Abstract: Embodiments provide a transparent electrode having high stability, low sheet resistance, and high light transmissivity, a method for producing the transparent electrode, and an electronic device using the transparent electrode. A transparent electrode including a structure including a transparent base material, a metal grid, metal nanowire, and a neutral polythiophene mixture. The metal grid has an embedded portion embedded in the transparent base material and a protrusion portion protruding from the transparent base material, and the metal nanowire and the neutral polythiophene mixture are arranged in contact with the transparent base material or the protrusion portion.

Abstract: It is an object of the present invention to provide a transmission-blocking vaccine using an immunogenic protein which is specifically expressed in the oocyst stage of malaria parasites or a peptide fragment thereof, and an oral transmission-blocking vaccine capable of immunizing various animals involved in the malaria infectious cycle with such a vaccine. The present invention relates to a malaria transmission-blocking vaccine for oral administration containing an immunogenic protein derived from malaria parasite which is specifically expressed in the oocyst stage of malaria parasites or a peptide fragment thereof, and a method of blocking the transmission of malaria using the same.

Abstract: The present embodiments provide a semiconductor element comprising a first electrode, an active layer, a second electrode comprising a homogeneous metal layer, and further a barrier layer comprising a transparent metal oxide. The barrier layer is placed between the active layer and the second electrode. The present embodiments also provide a method for manufacturing said semiconductor element.

Abstract: A flight vehicle of an embodiment includes a wing, double-side generation type solar cells, and a light reflecting part. The wing has an outer shell member. The outer shell member has transmittance. The wing is formed by an outer shell member in a hollow shape. The solar cells are disposed on the upper surface of the wing. The light reflecting part is provided on an inner surface of the outer shell member.

Abstract: A solar battery module according to an embodiment has at least one solar battery panel, a flexible substrate and a package. A solar battery cell is formed in the at least one solar battery panel. The flexible substrate is directly or indirectly connected to the at least one solar battery panel. A bypass diode is mounted on the flexible substrate. The flexible substrate forms a bypass line of the at least one solar battery panel. The package accommodates the at least one solar battery panel. The flexible substrate has a base material and a wiring. The wiring is supported by the base material. The wiring has a flying lead and a terminal. The flying lead protrudes from the base material. The flying lead is connected to the at least one solar battery panel. The terminal is provided on an outward side of the package.

Abstract: A photoelectric conversion element according to an embodiment includes: a first electrode; a second electrode; and a photoelectric conversion layer that is in contact with the first electrode and the second electrode and includes an active layer containing a perovskite compound. The active layer gives an X-ray diffraction pattern having a first diffraction peak ascribed to the (004) plane of the perovskite compound and a second diffraction peak ascribed to the (220) plane of the perovskite compound. The ratio of the maximum intensity of the first diffraction peak to the maximum intensity of the second diffraction peak is 0.18 or more.

Abstract: A method for manufacturing a photoelectric conversion device, that includes: forming a laminate structure of a substrate, a transparent electrode, an active layer produced by wet-coating, and a counter electrode, stacked in this order; and thereafter forming a cavity by: (a) pressing an adhesive material just against a defect formed on the surface of said counter electrode, and then peeling off said adhesive material together with said defect and the peripheral part thereof; or (b) sucking a defect formed on the surface of said counter electrode, so as to remove said defect and the peripheral part thereof, where said cavity penetrates through the counter electrode and unreached to the transparent electrode.

Abstract: The present embodiments provide a flexible, lightweight and highly efficient photoelectric conversion device and further provide a manufacturing method thereof. The photoelectric conversion device according to the embodiment comprises a laminate structure of a substrate, an ITO electrode, a photoelectric conversion layer and a counter electrode. When subjected to surface X-ray diffraction analysis, the ITO electrode shows an X-ray diffraction profile characterized in that the peak at a diffraction peak position in the range of 2?=30.6±0.5° has a half-width of 1.0° or less. The ITO electrode in the device can be formed by forming an amorphous-phase ITO film on the substrate and then by subjecting the film to annealing treatment at a temperature of 200° or less.

Abstract: The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.

Abstract: According to one embodiment, a photoelectric conversion element includes a photoelectric conversion layer, a first layer and an intermediate layer. The photoelectric conversion layer includes a material having a perovskite structure. The first layer includes a first substance and a second substance. The intermediate layer is provided between the photoelectric conversion layer and the first layer. A concentration of the second substance in the first layer is lower than a concentration of the first substance in the first layer.

