Patents by Inventor Takeshi Hoshi

Takeshi Hoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12165858
    Abstract: According to one embodiment, a thermionic power generation element includes a cathode, an anode, and an insulating member. The cathode includes an electrically-conductive material. The anode includes an electrically-conductive material. The insulating member is located between the cathode and the anode. The cathode and the anode have a gap between the cathode and the anode. A first through-hole is provided in the anode. The first through-hole extends through the anode in a first direction and communicates with the gap. The first direction is from the cathode toward the anode.
    Type: Grant
    Filed: February 22, 2022
    Date of Patent: December 10, 2024
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
    Inventors: Shigeya Kimura, Masaya Yamamitsu, Hisao Miyazaki, Hisashi Yoshida, Hiroshi Tomita, Souichi Ueno, Takeshi Hoshi, Tomoya Takeda
  • Patent number: 11855579
    Abstract: According to one embodiment, a power generation element includes a first conductive region including a first surface, a plurality of second conductive regions, and a plurality of insulating structure regions. The second conductive regions are arranged along the first surface. A gap is provided between the second conductive regions and the first surface. One of the structure regions is provided between one of the second conductive regions and the first surface. An other one of the structure regions is provided between an other one of the second conductive regions and the first surface.
    Type: Grant
    Filed: August 11, 2021
    Date of Patent: December 26, 2023
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
    Inventors: Shigeya Kimura, Hisashi Yoshida, Hisao Miyazaki, Hiroshi Tomita, Souichi Ueno, Takeshi Hoshi, Tatsuo Shimizu
  • Patent number: 11805698
    Abstract: According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.
    Type: Grant
    Filed: August 17, 2021
    Date of Patent: October 31, 2023
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Energy Systems & Solutions Corporation
    Inventors: Hisashi Yoshida, Hisao Miyazaki, Shigeya Kimura, Hiroshi Tomita, Souichi Ueno, Takeshi Hoshi
  • Patent number: 11664182
    Abstract: According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes Alx1Ga1-x1N (0<x1?1) including a third element including at least one selected from the group consisting of Si, Ge, Te and Sn. A +c-axis direction of the third region includes a component in a direction from the first region toward the second region.
    Type: Grant
    Filed: August 13, 2021
    Date of Patent: May 30, 2023
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Energy Systems & Solutions Corporation
    Inventors: Shigeya Kimura, Hisashi Yoshida, Hisao Miyazaki, Hiroshi Tomita, Souichi Ueno, Takeshi Hoshi
  • Publication number: 20230066425
    Abstract: According to one embodiment, a thermionic power generation element includes a cathode, an anode, and an insulating member. The cathode includes an electrically-conductive material. The anode includes an electrically-conductive material. The insulating member is located between the cathode and the anode. The cathode and the anode have a gap between the cathode and the anode. A first through-hole is provided in the anode. The first through-hole extends through the anode in a first direction and communicates with the gap. The first direction is from the cathode toward the anode.
    Type: Application
    Filed: February 22, 2022
    Publication date: March 2, 2023
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
    Inventors: Shigeya KIMURA, Masaya YAMAMITSU, Hisao MIYAZAKI, Hisashi YOSHIDA, Hiroshi TOMITA, Souichi UENO, Takeshi HOSHI, Tomoya TAKEDA
  • Publication number: 20220166369
    Abstract: According to one embodiment, a power generation element includes a first conductive region including a first surface, a plurality of second conductive regions, and a plurality of insulating structure regions. The second conductive regions are arranged along the first surface. A gap is provided between the second conductive regions and the first surface. One of the structure regions is provided between one of the second conductive regions and the first surface. An other one of the structure regions is provided between an other one of the second conductive regions and the first surface.
    Type: Application
    Filed: August 11, 2021
    Publication date: May 26, 2022
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
    Inventors: Shigeya KIMURA, Hisashi YOSHIDA, Hisao MIYAZAKI, Hiroshi TOMITA, Souichi UENO, Takeshi HOSHI, Tatsuo SHIMIZU
  • Publication number: 20220149257
    Abstract: According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.
    Type: Application
    Filed: August 17, 2021
    Publication date: May 12, 2022
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
    Inventors: Hisashi YOSHIDA, Hisao MIYAZAKI, Shigeya KIMURA, Hiroshi TOMITA, Souichi UENO, Takeshi HOSHI
  • Publication number: 20220139660
    Abstract: According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes Alx1Ga1-x1N (0<x1?1) including a third element including at least one selected from the group consisting of Si, Ge, Te and Sn. A +c-axis direction of the third region includes a component in a direction from the first region toward the second region.
