Abstract: A method of producing a phthaloyl dichloride compound, the method including: providing a compound represented by the following formula (1) and a compound represented by the following formula (2); and bringing the compound represented by the following formula (1) and the compound represented by the following formula (2) into reaction, so as to form a compound represented by the following formula (3), in the presence of at least one compound selected from a zirconium compound, a hafnium compound, and zinc oxide; wherein, in formulae, X represents a hydrogen atom, a halogen atom, a nitro group, a methyl group, or a methoxy group; when the X is plural, Xs may be the same or different from each other; n represents an integer of from 0 to 2; R represents a halogen atom, a chlorocarbonyl group, a low carbon number alkyl group, or a halogen-substituted low carbon number alkyl group; when the R is plural, Rs may be the same or different from each other; and m represents an integer of from 0 to 2.

Abstract: A method of producing a phthaloyl dichloride compound, the method including: providing a compound represented by the following formula (1) and a compound represented by the following formula (2); and bringing the compound represented by the following formula (1) and the compound represented by the following formula (2) into reaction, so as to form a compound represented by the following formula (3), in the presence of at least one compound selected from a zirconium compound, a hafnium compound, and zinc oxide; wherein, in formulae, X represents a hydrogen atom, a halogen atom, a nitro group, a methyl group, or a methoxy group; when the X is plural, Xs may be the same or different from each other; n represents an integer of from 0 to 2; R represents a halogen atom, a chlorocarbonyl group, a low carbon number alkyl group, or a halogen-substituted low carbon number alkyl group; when the R is plural, Rs may be the same or different from each other; and m represents an integer of from 0 to 2.

Abstract: A method of producing a phthaloyl dichloride compound, the method including: providing a compound represented by the following formula (1) and a compound represented by the following formula (2); and bringing the compound represented by the following formula (1) and the compound represented by the following formula (2) into reaction, so as to form a compound represented by the following formula (3), in the presence of at least one compound selected from a zirconium compound, a hafnium compound, and zinc oxide; wherein, in formulae, X represents a hydrogen atom, a halogen atom, a nitro group, a methyl group, or a methoxy group; when the X is plural, Xs may be the same or different from each other; n represents an integer of from 0 to 2; R represents a halogen atom, a chlorocarbonyl group, a low carbon number alkyl group, or a halogen-substituted low carbon number alkyl group; when the R is plural, Rs may be the same or different from each other; and m represents an integer of from 0 to 2.

Abstract: An arrangement, for receiving an electronic component capable of high power operation, comprising: an organic substrate comprising an upper surface, a lower surface and an aperture extending through the organic substrate between the upper surface and the lower surface; and a conductor, located within the aperture of the organic substrate, having a width and a depth, for coupling to the electronic component and for transferring thermal energy from the electronic component through the organic substrate, wherein the width of the conductor is greater than the depth of the conductor.

Abstract: This invention provides a method for forming a three dimensional integrated circuit stacked structure (5), as well as a stacked structure formed in accordance with the method. The method includes placing a first integrated (1) circuit atop a second integrated circuit (2), and electrically connecting the first and the second integrated circuits at connection points (20). At least some of the connection points correspond to electrically conductive through-hole structures (12) made through a silicon substrate (14) of the first integrated circuit. The first one of the integrated circuits contains circuitry operating at frequencies equal to or greater than about 1 GHz, and the silicon substrate has a resistivity of at least about 100 ohms-cm. The result is that the electrical performance is not degraded, as the RF signal insertion loss at the through-hole interconnections is significantly reduced.

Abstract: This invention provides a method for forming a three dimensional integrated circuit stacked structure (5), as well as a stacked structure formed in accordance with the method. The method includes placing a first integrated (1) circuit atop a second integrated circuit (2), and electrically connecting the first and the second integrated circuits at connection points (20). At least some of the connection points correspond to electrically conductive through-hole structures (12) made through a silicon substrate (14) of the first integrated circuit. The first one of the integrated circuits contains circuitry operating at frequencies equal to or greater than about 1 GHz, and the silicon substrate has a resistivity of at least about 100 ohms-cm. The result is that the electrical performance is not degraded, as the RF signal insertion loss at the through-hole interconnections is significantly reduced.

Abstract: A method of transmitting and receiving an electronic mail includes the steps of: transmitting the electronic mail from a sender terminal to a receiver terminal, and receiving the electronic mail at the receiver terminal. The transmitting step includes the steps of producing the electronic mail including character codes of characters constituting a mail document, at least one conversion program for converting the characters to be displayed in a dynamic manner and an address of the receiver terminal, and transmitting the electronic mail.

Abstract: Disclosed is an ultra high frequency radio communication apparatus having: a receiver antenna; a transmitter antenna; an IC chip being electrically connected to the receiver antenna and the transmitter antenna; a substrate on which the receiver antenna, the transmitter antenna and the IC chip are mounted; an input terminal for inputting to the IC chip a base band input signal; an output terminal for outputting a base band output signal from the IC chip; and a control signal terminal for inputting a control signal for controlling the IC chip to the IC chip. The IC chip is placed in a shielding space such that the cut-off frequency of the shielding space is higher than the frequency of a carrier signal for radio communication.

Abstract: A wiring board for high-frequency signals, which comprises, a substrate, a dielectric layer formed on the substrate and provided on its surface with a U-shaped groove having an arcuate bottom for forming a wiring therein, and a signal wiring formed in the U-shaped groove, which is featured in that an upper end portion of the signal wiring is protruded out of the surface of the dielectric layer. A distance (H) from a protruded top surface of the signal wiring to a bottom of the U-shaped groove and a width (W) of the U-shaped groove preferably meet a relationship of 2<(W/H)<50, and the height of the portion of signal wiring which is protruded out of the surface of the dielectric layer is preferably in the range of 10 nm to 10 .mu.m.