, two gate pads electrically connected to a gate pad connected to a gate electrode of the power MOSFET are formed on the side of the main surface of the semiconductor substrate. Further, there is provided a voltmeter connected in parallel with each of two current paths which connect the two gate pads and a gate driver.

Abstract: An assistance device installed at a vehicle. The assistance device includes: a memory; and a processor coupled to the memory. The processor being configured to: receive information relating to a window opening point corresponding to a predetermined service, notify the service of proximity in a case in which the vehicle has reached a predetermined range from the window opening point, and open a window of the vehicle in a case in which the vehicle has approached the window opening point.

Abstract: In the present invention, in a FinFET having a channel forming region on a surface of a fin that is a semiconductor layer protruding on an upper surface of a substrate, a channel at a corner of the fin is prevented from becoming an ON state with a low voltage and a steep ON/OFF operation is made possible. As a means thereof, in a MOSFET that has a plurality of trenches, each of which have embedded therein a gate electrode, on an upper surface of an n-type epitaxial substrate provided with a drain region on a bottom surface and that has a channel region formed on a surface of a fin which is a protrusion part between the trenches adjacent to each other, a p-type body layer that constitutes a lateral surface of the fin, and a p+-type semiconductor region that constitutes a corner which is an end of the upper surface of the fin, are formed.

Abstract: A method for producing 2,2?-bis(carboxymethoxy)-1,1?-binaphthyl includes performing steps (i) to (iv) below in sequence using a 2,2?-bis(alkoxycarbonylmethoxy)-1,1?-binaphthyl as a starting material: (i) a hydrolysis reaction step, (ii) a step of distilling off a resulting alcohol represented by formula (3) above from a reaction system, (iii) a step of acidifying a reaction solution, and (iv) a step of precipitating 2,2?-bis(carboxymethoxy)-1,1?-binaphthyl in the presence of an organic solvent.

Abstract: Provided is a semiconductor device whose performance is improved. A p type body region is formed in an n type semiconductor layer containing silicon carbide, and a gate electrode is formed on the body region with a gate insulating film interposed therebetween. An n type source region is formed in the body region on a side surface side of the gate electrode, and the body region and a source region are electrically connected to a source electrode. A p type field relaxation layer FRL is formed in the semiconductor layer on the side surface side of the gate electrode, and the source electrode is electrically connected to the field relaxation layer FRL. The field relaxation layer FRL constitutes a part of the JFET 2Q which is a rectifying element, and a depth of the field relaxation layer FRL is shallower than a depth of the body region.

Abstract: A method for producing 2,2?-bis(carboxymethoxy)-1,1?-binaphthyl includes a separation step of separating a metal salt of 2,2?-bis(carboxymethoxy)-1,1?-binaphthyl from a reaction mixture by solid-liquid separation. In the method, a 2,2?-bis(alkoxycarbonylmethoxy)-1,1?-binaphthyl is used as a starting material.

Abstract: An object is to provide a new method for producing an aromatic bis ether compound in an industrially stable manner and in high yield. As a solution, a method for producing an aromatic bis ether compound represented by formula (3), in which in a reaction between an aromatic dihydroxy compound (1) represented by formula (1) above and a halide (2) represented by formula (2) above, the amount of water in a reaction solution is 0.01 wt % or more and 1.5 wt % or less relative to the amount of the aromatic dihydroxy compound (1) in the reaction solution, is provided.

Abstract: Abnormal generation of heat of a power MOSFET is detected to improve the reliability of a semiconductor device. As its means, in a power MOSFET having a drain electrode on the side of a back surface of a semiconductor substrate and a source pad on the side of a main surface of the semiconductor substrate, two gate pads electrically connected to a gate pad connected to a gate electrode of the power MOSFET are formed on the side of the main surface of the semiconductor substrate. Further, there is provided a voltmeter connected in parallel with each of two current paths which connect the two gate pads and a gate driver.

Abstract: In a SiC power MISFET having a lateral surface of a trench formed in an upper surface of a SiC epitaxial substrate as a channel region, a silicon carbide semiconductor device having low resistance, high performance, and high reliability is realized. As a means therefor, a SiC power MISFET is formed as an island-shaped unit cell on an upper surface of an n-type SiC epitaxial substrate that is provided with a drain region on a bottom surface thereof, the SiC power MISFET including: an n-type current diffusion region that surrounds a p-type body layer contact region and an n-type source region in the indicated order in a plan view; a p-type body layer and an n-type JFET region; a trench that is formed on the body layer so as to span between the source region and the current diffusion region adjacent each other in a first direction and extends in the first direction; and a gate electrode embedded in the trench with a gate insulating film therebetween.

Abstract: An aromatic polycarbonate oligomer solid contains a repeating unit represented by formula (1) and a repeating unit represented by formula (2), has a weight average molecular weight of 500 to 10,000, low-molecular-weight components less than or equal to 5.0 area % measured with high-speed liquid chromatography, and a loose bulk density of greater than or equal to 0.25 g/cm3. wherein R1, R2, R3, and R4 are independently a hydrogen atom or an alkyl group with 1 to 4 carbon atoms, and R5 and R6 are independently a hydrogen atom or an alkyl group with 1 to 12 carbon atoms. The aromatic polycarbonate oligomer solid has a substantially reduced amount of low-molecular-weight components, no or a substantially reduced amount of chlorine-containing compounds, high loose bulk density, and ease of handling.

