Patents by Inventor Takeshi Hoshi
Takeshi Hoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12165858Abstract: According to one embodiment, a thermionic power generation element includes a cathode, an anode, and an insulating member. The cathode includes an electrically-conductive material. The anode includes an electrically-conductive material. The insulating member is located between the cathode and the anode. The cathode and the anode have a gap between the cathode and the anode. A first through-hole is provided in the anode. The first through-hole extends through the anode in a first direction and communicates with the gap. The first direction is from the cathode toward the anode.Type: GrantFiled: February 22, 2022Date of Patent: December 10, 2024Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATIONInventors: Shigeya Kimura, Masaya Yamamitsu, Hisao Miyazaki, Hisashi Yoshida, Hiroshi Tomita, Souichi Ueno, Takeshi Hoshi, Tomoya Takeda
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Patent number: 11855579Abstract: According to one embodiment, a power generation element includes a first conductive region including a first surface, a plurality of second conductive regions, and a plurality of insulating structure regions. The second conductive regions are arranged along the first surface. A gap is provided between the second conductive regions and the first surface. One of the structure regions is provided between one of the second conductive regions and the first surface. An other one of the structure regions is provided between an other one of the second conductive regions and the first surface.Type: GrantFiled: August 11, 2021Date of Patent: December 26, 2023Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATIONInventors: Shigeya Kimura, Hisashi Yoshida, Hisao Miyazaki, Hiroshi Tomita, Souichi Ueno, Takeshi Hoshi, Tatsuo Shimizu
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Patent number: 11805698Abstract: According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.Type: GrantFiled: August 17, 2021Date of Patent: October 31, 2023Assignees: Kabushiki Kaisha Toshiba, Toshiba Energy Systems & Solutions CorporationInventors: Hisashi Yoshida, Hisao Miyazaki, Shigeya Kimura, Hiroshi Tomita, Souichi Ueno, Takeshi Hoshi
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Patent number: 11664182Abstract: According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes Alx1Ga1-x1N (0<x1?1) including a third element including at least one selected from the group consisting of Si, Ge, Te and Sn. A +c-axis direction of the third region includes a component in a direction from the first region toward the second region.Type: GrantFiled: August 13, 2021Date of Patent: May 30, 2023Assignees: Kabushiki Kaisha Toshiba, Toshiba Energy Systems & Solutions CorporationInventors: Shigeya Kimura, Hisashi Yoshida, Hisao Miyazaki, Hiroshi Tomita, Souichi Ueno, Takeshi Hoshi
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Publication number: 20230066425Abstract: According to one embodiment, a thermionic power generation element includes a cathode, an anode, and an insulating member. The cathode includes an electrically-conductive material. The anode includes an electrically-conductive material. The insulating member is located between the cathode and the anode. The cathode and the anode have a gap between the cathode and the anode. A first through-hole is provided in the anode. The first through-hole extends through the anode in a first direction and communicates with the gap. The first direction is from the cathode toward the anode.Type: ApplicationFiled: February 22, 2022Publication date: March 2, 2023Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATIONInventors: Shigeya KIMURA, Masaya YAMAMITSU, Hisao MIYAZAKI, Hisashi YOSHIDA, Hiroshi TOMITA, Souichi UENO, Takeshi HOSHI, Tomoya TAKEDA
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Publication number: 20220166369Abstract: According to one embodiment, a power generation element includes a first conductive region including a first surface, a plurality of second conductive regions, and a plurality of insulating structure regions. The second conductive regions are arranged along the first surface. A gap is provided between the second conductive regions and the first surface. One of the structure regions is provided between one of the second conductive regions and the first surface. An other one of the structure regions is provided between an other one of the second conductive regions and the first surface.Type: ApplicationFiled: August 11, 2021Publication date: May 26, 2022Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATIONInventors: Shigeya KIMURA, Hisashi YOSHIDA, Hisao MIYAZAKI, Hiroshi TOMITA, Souichi UENO, Takeshi HOSHI, Tatsuo SHIMIZU
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Publication number: 20220149257Abstract: According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.Type: ApplicationFiled: August 17, 2021Publication date: May 12, 2022Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATIONInventors: Hisashi YOSHIDA, Hisao MIYAZAKI, Shigeya KIMURA, Hiroshi TOMITA, Souichi UENO, Takeshi HOSHI