    Type: Application
    Filed: August 13, 2021
    Publication date: May 5, 2022
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
    Inventors: Shigeya KIMURA, Hisashi YOSHIDA, Hisao MIYAZAKI, Hiroshi TOMITA, Souichi UENO, Takeshi HOSHI
  • Patent number: 10718741
    Abstract: An ultrasonic flaw detecting apparatus comprises an array prove, an element-group defining circuit, a calculator, a signal receiver and a generator. The array probe comprises a plurality of piezoelectric elements, each of the plurality of piezoelectric elements being configured to transmit and receive an ultrasonic wave to and from an inspection object. The element-group defining circuit is configured to select, as an element group, plural consecutive piezoelectric elements from the plurality of piezoelectric elements, set a reference position of the element group based on array arrangement information of the plurality of piezoelectric elements in the element group and based on a weighting value of each of the plurality of piezoelectric elements in the element group, and calculate a propagation path of an ultrasonic beam from the element group based on the reference position and a predetermined refraction angle.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: July 21, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, Toshiba Energy Systems & Solutions Corporation
    Inventors: Setsu Yamamoto, Azusa Sugawara, Jun Semboshi, Kentaro Tsuchihashi, Takeshi Hoshi, Masaru Otsuka
  • Publication number: 20190170701
    Abstract: An ultrasonic flaw detecting apparatus comprises an array prove, an element-group defining circuit, a calculator, a signal receiver and a generator. The array probe comprises a plurality of piezoelectric elements, each of the plurality of piezoelectric elements being configured to transmit and receive an ultrasonic wave to and from an inspection object. The element-group defining circuit is configured to select, as an element group, plural consecutive piezoelectric elements from the plurality of piezoelectric elements, set a reference position of the element group based on array arrangement information of the plurality of piezoelectric elements in the element group and based on a weighting value of each of the plurality of piezoelectric elements in the element group, and calculate a propagation path of an ultrasonic beam from the element group based on the reference position and a predetermined refraction angle.
    Type: Application
    Filed: March 23, 2018
    Publication date: June 6, 2019
    Applicants: KABUSHIKI KAISHA TOSHIBA, Toshiba Energy Systems & Solutions Corporation
    Inventors: Setsu YAMAMOTO, Azusa SUGAWARA, Jun SEMBOSHI, Kentaro TSUCHIHASHI, Takeshi HOSHI, Masaru OTSUKA
  • Patent number: 9217731
    Abstract: A welding inspection method has steps of: generating transmission laser light for generating an ultrasonic wave and transmitting the transmission laser light to an object to be inspected during or after welding operation for irradiation; generating reception laser light for detecting an ultrasonic wave and transmitting the reception laser light to the object to be inspected for irradiation; collecting laser light scattered and reflected at surface of the object to be inspected; performing interference measurement of the laser light and obtaining an ultrasonic signal; and analyzing the ultrasonic signal obtained by the interference measurement. At least one of the transmission laser light generated in the transmission laser light irradiation step and the reception laser light generated in the reception laser light irradiation step is irradiated onto a welded metal part or a groove side surface.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: December 22, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Setsu Yamamoto, Takahiro Miura, Takeshi Hoshi, Tsuyoshi Ogawa, Yoshihiro Fujita, Shozo Hirano, Kazumi Watanabe, Satoshi Nagai, Masahiro Yoshida, Satoru Asai, Makoto Ochiai, Jun Semboshi
  • Publication number: 20130160551
    Abstract: According to an embodiment, an ultrasonic flaw detection device is provided with: an ultrasonic probe, which applies ultrasonic waves, by driving a plurality of ultrasonic elements, to a test object to be inspected, and which receives reflected ultrasonic waves from the test object; and an analysis unit, which analyzes the signals of the reflected ultrasonic waves received by the ultrasonic probe, and which calculates the flaw detection results. The analysis unit calculates the flaw detection results using an ultrasonic wave propagation path obtained on the basis of the surface information of the test object having the ultrasonic waves applied thereto, thereby obtaining highly accurate detection results even the surface of the test object is formed in complex shape.
    Type: Application
    Filed: December 21, 2012
    Publication date: June 27, 2013
    Inventors: Takahiro MIURA, Setsu YAMAMOTO, Makoto OCHIAI, Takeshi HOSHI, Kazumi WATANABE, Satoshi NAGAI, Masahiro YOSHIDA, Hiroyuki ADACHI, Tadahiro MITSUHASHI, Satoshi YAMAMOTO
  • Patent number: 8329553
    Abstract: A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed.
