Abstract: A method for manufacturing an epitaxial substrate includes the steps of: epitaxially growing a group III nitride semiconductor layer on a substrate; removing the substrate from a growth furnace; irradiating a surface of the group III nitride semiconductor layer with ultraviolet light while exposing the surface to an atmosphere containing oxygen; and measuring a sheet resistance value of the group III nitride semiconductor layer.

Abstract: This invention provides a water-based primer composition comprising an aqueous dispersion of modified polyolefin, aqueous urethane resin and/or aqueous acrylic resin, specific diester compound and electrically conducting pigment, the content of the diester compound being specific. The water-based primer composition excels in adhesive property to plastic substrates, and use of the water-based primer composition enables formation of multilayered coating film excelling in finished appearance and water resistance, being free of layer mixing even when the top coating of the next step is carried out after the primer's application without an intervening preheating.

Abstract: A process for the semiconductor laser diode is disclosed, which prevents the abnormal growth occurred at the second growth for the burying region of the buried hetero structure. The ICP (Induction-Coupled Plasma) CVD apparatus forms a silicon oxide file with a thickness of above 2 ?m as adjusting the bias power PBIAS. Patterning the silicon oxide mask and dry-etching the semiconductor layers, a mesa structure including the active layer may be formed. As leaving the patterned silicon oxide film, the second growth for the burying region buries the mesa structure. The residual stress of the silicon oxide film is ?250 to ?150 MPa at a room temperature, while, it is ?200 to 100 MPa at temperatures from 500 to 700° C.

Abstract: A process for the semiconductor laser diode is disclosed, which prevents the abnormal growth occurred at the second growth for the burying region of the buried hetero structure. The ICP (Induction-Coupled Plasma) CVD apparatus forms a silicon oxide file with a thickness of above 2 ?m as adjusting the bias power PBIAS. Patterning the silicon oxide mask and dry-etching the semiconductor layers, a mesa structure including the active layer may be formed. As leaving the patterned silicon oxide film, the second growth for the burying region buries the mesa structure. The residual stress of the silicon oxide film is ?250 to ?150 MPa at a room temperature, while, it is ?200 to 100 MPa at temperatures from 500 to 700° C.

Abstract: In an embodiment, a method of producing a diffraction grating comprises steps of: forming, on a man surface of a first member, a first mask having a plurality of resist patterns arranged at a Bragg diffraction period; etching the first member by use of the first mask, thereby providing the first member with a diffraction grating; removing the first mask; forming, on the diffraction grating, a second member of which an etching rate is lower than that of the first member; forming a second mask on a first region in a surface of the second member, the first region and a second region in the surface being adjacent to each other; and etching the first member and the second member by use of the second mask.

Abstract: In an embodiment, a method of producing a diffraction grating comprises steps of: forming, on a man surface of a first member, a first mask having a plurality of resist patterns arranged at a Bragg diffraction period; etching the first member by use of the first mask, thereby providing the first member with a diffraction grating; removing the first mask; forming, on the diffraction grating, a second member of which an etching rate is lower than that of the first member; forming a second mask on a first region in a surface of the second member, the first region and a second region in the surface being adjacent to each other; and etching the first member and the second member by use of the second mask.

Abstract: In a helicopter toy, a plurality of rotor blades are mounted to a flying body for rotation about a rotational axis and for angular movement about their respective pivotal axes extending perpendicularly to the rotational axis so that the rotor blades have their respective angles of attack which can be altered in pitch. An attack-angle altering unit is provided for altering the angles of attack of the respective rotor blades such that, when a power is transmitted to the rotor blades from a power source to rotate the rotor blades about the rotational axis, the angles of attack of the respective rotor blades are brought to their respective plus pitches to climb the flying body, while, when the transmission of the power from the power source to the rotor blades is released, the angles of attack of the respective rotor blades are brought to their respective minus pitches to cause the flying body to descend.

Abstract: A vibration proofing support structure for engines, capable of preventing the vibrations of an engine from being transmitted to the main frames on which the engine is supported, and improving the twisting strength of the main frames, consisting of left and right main frames provided on both sides of an engine, a connecting frame connecting the left and right main frames together and fixed to the lower surfaces of the front portions of the main frames, rotatable shaft provided at the intermediate portion of the connecting frame and fixing a front axle pivotably thereto, a front lower vibration proofing member provided on the portion of the connecting frame which is above the rotatable shaft, vibration restricting members provided in positions above and substantially crossing the front lower vibration proofing member and above the left and right main frames with clearances left between the restricting members and said main frames and left and right rear vibration proofing members via which the left and right re