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Publication number: 20220139660Abstract: According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes Alx1Ga1-x1N (0<x1?1) including a third element including at least one selected from the group consisting of Si, Ge, Te and Sn. A +c-axis direction of the third region includes a component in a direction from the first region toward the second region.Type: ApplicationFiled: August 13, 2021Publication date: May 5, 2022Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATIONInventors: Shigeya KIMURA, Hisashi YOSHIDA, Hisao MIYAZAKI, Hiroshi TOMITA, Souichi UENO, Takeshi HOSHI
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Patent number: 10718741Abstract: An ultrasonic flaw detecting apparatus comprises an array prove, an element-group defining circuit, a calculator, a signal receiver and a generator. The array probe comprises a plurality of piezoelectric elements, each of the plurality of piezoelectric elements being configured to transmit and receive an ultrasonic wave to and from an inspection object. The element-group defining circuit is configured to select, as an element group, plural consecutive piezoelectric elements from the plurality of piezoelectric elements, set a reference position of the element group based on array arrangement information of the plurality of piezoelectric elements in the element group and based on a weighting value of each of the plurality of piezoelectric elements in the element group, and calculate a propagation path of an ultrasonic beam from the element group based on the reference position and a predetermined refraction angle.Type: GrantFiled: March 23, 2018Date of Patent: July 21, 2020Assignees: KABUSHIKI KAISHA TOSHIBA, Toshiba Energy Systems & Solutions CorporationInventors: Setsu Yamamoto, Azusa Sugawara, Jun Semboshi, Kentaro Tsuchihashi, Takeshi Hoshi, Masaru Otsuka
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Publication number: 20190170701Abstract: An ultrasonic flaw detecting apparatus comprises an array prove, an element-group defining circuit, a calculator, a signal receiver and a generator. The array probe comprises a plurality of piezoelectric elements, each of the plurality of piezoelectric elements being configured to transmit and receive an ultrasonic wave to and from an inspection object. The element-group defining circuit is configured to select, as an element group, plural consecutive piezoelectric elements from the plurality of piezoelectric elements, set a reference position of the element group based on array arrangement information of the plurality of piezoelectric elements in the element group and based on a weighting value of each of the plurality of piezoelectric elements in the element group, and calculate a propagation path of an ultrasonic beam from the element group based on the reference position and a predetermined refraction angle.Type: ApplicationFiled: March 23, 2018Publication date: June 6, 2019Applicants: KABUSHIKI KAISHA TOSHIBA, Toshiba Energy Systems & Solutions CorporationInventors: Setsu YAMAMOTO, Azusa SUGAWARA, Jun SEMBOSHI, Kentaro TSUCHIHASHI, Takeshi HOSHI, Masaru OTSUKA
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Patent number: 9217731Abstract: A welding inspection method has steps of: generating transmission laser light for generating an ultrasonic wave and transmitting the transmission laser light to an object to be inspected during or after welding operation for irradiation; generating reception laser light for detecting an ultrasonic wave and transmitting the reception laser light to the object to be inspected for irradiation; collecting laser light scattered and reflected at surface of the object to be inspected; performing interference measurement of the laser light and obtaining an ultrasonic signal; and analyzing the ultrasonic signal obtained by the interference measurement. At least one of the transmission laser light generated in the transmission laser light irradiation step and the reception laser light generated in the reception laser light irradiation step is irradiated onto a welded metal part or a groove side surface.Type: GrantFiled: May 19, 2011Date of Patent: December 22, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Setsu Yamamoto, Takahiro Miura, Takeshi Hoshi, Tsuyoshi Ogawa, Yoshihiro Fujita, Shozo Hirano, Kazumi Watanabe, Satoshi Nagai, Masahiro Yoshida, Satoru Asai, Makoto Ochiai, Jun Semboshi
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Publication number: 20130160551Abstract: According to an embodiment, an ultrasonic flaw detection device is provided with: an ultrasonic probe, which applies ultrasonic waves, by driving a plurality of ultrasonic elements, to a test object to be inspected, and which receives reflected ultrasonic waves from the test object; and an analysis unit, which analyzes the signals of the reflected ultrasonic waves received by the ultrasonic probe, and which calculates the flaw detection results. The analysis unit calculates the flaw detection results using an ultrasonic wave propagation path obtained on the basis of the surface information of the test object having the ultrasonic waves applied thereto, thereby obtaining highly accurate detection results even the surface of the test object is formed in complex shape.Type: ApplicationFiled: December 21, 2012Publication date: June 27, 2013Inventors: Takahiro MIURA, Setsu YAMAMOTO, Makoto OCHIAI, Takeshi HOSHI, Kazumi WATANABE, Satoshi NAGAI, Masahiro YOSHIDA, Hiroyuki ADACHI, Tadahiro MITSUHASHI, Satoshi YAMAMOTO