Abstract: A photoelectric conversion element according to an embodiment includes: a first electrode; a second electrode; and a photoelectric conversion layer that is in contact with the first electrode and the second electrode and includes an active layer containing a perovskite compound. The active layer gives an X-ray diffraction pattern having a first diffraction peak ascribed to the (004) plane of the perovskite compound and a second diffraction peak ascribed to the (220) plane of the perovskite compound. The ratio of the maximum intensity of the first diffraction peak to the maximum intensity of the second diffraction peak is 0.18 or more.

Abstract: A method for manufacturing a photoelectric conversion device, that includes: forming a laminate structure of a substrate, a transparent electrode, an active layer produced by wet-coating, and a counter electrode, stacked in this order; and thereafter forming a cavity by: (a) pressing an adhesive material just against a defect formed on the surface of said counter electrode, and then peeling off said adhesive material together with said defect and the peripheral part thereof; or (b) sucking a defect formed on the surface of said counter electrode, so as to remove said defect and the peripheral part thereof, where said cavity penetrates through the counter electrode and unreached to the transparent electrode.

Abstract: A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C.

Abstract: An solar cell of an embodiment includes a first electrode, an electron transport layer containing a metal oxide, a self-assembled monolayer, a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and a second electrode. The self-assembled monolayer includes a fullerene-containing compound having a fullerene portion including a fullerene or a fullerene derivative, an absorption group to the metal oxide, and a bond group bonding the fullerene portion and the absorption group. The bond group contains a bivalent aromatic hydrocarbon group and a bivalent organic group which includes a carbon atom chain having 1 to 18 single-bonded carbon(s) or an atom chain in which a part of the carbon atom chain is substituted by at least one element selected from oxygen, nitrogen, and sulfur, as a main chain.

Abstract: A photoelectric conversion device includes: an element substrate having a first electrode, a photoelectric conversion layer, and a second electrode, the photoelectric conversion layer being provided above the first electrode and performing charge separation by energy of irradiated light, and the second electrode being provided above the photoelectric conversion layer; a counter substrate facing the element substrate; and a sealing layer provided between the element substrate and the counter substrate. The element substrate, the counter substrate, and the sealing layer define a sealing region sealing the photoelectric conversion layer. The element substrate further has: an impurity detection layer in contact with the second electrode inside the sealing region and causing chemical reaction with an impurity containing at least one of oxygen and water; and a third electrode in contact with the impurity detection layer and extending to the outside of the sealing region.

Abstract: The present embodiments provide a highly durable semiconductor element capable of generating electricity or emitting light with high efficiency, and further provide a manufacturing method thereof. The semiconductor element according to the embodiment comprises a first electrode, a second electrode, an active layer and a substrate, and is characterized in that the active layer contains crystals oriented anisotropically. For manufacturing the element, the active layer is produced by the steps of: applying a coating solution containing precursor compounds of the active layer and an organic solvent capable of dissolving the precursor compounds, to form a coating film; and then growing the crystals in a specific direction parallel to the surface of the coating film.

Abstract: In one embodiment, a polymer includes a recurring unit containing a bivalent group expressed by a formula (1) shown below. A weight-average molecular weight of the polymer is in a range of 3000 or more to 1000000 or less. R1 is a monovalent group selected from hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkanoyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted heteroaryl group. X is an atom selected from oxygen, sulfur, and selenium. Y and Z are each independently a bivalent group selected from a carbonyl group, a sulfinyl group, and a sulfonyl group. A case where Y and Z are both the carbonyl groups is excluded.

Abstract: According to one embodiment, a photoelectric conversion element includes a photoelectric conversion layer, a first electrode, and a first layer. The photoelectric conversion layer includes a material having a perovskite structure. The first electrode includes polyethylene dioxythiophene. The first layer is provided between the photoelectric conversion layer and the first electrode. The first layer has hole transport properties. The hygroscopicity of the first layer is lower than a hygroscopicity of the photoelectric conversion layer.

Abstract: A photoelectric conversion device of an embodiment includes, in sequence: a substrate; a first electrode; a photoelectric conversion layer containing a perovskite compound and a solvent; and a second electrode. The perovskite compound has a composition represented by a composition formula of ABX3. The A represents at least one selected from a monovalent cation of a metal element and a monovalent cation of an amine compound. The B represents a bivalent cation of a metal element. The X represents a monovalent anion of a halogen element. The number of molecules of the solvent with respect to one crystal lattice of the perovskite compound ranges from 0.004 to 0.5.

Abstract: The present embodiments provide a photoelectric conversion device having a laminate structure of a substrate, a transparent electrode, an active layer, and a counter electrode, stacked in this order. In the device, a cavity is provided on the counter electrode-side. The cavity penetrates through the counter electrode and has an opening area larger in the counter electrode than in the active layer.