Patents by Inventor Takeshi Kobiki

Takeshi Kobiki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and manufacturing method thereof
    Patent number: 8084314
    Abstract: A first insulation film is provided on a semiconductor substrate. A high resistance element formed from polysilicon is provided on the first insulation film. A second insulation film is provided on the high resistance element. A hydrogen diffusion preventing film having a hydrogen diffusion coefficient smaller than that of the second insulation film is provided on the second insulation film. The hydrogen diffusion preventing film covers a part of the high resistance element.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: December 27, 2011
    Assignee: Panasonic Corporation
    Inventors: Hidenori Iwadate, Takeshi Kobiki
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20100304545
    Abstract: A first insulation film is provided on a semiconductor substrate. A high resistance element formed from polysilicon is provided on the first insulation film. A second insulation film is provided on the high resistance element. A hydrogen diffusion preventing film having a hydrogen diffusion coefficient smaller than that of the second insulation film is provided on the second insulation film. The hydrogen diffusion preventing film covers a part of the high resistance element.
    Type: Application
    Filed: August 11, 2010
    Publication date: December 2, 2010
    Inventors: Hidenori IWADATE, Takeshi KOBIKI
  • Semiconductor device and manufacturing method thereof
    Patent number: 7795701
    Abstract: A first insulation film is provided on a semiconductor substrate. A high resistance element formed from polysilicon is provided on the first insulation film. A second insulation film is provided on the high resistance element. A hydrogen diffusion preventing film having a hydrogen diffusion coefficient smaller than that of the second insulation film is provided on the second insulation film. The hydrogen diffusion preventing film covers a part of the high resistance element.
    Type: Grant
    Filed: March 11, 2008
    Date of Patent: September 14, 2010
    Assignee: Panasonic Corporation
    Inventors: Hidenori Iwadate, Takeshi Kobiki
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20080224265
    Abstract: A first insulation film is provided on a semiconductor substrate. A high resistance element formed from polysilicon is provided on the first insulation film. A second insulation film is provided on the high resistance element. A hydrogen diffusion preventing film having a hydrogen diffusion coefficient smaller than that of the second insulation film is provided on the second insulation film. The hydrogen diffusion preventing film covers a part of the high resistance element.
    Type: Application
    Filed: March 11, 2008
    Publication date: September 18, 2008
    Inventors: Hidenori Iwadate, Takeshi Kobiki