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Patent number: 8329553Abstract: A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed.Type: GrantFiled: March 23, 2010Date of Patent: December 11, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Shogo Matsuo, Takeshi Hoshi, Keisuke Nakazawa, Kazuaki Iwasawa
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Publication number: 20120034754Abstract: A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.Type: ApplicationFiled: October 13, 2011Publication date: February 9, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Kazuaki Iwasawa, Takeshi Hoshi, Keisuke Nakazawa, Shogo Matsuo, Takashi Nakao, Ryu Kato, Tetsuya Kai, Katsuyuki Sekine
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Patent number: 8080463Abstract: A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.Type: GrantFiled: January 21, 2010Date of Patent: December 20, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Kazuaki Iwasawa, Takeshi Hoshi, Keisuke Nakazawa, Shogo Matsuo, Takashi Nakao, Ryu Kato, Tetsuya Kai, Katsuyuki Sekine
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Publication number: 20110284508Abstract: A welding system has: a welding mechanism, a reception laser light source, a reception optical mechanism, an interferometer, a data recording/analysis mechanism and a data recording/analysis mechanism. The reception laser light source generates reception laser light so as to irradiate the object to be welded with the reception laser light for the purpose of detecting a reflected ultrasonic wave obtained as a result of reflection of a transmission ultrasonic wave. The reception optical mechanism transmits, during or after welding operation, the reception laser light generated from the reception laser light source to the surface of the object to be welded for irradiation while moving, together with the welding mechanism, relative to the object to be welded and collects laser light scattered/reflected at the surface of the object to be welded.Type: ApplicationFiled: May 19, 2011Publication date: November 24, 2011Inventors: Takahiro Miura, Setsu Yamamoto, Takeshi Hoshi, Tsuyoshi Ogawa, Yoshihiro Fujita, Shozo Hirano, Kazumi Watanabe, Satoshi Nagai, Masahiro Yoshida, Jun Semboshi, Satoru Asai, Makoto Ochiai
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Publication number: 20110286005Abstract: A welding inspection method has steps of: generating transmission laser light for generating an ultrasonic wave and transmitting the transmission laser light to an object to be inspected during or after welding operation for irradiation; generating reception laser light for detecting an ultrasonic wave and transmitting the reception laser light to the object to be inspected for irradiation; collecting laser light scattered and reflected at surface of the object to be inspected; performing interference measurement of the laser light and obtaining an ultrasonic signal; and analyzing the ultrasonic signal obtained by the interference measurement. At least one of the transmission laser light generated in the transmission laser light irradiation step and the reception laser light generated in the reception laser light irradiation step is irradiated onto a welded metal part or a groove side surface.Type: ApplicationFiled: May 19, 2011Publication date: November 24, 2011Inventors: Setsu YAMAMOTO, Takahiro Miura, Takeshi Hoshi, Tsuyoshi Ogawa, Yoshihiro Fujita, Shozo Hirano, Kazumi Watanabe, Satoshi Nagai, Masahiro Yoshida, Satoru Asai, Makoto Ochiai, Jun Semboshi
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Publication number: 20100311220Abstract: A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed.Type: ApplicationFiled: March 23, 2010Publication date: December 9, 2010Inventors: Shogo MATSUO, Takeshi Hoshi, Keisuke Nakazawa, Kazuaki Iwasawa
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Publication number: 20100190317Abstract: A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.Type: ApplicationFiled: January 21, 2010Publication date: July 29, 2010Inventors: Kazuaki IWASAWA, Takeshi Hoshi, Keisuke Nakazawa, Shogo Matsuo, Takashi Nakao, Ryu Kato, Tetsuya Kai, Katsuyuki Sekine
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Patent number: 7682927Abstract: A method for manufacturing a semiconductor device includes coating a solution containing a perhydrosilazane polymer on a substrate, heating the solution to form a film containing the perhydrosilazane polymer, and oxidizing the film in a water vapor atmosphere at a reduced pressure to convert the film into an insulating film containing silicon and oxygen.Type: GrantFiled: March 24, 2006Date of Patent: March 23, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Takeshi Hoshi, Masahiro Kiyotoshi, Atsuko Kawasaki