Abstract: A method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device by which a gettering ability can be given to an epitaxial wafer in which the formation of BMD is not able to be expected in both low- and high-temperature device manufacturing processes, with the manufacturing processes being lower and higher than 1,050° C. in temperature, and has a specific resistance of ≧10 m&OHgr;·cm. When this method is used, such BMD that is sufficient to obtain gettering can be formed in both the low- and high-temperature processes, with the manufacturing processes being lower and higher than 1,050° C. in temperature, even in the epitaxial wafer having a specific resistance of ≧10 m&OHgr;·cm by performing low-temperature heat treatment at 650˜900° C.

Abstract: The present invention provides a paper-laminated metal sheet having a structure in which at least one sheet of paper is laminated on at least one side of a metal plate via a pressure sensitive adhesive agent or an adhesive agent layer, and a protective layer is formed on a top surface of the paper-laminated side. With this structure, the paper-laminated metal sheet can be processed without wetting the paper with water, while thereby preventing the paper from being torn. In addition, the aesthetic appearance derived from the paper is kept for a long period of time. Due to high strength and processability derived from the metal base material, and high aesthetic appearance unbelievable for a metal plate derived from the paper, the paper-laminated metal sheet is valuable in various applications as a novel material.

Abstract: A susceptor for use in a vertical vapor-phase growth system designed to heat substrates by means of heat transferred and radiated from a susceptor heated to cause vapor-phase growth on the substrates. The susceptor has a large number of spot-faced portions for receiving substrates, respectively. Each spot-faced portion has a concentrical circular ridge to define a pair of inner and outer spaces at the inner and outer sides, respectively, of the ridge, each of the inner and outer spaces having a concave bottom having a circular radial section, so that a substrate is supported by the circular ridge. Thus, the substrate is uniformly heated by means of the RF induction heat from the susceptor, so that generation of a thermal stress exceeding the critical strength of the substrate is suppressed and substantially no slip occurs.