Patents by Inventor Takeshi HAZAMA

Takeshi HAZAMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210023818
    Abstract: A radio wave absorbing material including a fluoropolymer. The fluoropolymer contains a vinylidene fluoride unit, and the radio wave absorbing material absorbs a radio wave having a frequency in a range of 1 MHz to 100 MHz.
    Type: Application
    Filed: March 26, 2019
    Publication date: January 28, 2021
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Takeshi HAZAMA, Nobuyuki KOMATSU, Kouji YOKOTANI, Mayuko TATEMICHI, Akio HIGAKI, Tomohiro TANAKA
  • Publication number: 20200362127
    Abstract: A film having a dielectric dissipation factor at a frequency of 1 kHz and 160° C. of 0.02% or lower and a dielectric breakdown strength at 160° C. of 400 V/?m or higher. Also disclosed is a film including at least one fluoropolymer selected from a tetrafluoroethylene/perfluoro(alkyl vinyl ether) copolymer and a tetrafluoroethylene/hexafluoropropylene copolymer, the fluoropolymer having a crystallinity of 65% or higher.
    Type: Application
    Filed: October 29, 2018
    Publication date: November 19, 2020
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Mayuko TATEMICHI, Takeshi HAZAMA, Nobuyuki KOMATSU, Tatsuya HIGUCHI, Kouji YOKOTANI, Akio HIGAKI, Tomohiro TANAKA
  • Patent number: 10745531
    Abstract: The present invention provides a film having excellent heat resistance and a small difference between the permittivity at low temperatures and the permittivity at high temperatures. The present invention provides a film having a relative permittivity of 8 or more at a frequency of 1 kHz at 30° C., wherein the rate of change is ?8 to +8% as calculated from a relative permittivity A at a frequency of 1 kHz at 30° C. and a relative permittivity B at a frequency of 1 kHz at 150° C. according to the following formula: Rate of change(%)=(B?A)/A×100.
    Type: Grant
    Filed: July 13, 2016
    Date of Patent: August 18, 2020
    Assignee: DAIKIN INDUSTRIES, LTD.
    Inventors: Takashi Kanemura, Eri Mukai, Takeshi Hazama, Tetsuhiro Kodani, Nobuyuki Komatsu, Hisako Nakamura, Kouji Yokotani, Mayuko Tatemichi, Akio Higaki
  • Publication number: 20200032014
    Abstract: The invention provides a film having a high relative permittivity, a high volume resistivity, and a high breakdown strength. The film has a relative permittivity of 9 or higher at a frequency of 1 kHz and 30° C., a volume resistivity of 5E+15 ?·cm or higher at 30° C., and a breakdown strength of 500 V/?m or higher.
    Type: Application
    Filed: September 27, 2017
    Publication date: January 30, 2020
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Takeshi HAZAMA, Nobuyuki KOMATSU, Kouji YOKOTANI, Mayuko TATEMICHI, Tatsuya HIGUCHI, Keiko KOGA
  • Publication number: 20190382544
    Abstract: A fluororesin film containing a fluororesin. The fluororesin film has on at least one surface thereof a ten-point average roughness of 0.100 to 1.200 ?m and an arithmetic average roughness of 0.010 to 0.050 ?m. Further, the fluororesin film has a breakdown strength of 400 V/?m or higher.
    Type: Application
    Filed: January 17, 2018
    Publication date: December 19, 2019
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Kouji YOKOTANI, Nobuyuki KOMATSU, Takeshi HAZAMA, Mayuko TATEMICHI, Akio HIGAKI, Tatsuya HIGUCHI, Keiko YAMAZAKI
  • Publication number: 20180223059
    Abstract: The present invention provides a film having excellent heat resistance and a small difference between the permittivity at low temperatures and the permittivity at high temperatures. The present invention provides a film having a relative permittivity of 8 or more at a frequency of 1 kHz at 30° C., wherein the rate of change is ?8 to +8% as calculated from a relative permittivity A at a frequency of 1 kHz at 30° C. and a relative permittivity B at a frequency of 1 kHz at 150° C. according to the following formula: Rate of change (%)=(B?A)/A×100.
    Type: Application
    Filed: July 13, 2016
    Publication date: August 9, 2018
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Takashi KANEMURA, Eri MUKAI, Takeshi HAZAMA, Tetsuhiro KODANI, Nobuyuki KOMATSU, Hisako NAKAMURA, Kouji YOKOTANI, Mayuko TATEMICHI, Akio HIGAKI
  • Publication number: 20150368413
    Abstract: The present invention aims to provide a film having a high dielectric constant and a low dissipation factor. The high dielectric film of the present invention includes a vinylidene fluoride/tetrafluoroethylene copolymer (A) with a mole ratio (vinylidene fluoride)/(tetrafluoroethylene) of 95/5 to 80/20. The film includes an ?-crystal structure and a ?-crystal structure. The ratio of the ?-crystal structure is 50% or more.
    Type: Application
    Filed: October 16, 2013
    Publication date: December 24, 2015
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Mayuko TATEMICHI, Miharu OTA, Kouji YOKOTANI, Nobuyuki KOMATSU, Hisako NAKAMURA, Fumiko SHIGENAI, Takeshi HAZAMA, Masakazu KINOSHITA, Meiten KOH, Takuji ISHIKAWA, Takashi IGUCHI, Kazunobu UCHIDA, Tomoyuki FUKATANI, Takahiro KITAHARA, Tetsuhiro KODANI
  • Publication number: 20150332855
    Abstract: The present invention aims to provide a multilayer film which can increase the capacitance. The present invention relates to a multilayer film including a first electrode layer, a resin substrate, a second electrode layer, and a dielectric layer stacked in the order set forth. The dielectric layer includes a vinylidene fluoride/tetrafluoroethylene copolymer (A). The copolymer (A) satisfies a mole ratio (vinylidene fluoride)/(tetrafluoroethylene) of 97/3 to 60/40.
    Type: Application
    Filed: November 14, 2013
    Publication date: November 19, 2015
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Meiten KOH, Nobuyuki KOMATSU, Takeshi HAZAMA, Hisako NAKAMURA, Kouji YOKOTANI, Miharu OTA, Fumiko SHIGENAI, Mayuko TATEMICHI, Masakazu KINOSHITA