Abstract: A thermal poling method in which a poling treatment can be performed easily by a dry process. The poling treatment is performed on a PZT film by performing a heat treatment on the PZT film under a pressurized oxygen atmosphere at a temperature of 400° C. or more and 900° C. or less. The PZT film before the heat treatment has a single-domain crystal structure, and the PZT film after the heat treatment has a multi-domain crystal structure.

Abstract: To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(Ti1-xRux)O3 film and a PZT film formed on the first Sr(Ti1-xRux)O3 film, wherein the x satisfies a formula 1 below. 0.01?x?0.

Abstract: A pressurizing-type lamp annealing device which can easily handle a substrate to be treated having a large surface area. An embodiment of the pressurizing-type lamp annealing device includes: a treatment chamber (25); a holding part (23) disposed in the treatment chamber to hold a substrate to be treated; a gas-introduction mechanism for introducing a pressurized gas into the treatment chamber; a gas-discharge mechanism for discharging the gas in the treatment chamber; a transparent tube (20) disposed in the treatment chamber; and a lamp heater (19) placed in the treatment chamber to irradiate the substrate with a lamp light through the transparent tube.

Abstract: To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.

Abstract: A thermal poling method in which a poling treatment can be performed easily by a dry process. The poling treatment is performed on a PZT film by performing a heat treatment on the PZT film under a pressurized oxygen atmosphere at a temperature of 400° C. or more and 900° C. or less. The PZT film before the heat treatment has a single-domain crystal structure, and the PZT film after the heat treatment has a multi-domain crystal structure.

Abstract: A directional coupler includes: a first to a fourth port; a main line connecting the first and second ports; a first to a fourth subline section electromagnetically coupled to the main line; a first to a third matching section; and a stack. The first subline, first matching, third subline, third matching, fourth subline, second matching, and second subline sections are arranged in this order between the third and fourth port. The first and second matching sections include an inductor connecting two subline sections located on opposite sides of the matching section. Each of one or more conductor layers used to form the inductor includes two connection portions for electrical connection to respective other elements, and a line portion connecting the two connection portions. The inductor excluding the connection portions does not include potions that overlap each other when viewed in the stacking direction of the stack.

Abstract: A directional coupler includes: a main line connecting a first port and a second port; first to third subline sections each of which is formed of a line configured to be electromagnetically coupled to the main line; a first matching section provided between the first subline section and the second subline section; a second matching section provided between the second subline section and the third saline section; and a stack for integrating these components. The stack includes a plurality of dielectric layers and a plurality of conductor layers stacked on each other. Each of the first and second matching sections includes two inductors each formed using one or more of the conductor layers, and a capacitor formed using two or more of the conductor layers.

Abstract: To obtain a piezoelectric film having excellent piezoelectric properties. One aspect of the present invention relates to ferroelectric ceramics including a ZrO2 film oriented in (200), a Pt film that is formed on the ZrO2 film and is oriented in (200) and a piezoelectric film formed on the Pt film.

Abstract: To enhance piezoelectric property. One aspect of the present invention is ferroelectric ceramics including a Pb(Zr1-xTix)O3 film, wherein: the x satisfies the following formula 1, the Pb(Zr1-xTix)O3 film has a plurality of columnar single crystals, the x axis, the y axis and the z axis of each of the plurality of columnar single crystals are oriented in the same direction, respectively, 0<x<1??formula 1.

Abstract: To perform poling treatment in a simple procedure by dry process. A magnetic field poling device includes a first holding part configured to hold a film-to-be-poled (2); a second holding part configured to hold a magnet generating a magnetic field B to the film-to-be-poled (2); and a moving mechanism configured to move the first holding part or the second holding part in a direction perpendicular to the direction of the magnetic field B.

Abstract: To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1-XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1-XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below 0.3?X?0.7.

Abstract: To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention is a piezoelectric film having a crystal oriented in the c-axis direction and a crystal oriented in the a-axis direction, in which, when denoting the amount of a (004) component of the crystal oriented in the c-axis direction by C and denoting the amount of a (400) component of the crystal oriented in the a-axis direction by A, the piezoelectric film satisfies a formula 1 below. C/(A+C)?0.

Abstract: A directional coupler includes a first to a fourth port, a main line connecting the first port and the second port, a first and a second subline section configured to be electromagnetically coupled to the main line, and a phase shifter. The first subline section, the phase shifter, and the second subline section are arranged in this order in series between the third port and the fourth port. The phase shifter outputs a signal that is phase-delayed relative to an input signal. The phase delay amount of the output signal of the phase shifter relative to the input signal increases with increasing frequency of the input signal. A frequency twice as high as the frequency of the input signal at which the phase delay amount is 90 degrees is lower than the frequency of the input signal at which the phase delay amount is 180 degrees.

Abstract: To enhance properties of a ferromagnetic film formed on a substrate. One aspect of the present invention is a film structure body having a single crystal substrate, and a first ferromagnetic film oriented and formed on the single crystal substrate.

Abstract: To improve the single crystallinity of a stacked film in which a ZrO2 film and a Y2O3 film are stacked or a YSZ film. A crystal film includes a Zr film and a stacked film in which a ZrO2 film and a Y2O3 film formed on the Zr film are stacked, and has a peak half-value width when the stacked film is evaluated by X-ray diffraction being 0.05° to 2.0°.

Abstract: To improve a piezoelectric property. One aspect of the present invention is ferroelectric ceramics including: a Pb(Zr1-ATiA)O3 film; and a Pb(Zr1-xTix)O3 film formed on the Pb(Zr1-ATiA)O3 film; wherein the A and x satisfy the following Formulae 1 to 3: 0?A?0.1??Formula 1 0.1<x<1??Formula 2 A<x??Formula 3.

Abstract: A directional coupler includes: a main line connecting an input port and an output port; first to third subline sections each of which is formed of a line configured to be electromagnetically coupled to the main line; a first matching section provided between the first subline section and the second subline section; and a second matching section provided between the second subline section and the third subline section. The first and second matching sections are configured to cause changes in phase of high frequency signals passing therethrough, and have mutually different characteristics so as to create two attenuation poles in the frequency response of the coupling of the directional coupler.

Abstract: A directional coupler includes: a first to a fourth port; a main line connecting the first and second ports; a first to a fourth subline section electromagnetically coupled to the main line; a first to a third matching section; and a stack. The first subline, first matching, third subline, third matching, fourth subline, second matching, and second subline sections are arranged in this order between the third and fourth port. The first and second matching sections include an inductor connecting two subline sections located on opposite sides of the matching section. Each of one or more conductor layers used to form the inductor includes two connection portions for electrical connection to respective other elements, and a line portion connecting the two connection portions. The inductor excluding the connection portions does not include portions that overlap each other when viewed in the stacking direction of the stack.

Abstract: A directional coupler includes: a main line connecting a first port and a second port; first to third subline sections each of which is formed of a line configured to be electromagnetically coupled to the main line; a first matching section provided between the first subline section and the second subline section; a second matching section provided between the second subline section and the third saline section; and a stack for integrating these components. The stack includes a plurality of dielectric layers and a plurality of conductor layers stacked on each other. Each of the first and second matching sections includes two inductors each formed using one or more of the conductor layers, and a capacitor formed using two or more of the conductor layers.

Abstract: To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1-XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1-XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below 0.3?X?0.7.