Abstract: A semiconductor device comprising a package base whose material is glass epoxy or the like, a plurality of leads which are formed in a manner to extend from the front surface to the rear surface of the package base, a semiconductor element which is fastened to the package base and which is electrically connected to the leads, and a resin which seals, at least, the semiconductor element and electrical connection parts between the element and the leads.

Abstract: A semiconductor integrated amplifier having a p-channel type MISFET and an n-channel type MISFET which are integrated in a single semiconductor substrate, a load resistance connected between the drain regions of the MISFETs, a power source to which the MISFETs are connected in series, and a DC current blocking capacitor through which the gates of the MISFETs are connected to each other. The amplifier has a gate capacitance one terminal of which is constituted by a well formed in the substrate and connected to high voltage side of power supply, while the other electrode thereof is constituted by a gate electrode formed on the well and connected to the low voltage side of the power supply. Parasitic capacitance of the capacitor is considerably reduced to allow a wider range of frequency adjustment of the amplifier.