Abstract: A pressure-sensitive adhesive tape includes a base material and a pressure-sensitive adhesive layer laminated on at least one surface of the base material. The pressure-sensitive adhesive tape contains 5% by mass or greater and 95% by mass or less of an olefin-based resin having an olefin-based monomer unit with respect to a total amount (100% by mass) of the pressure-sensitive adhesive tape. The pressure-sensitive adhesive tape satisfies Relational Formula (1).

Abstract: A double-sided adhesive tape is provided for bonding two or more adherends. The double-sided adhesive tape has satisfactory rollability, excellent reworkability after cleavage, and excellent shear holding characteristics at high temperatures. The double-sided adhesive tape includes a foam base, a resin layer (A1) disposed in direct contact with one surface of the foam base, an adhesive layer (B1) disposed on A1 on a side opposite to the foam base, a resin layer (A2) disposed in direct contact with another surface of the foam base, and an adhesive layer (B2) disposed on A2 on a side opposite to the foam base. A1 and A2 are each formed of a crosslinked product of a composition containing a resin having a hydroxy group and a compound reacting with the hydroxy group, and the tensile modulus of each of A1 and A2 is 50 MPa or more and 1000 MPa or less.

Abstract: A sheet feeder includes a support to support a roll sheet winding a sheet, a sensor that is at a first position on the support and contacts a surface of the roll sheet to detect a level difference at a trailing edge of the roll sheet and output a first signal and a second signal, a roller that is at a second position different from the first position in a circumferential direction of the roll sheet on the support and contacts the surface of the roll sheet to guide the roll sheet, and circuitry to cause the roll sheet to rotate in a sheet feeding direction to feed the sheet, and detect the trailing edge of the roll sheet based on the first signal output from the sensor, and the second signal output from the sensor.

Abstract: A film forming apparatus according to an embodiment includes: a process chamber forming a film on a substrate; an abatement device detoxifying a first exhaust gas exhausted from the process chamber; a first supply pipe for supplying a gas containing water to the process chamber; a first vacuum pump provided in a first flow path of the first exhaust gas between the process chamber and the abatement device; a second vacuum pump provided in the first flow path between the first vacuum pump and the abatement device; and a first detector provided in the first flow path between the second vacuum pump and the abatement device and capable of detecting a hydrogenated gas.

Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains antimony (Sb), a second element, adn an oxide of a first element. The first element is at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), yttrium (Y), tantalum (Ta), lanthanum (La), cerium (Ce), magnesium (Mg), and titanium (Ti). The second element is at least one element selected from a group consisting of aluminum (Al), zinc (Zn), and gallium (Ga).

Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a switching layer provided between the first conductive layer and the third conductive layer; and a variable resistance layer provided between the third conductive layer and the second conductive layer. The switching layer contains antimony (Sb), a second element, and an oxide of a first element. The first element is at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), yttrium (Y), tantalum (Ta), lanthanum (La), cerium (Ce), magnesium (Mg), and titanium (Ti). The second element is at least one element selected from a group consisting of carbon (C), boron (B), nitrogen (N), silicon (Si), and tin (Sn).

Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains an oxide of a first element, which is at least one element selected from a group consisting of zirconium, yttrium, tantalum, lanthanum, cerium, titanium, hafnium, and magnesium, and a compound of a second element that is at least one element selected from a group consisting of zinc, tin, gallium, indium, and bismuth and a third element that is at least one element selected from a group consisting of tellurium, sulfur, and selenium.

Abstract: A problem to be solved by the present invention is to provide an adhesive tape capable of maintaining excellent adhesive strength for a long time even when sweat, sebum, an alcohol, or the like adheres thereto. The present invention relates to an adhesive tape having an adhesive layer containing an acrylic adhesive, the acrylic adhesive including an acrylic copolymer, in which the acrylic copolymer contains, as constituent components, (A) 5 to 20% by mass of a carboxyl group-containing monomer, (B) 0.01 to 1% by mass of a hydroxyl group-containing monomer, and (C) one or two or more selected from the group consisting of other alkyl (meth)acrylate monomers and alicyclic monomers, in which the average number of carbon atoms of saturated hydrocarbon groups included in the monomers (C) is 4 or less.

Abstract: A paper feeding device includes: a bearing base to which a spool inserted into a paper roll, around which a paper is wound, is detachably attachable; a support including: a leading-end detection sensor to detect a leading end of the paper on the paper roll and output a sensor signal; and a roller disposed at a position in the support different from the leading-end detection sensor in a circumferential direction of the paper roll, to cause the leading-end detection sensor and the roller to contact a surface of the paper roll attached to the bearing base; and to cause the leading-end detection sensor and the roller to be directed toward an axial center of the spool; and a motor to rotate the spool in a feeding direction to feed the paper and in a reverse direction opposite to the feeding direction.