    Type: Grant
    Filed: March 23, 2010
    Date of Patent: December 11, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shogo Matsuo, Takeshi Hoshi, Keisuke Nakazawa, Kazuaki Iwasawa
  • Publication number: 20120034754
    Abstract: A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.
    Type: Application
    Filed: October 13, 2011
    Publication date: February 9, 2012
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kazuaki Iwasawa, Takeshi Hoshi, Keisuke Nakazawa, Shogo Matsuo, Takashi Nakao, Ryu Kato, Tetsuya Kai, Katsuyuki Sekine
  • Patent number: 8080463
    Abstract: A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.
    Type: Grant
    Filed: January 21, 2010
    Date of Patent: December 20, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuaki Iwasawa, Takeshi Hoshi, Keisuke Nakazawa, Shogo Matsuo, Takashi Nakao, Ryu Kato, Tetsuya Kai, Katsuyuki Sekine
  • Publication number: 20110284508
    Abstract: A welding system has: a welding mechanism, a reception laser light source, a reception optical mechanism, an interferometer, a data recording/analysis mechanism and a data recording/analysis mechanism. The reception laser light source generates reception laser light so as to irradiate the object to be welded with the reception laser light for the purpose of detecting a reflected ultrasonic wave obtained as a result of reflection of a transmission ultrasonic wave. The reception optical mechanism transmits, during or after welding operation, the reception laser light generated from the reception laser light source to the surface of the object to be welded for irradiation while moving, together with the welding mechanism, relative to the object to be welded and collects laser light scattered/reflected at the surface of the object to be welded.
    Type: Application
    Filed: May 19, 2011
    Publication date: November 24, 2011
    Inventors: Takahiro Miura, Setsu Yamamoto, Takeshi Hoshi, Tsuyoshi Ogawa, Yoshihiro Fujita, Shozo Hirano, Kazumi Watanabe, Satoshi Nagai, Masahiro Yoshida, Jun Semboshi, Satoru Asai, Makoto Ochiai
  • Publication number: 20110286005
    Abstract: A welding inspection method has steps of: generating transmission laser light for generating an ultrasonic wave and transmitting the transmission laser light to an object to be inspected during or after welding operation for irradiation; generating reception laser light for detecting an ultrasonic wave and transmitting the reception laser light to the object to be inspected for irradiation; collecting laser light scattered and reflected at surface of the object to be inspected; performing interference measurement of the laser light and obtaining an ultrasonic signal; and analyzing the ultrasonic signal obtained by the interference measurement. At least one of the transmission laser light generated in the transmission laser light irradiation step and the reception laser light generated in the reception laser light irradiation step is irradiated onto a welded metal part or a groove side surface.
    Type: Application
    Filed: May 19, 2011
    Publication date: November 24, 2011
    Inventors: Setsu YAMAMOTO, Takahiro Miura, Takeshi Hoshi, Tsuyoshi Ogawa, Yoshihiro Fujita, Shozo Hirano, Kazumi Watanabe, Satoshi Nagai, Masahiro Yoshida, Satoru Asai, Makoto Ochiai, Jun Semboshi
  • Publication number: 20100311220
    Abstract: A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed.
    Type: Application
    Filed: March 23, 2010
    Publication date: December 9, 2010
    Inventors: Shogo MATSUO, Takeshi Hoshi, Keisuke Nakazawa, Kazuaki Iwasawa
  • Publication number: 20100190317
    Abstract: A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.
    Type: Application
    Filed: January 21, 2010
    Publication date: July 29, 2010
    Inventors: Kazuaki IWASAWA, Takeshi Hoshi, Keisuke Nakazawa, Shogo Matsuo, Takashi Nakao, Ryu Kato, Tetsuya Kai, Katsuyuki Sekine
  • Patent number: 7682927
    Abstract: A method for manufacturing a semiconductor device includes coating a solution containing a perhydrosilazane polymer on a substrate, heating the solution to form a film containing the perhydrosilazane polymer, and oxidizing the film in a water vapor atmosphere at a reduced pressure to convert the film into an insulating film containing silicon and oxygen.
    Type: Grant
    Filed: March 24, 2006
    Date of Patent: March 23, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takeshi Hoshi, Masahiro Kiyotoshi, Atsuko Kawasaki