Abstract: A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.

Abstract: A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.

Abstract: A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.

Abstract: A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Abstract: A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.

Abstract: Disclosed is a micro mixer which includes a mixing plate (14) with a first channel-forming section and a second channel-forming section. The first channel-forming section has a first channel formed for a first fluid to flow therethrough, while the second channel-forming section has a second channel formed for a second fluid to flow therethrough. Between the first channel-forming section and the second channel-forming section, there is provided a combined channel in which the first fluid and the second fluid merge with each other. The outlet of the first channel and the outlet of the second channel are opposed to each other with the combined channel disposed therebetween. The position of the outlet of the first channel facing the center axis of the combined channel is included in or the same as the position of the outlet of the second channel facing the center axis.

Abstract: A semiconductor device according to the present embodiment includes a semiconductor substrate. A lower-layer wiring is provided above a surface of the semiconductor substrate. An interlayer dielectric film is provided on the lower-layer wiring and includes a four-layer stacked structure. A contact plug contains aluminum. The contact plug is filled in a contact hole formed in the interlayer dielectric film in such a manner that the contact plug reaches the lower-layer wiring. Two upper layers and two lower layers in the stacked structure respectively have tapers on an inner surface of the contact hole. The taper of two upper layers and the taper of two lower layers have different angles from each other.

Abstract: The invention provides a process for continuously producing a urethane (meth)acrylate, containing causing a mixed liquid of a compound (A) having a hydroxyl group and a (meth) acryloyl group and a compound (B) having an isocyanate group to pass continuously and densely through a tubular microchannel formed in a heat-conducting reaction device, and reacting the hydroxyl group of the compound (A) with the isocyanate group of the compound (B).

Abstract: A semiconductor device according to the present embodiment includes a semiconductor substrate. A lower-layer wiring is provided above a surface of the semiconductor substrate. An interlayer dielectric film is provided on the lower-layer wiring and includes a four-layer stacked structure. A contact plug contains aluminum. The contact plug is filled in a contact hole formed in the interlayer dielectric film in such a manner that the contact plug reaches the lower-layer wiring. Two upper layers and two lower layers in the stacked structure respectively have tapers on an inner surface of the contact hole. The taper of two upper layers and the taper of two lower layers have different angles from each other.

Abstract: A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Abstract: A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Abstract: Disclosed is a micro mixer which includes a mixing plate (14) with a first channel-forming section and a second channel-forming section. The first channel-forming section has a first channel formed for a first fluid to flow therethrough, while the second channel-forming section has a second channel formed for a second fluid to flow therethrough. Between the first channel-forming section and the second channel-forming section, there is provided a combined channel in which the first fluid and the second fluid merge with each other. The outlet of the first channel and the outlet of the second channel are opposed to each other with the combined channel disposed therebetween. The position of the outlet of the first channel facing the center axis of the combined channel is included in or the same as the position of the outlet of the second channel facing the center axis.

Abstract: A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Abstract: An object of the present invention is to provide a process for producing a urethane (meth)acrylate safely with good productivity, and for achieving the object, the invention provides a process for continuously producing a urethane (meth)acrylate, containing causing a mixed liquid of a compound (A) having a hydroxyl group and a (meth)acryloyl group and a compound (B) having an isocyanate group to pass continuously and densely through a tubular microchannel formed in a heat-conducting reaction device, and reacting the hydroxyl group of the compound (A) with the isocyanate group of the compound (B), in which the tubular microchannel in the reaction device has a space size making a fluid cross-sectional area, through which the mixed liquid passes densely, of from 0.1 to 4.0 mm2, and the process contains heating the heat-conducting reaction device to a temperature of from 100 to 250° C.

Abstract: An object of the present invention is to provide a process for producing a urethane (meth)acrylate safely with good productivity, and for achieving the object, the invention provides a process for continuously producing a urethane (meth)acrylate, containing causing a mixed liquid of a compound (A) having a hydroxyl group and a (meth)acryloyl group and a compound (B) having an isocyanate group to pass continuously and densely through a tubular microchannel formed in a heat-conducting reaction device, and reacting the hydroxyl group of the compound (A) with the isocyanate group of the compound (B), in which the tubular microchannel in the reaction device has a space size making a fluid cross-sectional area, through which the mixed liquid passes densely, of from 0.1 to 4.0 mm2, and the process contains heating the heat-conducting reaction device to a temperature of from 100 to 250° C.

Abstract: An object of the present invention is to provide a process for producing an epoxy (meth)acrylate safely with good productivity, and the invention provides a process for continuously producing an epoxy (meth)acrylate, containing causing a mixed liquid of a compound (A) having a carboxyl group and a (meth)acryloyl group and a compound (B) having an epoxy group to pass continuously and densely through a tubular microchannel formed in a heat-conducting reaction device, and reacting the carboxyl group of the compound (A) with the epoxy group of the compound (B), in which the tubular microchannel in the reaction device has a space size making a fluid cross-sectional area, through which the mixed liquid passes densely, of from 0.1 to 4.0 mm2, and the process contains heating the heat-conducting reaction device to a temperature of from 150 to 260° C., reacting the mixed liquid to provide a Reynolds number of a reaction liquid passing through the tubular microchannel in a range of from 0.

Abstract: A sensitivity of a cumulative chemical/physical phenomenon detecting apparatus is improved. Prior to transferring charges at a sensing section to a floating diffusion section, the charges remaining at the sensing section are removed from the sensing section by a potential barrier formed between the sensing section and a charge injection adjusting section.

Abstract: A sensitivity of a cumulative chemical/physical phenomenon detecting apparatus is improved. Prior to transferring charges at a sensing section to a floating diffusion section, the charges remaining at the sensing section are removed from the sensing section by a potential barrier formed between the sensing section and a charge injection adjusting section.