Abstract: A first light-emitting element and a second light-emitting element that have a resonance structure that causes output light from a light-emission functional layer to resonate between a reflective layer and a semi-transmissive reflective layer, and a pixel definition layer, and in which an aperture part is formed to correspond to each of the first light-emitting element and the second light-emitting element, are formed on a base. A first interval between the reflective layer and the semi-transmissive reflective layer in the first light-emitting element and a second interval between the reflective layer and the semi-transmissive reflective layer in the second light-emitting element are different, and a film thickness of the pixel definition layer is less than a difference between the first interval and the second interval.

Abstract: A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

Abstract: A display device includes a scanning line, a first data line and a second data line, a first transistor circuit, a second transistor circuit, a first light emitting element including a first pixel electrode, and a second light emitting element including a second pixel electrode, wherein the first transistor circuit includes a first drive transistor and a first selection transistor, the second transistor circuit includes a second drive transistor and a second selection transistor, the first pixel electrode and the second pixel electrode are arranged in the second direction, the first transistor circuit and the second transistor circuit are arranged in the first direction, and a gate included in the first selection transistor and a gate included in the second selection transistor are electrically coupled to the scanning line.

Abstract: An electro-optical device is provided and includes a first light-emitting element configured to emit light in a first wavelength region, a second light-emitting element configured to emit light in a second wavelength region shorter than the first wavelength region, a third light-emitting element configured to emit light in a third wavelength region shorter than the second wavelength region, a first filter configured to transmit light in the first wavelength region and light in the second wavelength region and absorb light in the third wavelength region, and a second filter configured to transmit light in the first wavelength region and light in the third wavelength region and absorb light in the second wavelength region.

Abstract: A display device of the present disclosure includes a substrate, a lens layer including a lens, a light-transmitting layer that contacts a lens surface of the lens, and has translucency, a pixel electrode disposed between the substrate and the lens layer, and a color filter disposed between the pixel electrode and the lens layer. The lens is disposed so as to correspond to the pixel electrode. A refractive index of a constituent material for the lens is lower than a refractive index of a constituent material for the light-transmitting layer.

Abstract: A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

Abstract: A display device of the present disclosure includes a substrate, a lens layer including a lens, a light-transmitting layer that contacts a lens surface of the lens, and has translucency, a pixel electrode disposed between the substrate and the lens layer, and a color filter disposed between the pixel electrode and the lens layer. The lens is disposed so as to correspond to the pixel electrode. A refractive index of a constituent material for the lens is lower than a refractive index of a constituent material for the light-transmitting layer.

Abstract: The display device includes the first light-emitting element, a second light-emitting element, a first color filter through which light from the first light-emitting element passes, and a second color filter through which the light from the second light-emitting element passes. The relative positional relationship between the center of the first light-emitting element and the center of the first color filter is different from the relative positional relationship between the center of the second light-emitting element and the center of the second color filter.

Abstract: An electro-optical device includes a first light-emitting element configured to emit light in a first wavelength region, a second light-emitting element configured to emit light in a second wavelength region shorter than the first wavelength region, a third light-emitting element configured to emit light in a third wavelength region shorter than the second wavelength region, a first filter configured to transmit light in the first wavelength region and light in the second wavelength region and absorb light in the third wavelength region, and a second filter configured to transmit light in the second wavelength region and light in the third wavelength region and absorb light in the first wavelength region.

Abstract: An electro-optical device according to the present disclosure includes a substrate, a colored layer, a first light-emitting element and a second light-emitting element disposed between the substrate and the colored layer in a thickness direction of the substrate, and a wall portion disposed between the first light-emitting element and the colored layer in the thickness direction and between the first light-emitting element and the second light-emitting element in plan view, wherein a first refractive index of the wall portion and a second refractive index of the colored layer are different from each other, and the colored layer includes a curved surface that is in contact with the wall portion and protrudes toward the wall portion.

