Abstract: One aspect relates to a light-emitting element having a layer forming a resonance mode. The light-emitting element includes a structure body constituted by a substrate and a semiconductor laminate body including a first cladding layer, a second cladding layer, an active layer, and a resonance-mode forming layer including a basic layer and modified refractive index regions. A laser light output region and a metal electrode film are on opposing surfaces of the structure body. The metal electrode film includes a first layer forming ohmic contact with the structure body, a second layer reflecting light from the resonance-mode forming layer, a third layer, and a fourth layer for solder bonding. The third layer has a different composition from the second layer and the fourth layer, and has a lower diffusion degree than the second layer and the fourth layer to that of a solder material.

Abstract: One aspect relates to a light-emitting element having a layer forming a resonance mode. The light-emitting element includes a structure body constituted by a substrate and a semiconductor laminate body including a first cladding layer, a second cladding layer, an active layer, and a resonance-mode forming layer including a basic layer and modified refractive index regions. A laser light output region and a metal electrode film are on opposing surfaces of the structure body. The metal electrode film includes a first layer forming ohmic contact with the structure body, a second layer reflecting light from the resonance-mode forming layer, a third layer, and a fourth layer for solder bonding. The third layer has a different composition from the second layer and the fourth layer, and has a lower diffusion degree than the second layer and the fourth layer to that of a solder material.

Abstract: The present semiconductor light emitting element is a semiconductor light emitting element including an active layer, an upper cladding layer and a lower cladding layer that sandwich the active layer, and a phase modulation layer optically coupled to the active layer, in which the phase modulation layer includes a basic layer and a plurality of different refractive index regions that are different in refractive index from the basic layer, and the plurality of different refractive index regions are disposed so as to form a pattern in a region outside a light line on a reciprocal lattice space in the phase modulation layer.

Abstract: The present semiconductor light emitting element is a semiconductor light emitting element including an active layer, an upper cladding layer and a lower cladding layer that sandwich the active layer, and a phase modulation layer optically coupled to the active layer, in which the phase modulation layer includes a basic layer and a plurality of different refractive index regions that are different in refractive index from the basic layer, and the plurality of different refractive index regions are disposed so as to form a pattern in a region outside a light line on a reciprocal lattice space in the phase modulation layer.

Abstract: A semiconductor laser stack apparatus 1 comprises three semiconductor lasers 2a to 2c, two copper plates 3a and 3b, two lead plates 4a and 4b, a supply tube 5, a discharge tube 6, four insulating members 7a to 7d, and three heat sinks 10a to 10c. Here, the heat sink 10a to 10c is formed by a lower planar member 12 formed with a supply water path groove portion 22, an intermediate planar member 14 formed with a plurality of water guiding holes 38, and an upper planar member 16 formed with a discharge water path groove portion 30 which are successively stacked one upon another, whereas their contact surfaces are joined together. The heat sink 10a to 10c is provided with pillar pieces 24 for connecting the bottom face of supply water path groove portion 22 and the lower face of intermediate planar member 14 to each other, and pillar pieces 32 for connecting the bottom face of discharge water path groove portion 30 and the upper face of intermediate planar member 14 to each other.

Abstract: A semiconductor laser stack apparatus 1 comprises three semiconductor lasers 2a to 2c, two copper plates 3a and 3b, two lead plates 4a and 4b, a supply tube 5, a discharge tube 6, four insulating members 7a to 7d, and three heat sinks 10a to 10c. Here, the heat sink 10a to 10c is formed by a lower planar member 12 having an upper face formed with a supply water path groove portion 22, an intermediate planar member 14 formed with a plurality of water guiding holes 38, and an upper planar member 16 having a lower face formed with a discharge water path groove portion 30 which are successively stacked one upon another, whereas their contact surfaces are joined together.

Abstract: A semiconductor laser stack apparatus 1 comprises three semiconductor lasers 2a to 2c, two copper plates 3a and 3b, two lead plates 4a and 4b, a supply tube 5, a discharge tube 6, four insulating members 7a to 7d, and three heat sinks 10a to 10c. Here, the heat sink 10a to 10c is formed by a lower planar member 12 formed with a supply water path groove portion 22, an intermediate planar member 14 formed with a plurality of water guiding holes 38, and an upper planar member 16 formed with a discharge water path groove portion 30 which are successively stacked one upon another, whereas their contact surfaces are joined together. The heat sink 10a to 10c is provided with pillar pieces 24 for connecting the bottom face of supply water path groove portion 22 and the lower face of intermediate planar member 14 to each other, and pillar pieces 32 for connecting the bottom face of discharge water path groove portion 30 and the upper face of intermediate planar member 14 to each other.