Abstract: The present invention is to provide a laminated resin molding comprising a polyamide-based resin composition as an outer layer and being excellent in interlayer adhesion strength, in particular a laminated resin molding comprising a fluorine-containing resin as an inner layer.

Abstract: In a thermoplastic resin laminate having at least three thermoplastic resin layers, wherein an intermediate layer interposed between a first layer of a thermoplastic resin A1 and a second layer of a thermoplastic resin B1, which are not bonded each other, is a thermoplastic resin composition which contains as a main component a thermoplastic resin A2 having a bonding property to the thermoplastic resin A1 and a thermoplastic resin B2 having a bonding property to the thermoplastic resin B1 and forms a dispersion structure, wherein the thermoplastic resin A2 forms a continuous phase and the thermoplastic resin B2 forms a dispersed phase in the intermediate layer at the vicinity of the interface between the intermediate layer and the first layer, and wherein the thermoplastic resin B2 forms the continuous phase and the thermoplastic resin A2 forms the dispersed phase in the intermediate layer at the vicinity of the interface between the intermediate layer and the second layer, the first layer and the second laye

Abstract: The invention is aimed at reducing the influence of the pollution from impurities in the wafer to improve the wafer yield on the basis of prevention of the pollution from impurities while occurrence of slip lines in the wafer is minimized to enhance the efficiency of the surface treatment of the wafer loading faces of the vertical wafer board. For example, the surface of the jig for semiconductor wafers which is composed of the substrate of a high purity carbon is formed with a SiC film by the CVD method, said surface being ground by a grinding tool again formed of a SiC film. Hangover particles produced by said grinding operation are subjected to a high temperature oxydizing treatment to be dissolved thereafter. Application of this method to the vertical wafer board realizes that when n times of measurements are conducted for a length of Lmm in the range of L.times.n.gtoreq.100 mm to obtain a result that said SiC film has a maximum surface roughness Rmax. which is maintained constantly below 10 .mu.

Abstract: A heat treatment jig with a silicon carbide coating for production of a semiconductor includes a base material and a silicon carbide film formed on the surface of the base material by a CVD method. The silicon carbide film is formed from a plurality of layers substantially parallel to the surface of the base material, and at least one of the layers is formed as a nucleus formation layer while the other layers are formed as ordinary crystal layers so that crystal growth between the ordinary crystal layers across the nucleus formation layer is discontinuous while crystal growth of the silicon carbide in the ordinary crystal layers are continuous in a direction of thickness of the ordinary crystal layers.

Abstract: A carbon heater comprising heater members (11, 111, 121 . . . 161, 212, 222, 315, 325 . . . 345, 411, 515, 612) in which a plurality of carbon fiber bundles having a plurality of carbon fibers whose diameter is 5 to 15 .mu.m bundled are woven into a longitudinally elongated shape such as a wire shape or a tape shape and the impurity content is less than 10 ppm in ashes.

Abstract: The present invention is a SiC member and fabrication method thereof useful for heat treating semiconductors, wherein at least the surface of the member comprises: CVD-.beta.-phase SiC columnar crystals grown in perpendicular to the surface of the member; and CVD-.alpha.-phase SiC crystals grown up from interface of CVD-.beta.-phase columnar crystals. This structure thereby makes it possible to reduce the infrared ray transmittance of the heat treatment member and facilitates the heating of the heat treatment member by absorbing the infrared rays. Absorption of the IR rays results in favorable the temperature follow-up characteristics during the heat treatment of a semiconductor.

Abstract: A slide fastener having a split arrester for preventing a pair of interengaged fastener stringers S from accidental splitting when a slider is removed. The split arrester comprises interlocking male and female members mounted on a pair of fastener stringers contiguously to the respective terminal portions of opposed coupling element rows and substantially equal in thickness and width of the coupling elements E. The male member has a locking tongue portion projecting from an attachment base portion toward the female member and terminated in a protuberance. The female member has a locking hollow portion, for receiving the locking tongue portion and having a pair of resilient catch portions for gripping the neck of the protuberance from opposite sides in the direction of thickness of the fastener tape.

Abstract: According to the present invention there are provided a method and an apparatus capable of disintegrating used paper into long pulp fibers without tearing it mechanically. In the apparatus, a wall surface having an undulating section is formed on an inner side of a gas flow path, with a current of air having a velocity component parallel to the wall surface and a velocity component perpendicular to and striking against the wall surface is allowed to pass through the gas flow path. Finely cut used paper pieces are allowed to pass through the gas flow path while being carried by the air current. The parallel velocity component of the air current is set at 40 m or more. An impeller is mounted within a circular casing body having an inlet port and an outlet port, and undulating teeth are formed on the inner peripheral surface of the circular casing body. The used paper, which is sucked in from the above inlet port together with the air current, is cut beforehand into pieces.

Abstract: End members are located at the top and the bottom of a vertical heat treatment device. A plurality of support members are vertically mounted on the end members. A plurality of wafer hold members are fixed on the support members in a parallel manner, each of which is formed in an approximately circular arc shape. The wafer hold member is made of SiC by a CVD method or Si3N4 by a CVD method. The wafer hold member has a plate portion on which a wafer is to be placed and a reinforce portion connected to the plate portion. The plate portion is 100-1000 microns in thickness.

Abstract: A mirror for SOR includes a base (1) made of a heat resistant ceramic material having a surface, a first SiC coating (2, 3) formed on the surface of the base (1), which has a first smoothed surface, and a second SiC coating (4, 5) formed on the first smoothed surface of the first SiC coating (2, 3), which has a second smoothed surface. A third SiC coating can be formed on the smoothed surface of the second SiC coating (4).

Abstract: An improved logic circuit for switching noise reduction is disclosed. The logic circuit is provided between a voltage source line and a plurality of ground lines. The logic circuit according to the present invention changes connection to the ground line in response to a logic status change of an input signal by means of a switching circuit therein to isolate an input or output terminal from a switching noise on a predetermined ground line which tends to generate switching noise at the logic status change.