Abstract: The display device includes the first light-emitting element, a second light-emitting element, a first color filter through which light from the first light-emitting element passes, and a second color filter through which the light from the second light-emitting element passes. The relative positional relationship between the center of the first light-emitting element and the center of the first color filter is different from the relative positional relationship between the center of the second light-emitting element and the center of the second color filter.

Abstract: A display device includes a scanning line, a first data line and a second data line, a first transistor circuit, a second transistor circuit, a first light emitting element including a first pixel electrode, and a second light emitting element including a second pixel electrode, wherein the first transistor circuit includes a first drive transistor and a first selection transistor, the second transistor circuit includes a second drive transistor and a second selection transistor, the first pixel electrode and the second pixel electrode are arranged in the second direction, the first transistor circuit and the second transistor circuit are arranged in the first direction, and a gate included in the first selection transistor and a gate included in the second selection transistor are electrically coupled to the scanning line.

Abstract: An electro-optical device includes a first light-emitting element configured to emit light in a first wavelength region, a second light-emitting element configured to emit light in a second wavelength region shorter than the first wavelength region, a third light-emitting element configured to emit light in a third wavelength region shorter than the second wavelength region, a first filter configured to transmit light in the first wavelength region and light in the second wavelength region and absorb light in the third wavelength region, and a second filter configured to transmit light in the second wavelength region and light in the third wavelength region and absorb light in the first wavelength region.

Abstract: A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

Abstract: A first light-emitting element and a second light-emitting element that have a resonance structure that causes output light from a light-emission functional layer to resonate between a reflective layer and a semi-transmissive reflective layer, and a pixel definition layer, and in which an aperture part is formed to correspond to each of the first light-emitting element and the second light-emitting element, are formed on a base. A first interval between the reflective layer and the semi-transmissive reflective layer in the first light-emitting element and a second interval between the reflective layer and the semi-transmissive reflective layer in the second light-emitting element are different, and a film thickness of the pixel definition layer is less than a difference between the first interval and the second interval.

Abstract: An imaging light emitting device, and an optical unit configured to guide imaging light emitted from the imaging light emitting device are included, and the imaging light emitting device emits the imaging light at different densities according to a distortion generated in an optical system constituting the optical unit and an image position.

Abstract: A display device according to the present disclosure includes a substrate, a lens layer including a lens, a pixel electrode disposed between the substrate and the lens layer, and a color filter disposed between the pixel electrode and the lens layer. The color filter includes a colored portion that overlaps a part of the pixel electrode in plan view and is disposed between the substrate and the lens layer. The pixel electrode is provided in a display region in which an image is displayed. The lens overlaps a part of the pixel electrode in the plan view. A distance between the center of the pixel electrode and the display center of the display region is shorter than a distance between the center of the lens and the display center in the plan view.

Abstract: An electro-optical device comprising a plurality of pixels. Each of the plurality of pixels includes a first sub pixel and a second sub pixel that are arrayed in the first direction, a third sub pixel and a fourth sub pixel that are arrayed in the first direction, and a color filter corresponding to each of the first sub pixel, the second sub pixel, the third sub pixel, and the fourth sub pixel. Each of the first sub pixel, the second sub pixel, the third sub pixel, and the fourth sub pixel including a light-emitting element includes a light-emitting region, a supply circuit for supplying current to the light-emitting element, and a contact region in which a contact for electrically connecting the light-emitting element to the supply circuit is disposed.

Abstract: A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

Abstract: A first light-emitting element and a second light-emitting element that have a resonance structure that causes output light from a light-emission functional layer to resonate between a reflective layer and a semi-transmissive reflective layer, and a pixel definition layer, and in which an aperture part is formed to correspond to each of the first light-emitting element and the second light-emitting element, are formed on a base. A first interval between the reflective layer and the semi-transmissive reflective layer in the first light-emitting element and a second interval between the reflective layer and the semi-transmissive reflective layer in the second light-emitting element are different, and a film thickness of the pixel definition layer is less than a difference between the first interval and the second interval.