Abstract: A semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.

Abstract: A storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and a switching layer disposed between the second conductive layer and the third conductive layer. The second conductive layer is disposed between the first conductive layer and the third conductive layer. The switching layer includes a first area, a second area, and a third area disposed between the first area and the second area. The first area includes a first element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The second area includes a second element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The third area includes a third element selected from Zr, Y, Ce, Hf, Al, Mg, and Nb, O or N, and a metal element selected from Te, Sb, Bi, Ti, and Zn.

Abstract: According to one embodiment, memory device includes a first, second, and third conductive layers in this order, a resistance change layer between the first and the second conductive layers, and a switching layer between the second and the third conductive layers. The switching layer contains: at least one first substance from a group consisting of oxide of at least one element from a group consisting of Cr, La, Ce, Y, Sc, Zr, and Hf, nitride of the at least one element, and oxynitride of the at least one element; a second substance being at least one metal from a group consisting of Te, Se, Sb, Bi, Ge, and Sn; and at least one third substance from a group consisting of oxide of the second substance, nitride of the second substance, and oxynitride of the second substance.

Abstract: According to one embodiment, a magnetic device includes a layered body with a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic body and the second magnetic body. A side wall layer covers at least a side wall of the first non-magnetic body of the layered body and includes at least one first substance chosen from silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance chosen from arsenic, tellurium, antimony, bismuth, and germanium.

Abstract: Provided are an adhesive tape having high flex resistance that can withstand repeated bending by folding operations and the like while maintaining high impact resistance, and an electronic device including the adhesive tape. The adhesive tape has an adhesive layer on one side or both sides of a foam base directly or with another layer interposed, in which the foam base contains an elastomer resin as a main component. The foam base has a tensile stress of 150 N/cm2 or less at 100% strain based on a stress-strain curve and a foam density of 0.2 g/cm3 to 2.0 g/cm3.

Abstract: Provided is an adhesive tape that has satisfactory conformability to a high step of an adherend while maintaining high impact resistance, and has removable performance that enables easy peeling when articles, such as electronic devices, are disassembled. The adhesive tape has an adhesive layer on one side or both sides of a foam base directly or with another layer interposed therebetween. The foam base has a tensile strength of 650 N/cm2 or more in a flow direction, a compressive strength at 25% of 1000 kPa or less, and a density of 0.35 g/cm3 to 0.90 g/cm3.

Abstract: A phosphor has a crystal structure of a garnet type and is expressed by a general formula BaaY3-a-bAl5-aSiaO12:Ceb (wherein a and b are values within a range that satisfies 12.0113?A+0.036b?0.003a?12.0153, when A denotes a lattice size of the crystal structure, a [mol] denotes an amount of Ba incorporated in solid solution, and b [mol] denotes an amount of Ce incorporated in solid solution).

Abstract: A method of manufacturing a scintillator material includes providing a substrate made of a quartz glass and having a recess formed therein; filling the recess with a raw material powder obtained by mixing an iodide raw material and SiO2 fine particles; after filling the recess, disposing a lid on the substrate to cover the recess; and after disposing the lid, heating the substrate, thereby forming a nanocomposite layer in which an iodide phosphor is introduced into a cristobalite structure.

Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

Abstract: A double-sided adhesive tape is provided for bonding two or more adherends. The double-sided adhesive tape has satisfactory rollability, excellent reworkability after cleavage, and excellent shear holding characteristics at high temperatures. The double-sided adhesive tape includes a foam base, a resin layer (A1) disposed in direct contact with one surface of the foam base, an adhesive layer (B1) disposed on A1 on a side opposite to the foam base, a resin layer (A2) disposed in direct contact with another surface of the foam base, and an adhesive layer (B2) disposed on A2 on a side opposite to the foam base. A1 and A2 are each formed of a crosslinked product of a composition containing a resin having a hydroxy group and a compound reacting with the hydroxy group, and the tensile modulus of each of A1 and A2 is 50 MPa or more and 1000 MPa or less.

Abstract: A semiconductor storage device including a phase change memory film having a composition containing at least Ge, Sb, Te, and Se, and containing Se as a design composition ratio to Te in a composition ratio showing a phase change memory property with at least three elements Ge, Sb, and Te. The composition ratio of Se is 33.6 atom % or less.