Abstract: A metal induced crystallization process is provided which employs an amorphous silicon film precursor deposited by physical vapor deposition, wherein the precursor film does not readily undergo crystallization by partial solid phase crystallization. Using this physical vapor deposition amorphous silicon precursor film, the amorphous silicon film is transformed to polysilicon by metal induced crystallization wherein the crystalline growth occurs fastest at regions that have been augmented with a metal catalyst and proceeds extremely slowly, practically zero, at regions which bear no metal catalyst. Accordingly, by use of the physical vapor deposition amorphous silicon precursor film in the process of the present invention, the metal induced crystallization process may take place at higher annealing temperatures and shorter annealing times without solid phase crystallization taking place.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a semiconductor film containing silicon, implanting impurity elements to the semiconductor film, performing a dehydrogenation treatment to the semiconductor film, and activating the impurity elements in the dehydrogenated semiconductor film.

Abstract: A method for cutting by a plasma arc in which the nozzle is directly contacted with the base metal to be cut and is at the same electrical potential, and wherein the electrode is first approached near to the base metal to strike the arc and then withdrawn from it to an appropriate cutting distance, and which permits a thinner cutting line to be made and thinner materials to be cut.