Abstract: The purpose of the present invention is to provide an aromatic polycarbonate oligomer solid with substantially reduced low-molecular-weight components, no or a substantially reduced amount of chlorine-containing compounds, high loose bulk density, and ease of handling. The aromatic polycarbonate oligomer solid contains a repeating unit represented by formula (1), has a weight average molecular weight of 500 to 10,000, low-molecular-weight components less than or equal to 5.0 area % measured with high-speed liquid chromatography, and a loose bulk density of greater than or equal to 0.

Abstract: The purpose of the present invention is to provide an aromatic polycarbonate oligomer solid with substantially reduced low-molecular-weight components, no or a substantially reduced amount of chlorine-containing compounds, high loose bulk density, and ease of handling. The aromatic polycarbonate oligomer solid contains a repeating unit represented by general formula (1), has a weight average molecular weight of 500 to 10000, low-molecular-weight components less than or equal to 5.0 area % measured with high-speed liquid chromatography, and a loose bulk density of greater than or equal to 0.30 g/cm3.

Abstract: A plurality of trench gate electrodes are formed from an upper surface to reach an intermediate depth of an n-type SiC epitaxial substrate including an n-type drain region on a lower surface and an n-type source region on an upper surface in contact with the source region to be arranged in a direction along the upper surface. Here, at least three side surfaces among four side surfaces of each of the trench gate electrodes having a rectangular planar shape are in contact with a p-type body layer below the source region. In addition, a JFET region in the SiC epitaxial substrate and a source electrode connected to the source region immediately above the JFET region extend along a direction in which the plurality of trench gate electrodes are arranged.

Abstract: Provided is a semiconductor device whose performance is improved. A p type body region is formed in an n type semiconductor layer containing silicon carbide, and a gate electrode is formed on the body region with a gate insulating film interposed therebetween. An n type source region is formed in the body region on a side surface side of the gate electrode, and the body region and a source region are electrically connected to a source electrode. A p type field relaxation layer FRL is formed in the semiconductor layer on the side surface side of the gate electrode, and the source electrode is electrically connected to the field relaxation layer FRL. The field relaxation layer FRL constitutes a part of the JFET 2Q which is a rectifying element, and a depth of the field relaxation layer FRL is shallower than a depth of the body region.

Abstract: The purpose of the present invention is to provide an aromatic polycarbonate oligomer solid with substantially reduced low-molecular-weight components, no or a substantially reduced amount of chlorine-containing compounds, high loose bulk density, and ease of handling. The aromatic polycarbonate oligomer solid contains a repeating unit represented by general formula (1), has a weight average molecular weight of 500 to 10000, low-molecular-weight components less than or equal to 5.0 area % measured with high-speed liquid chromatography, and a loose bulk density of greater than or equal to 0.30 g/cm3.

Abstract: A plurality of trench gate electrodes are formed from an upper surface to reach an intermediate depth of an n-type SiC epitaxial substrate including an n-type drain region on a lower surface and an n-type source region on an upper surface in contact with the source region to be arranged in a direction along the upper surface. Here, at least three side surfaces among four side surfaces of each of the trench gate electrodes having a rectangular planar shape are in contact with a p-type body layer below the source region. In addition, a JFET region in the SiC epitaxial substrate and a source electrode connected to the source region immediately above the JFET region extend along a direction in which the plurality of trench gate electrodes are arranged.

Abstract: A silicon carbide semiconductor device includes an n-type silicon carbide semiconductor substrate, a drain electrode electrically connected to a rear face, an n-type semiconductor layer having a second impurity concentration lower than the first impurity concentration, a p-type first semiconductor region, an n-type second semiconductor region, and an n-type third semiconductor region. A trench is formed having a gate electrode therein in which the bottom face of the trench contacts the p-type semiconductor region. A metal layer is electrically connected to the third semiconductor region, and a source electrode electrically connects the second semiconductor region and the metal layer to each other.

Abstract: The purpose of the present invention is to provide an aromatic polycarbonate oligomer solid which has a markedly reduced amount of a low molecular weight component, has no or a markedly reduced amount of chlorine-containing compounds, has a high loose bulk density and is easy to handle. The purpose is met by an aromatic polycarbonate oligomer solid which includes a repeating unit represented by general formula (1), has a weight average molecular weight of 500 to 10000, has a low molecular weight component of less than or equal to 5.0 area % as measured by high performance liquid chromatography, and has a loose bulk density of greater than or equal to 0.20 g/cm3.

Abstract: The purpose of the present invention is to provide an aromatic polycarbonate oligomer solid which has a markedly reduced low molecular weight component, has no or markedly reduced chlorine-containing compounds, has a high loose bulk density and is easy to handle. This purpose is met by an aromatic polycarbonate oligomer solid which includes a repeating unit represented by general formula (1), has a weight average molecular weight of 500-10000, has a low molecular weight component of less than or equal to 5.0 area % in high performance liquid chromatography measurement, and has a loose bulk density of greater than or equal to 0.21 g/cm3.

Abstract: The purpose of the present invention is to provide an aromatic polycarbonate oligomer solid which has a markedly reduced low molecular weight component, has no or markedly reduced chlorine-containing compounds, has a high loose bulk density and is easy to handle. This purpose is met by an aromatic polycarbonate oligomer solid which includes a repeating unit represented by general formula (1), has a weight average molecular weight of 500-10000, has a low molecular weight component of less than or equal to 5.0 area % in high performance liquid chromatography measurement, and has a loose bulk density of greater than or equal to 0.