Patents by Inventor Takeshi Kususe
Takeshi Kususe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230317897Abstract: An optical member has a first surface, a second surface opposite to the first surface, and a lateral surface between the first surface and the second surface and includes: a reflective member including a light-reflective material and an inorganic binder; a wavelength conversion member disposed in the reflective member; and a heat dissipation member disposed in the reflective member apart from the wavelength conversion member.Type: ApplicationFiled: March 30, 2023Publication date: October 5, 2023Applicant: NICHIA CORPORATIONInventor: Takeshi KUSUSE
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Publication number: 20230238492Abstract: Provided is a light-emitting device including a light-emitting element, and a light-reflective covering member that covers the light-emitting element. The light-reflective covering member includes a light-reflective material having a plate shape, silica, and an alkali metal. The light-reflective material has a mean particle size of a range of 0.6 ?m to 43 ?m, and the light-reflective material has an average aspect ratio of 10 or greater.Type: ApplicationFiled: March 29, 2023Publication date: July 27, 2023Applicant: NICHIA CORPORATIONInventors: Takeshi KUSUSE, Kazuya TAMURA
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Patent number: 10651336Abstract: A light-emitting device includes: a mounting base; a plurality of light-emitting elements mounted on or above the mounting base; a plurality of light-transmissive members respectively disposed on upper surfaces of the plurality of light-emitting elements; a plurality of light guide members respectively covering lateral surfaces of the plurality of light-emitting elements; a plurality of antireflective films respectively disposed on upper surfaces of the plurality of the light-transmissive members; and a covering member covering lateral surfaces of the plurality of antireflective films.Type: GrantFiled: September 23, 2019Date of Patent: May 12, 2020Assignee: NICHIA CORPORATIONInventors: Takeshi Kususe, Satoshi Shichijo, Kunihito Sugimoto
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Publication number: 20200020824Abstract: A light-emitting device includes: a mounting base; a plurality of light-emitting elements mounted on or above the mounting base; a plurality of light-transmissive members respectively disposed on upper surfaces of the plurality of light-emitting elements; a plurality of light guide members respectively covering lateral surfaces of the plurality of light-emitting elements; a plurality of antireflective films respectively disposed on upper surfaces of the plurality of the light-transmissive members; and a covering member covering lateral surfaces of the plurality of antireflective films.Type: ApplicationFiled: September 23, 2019Publication date: January 16, 2020Applicant: NICHIA CORPORATIONInventors: Takeshi KUSUSE, Satoshi SHICHIJO, Kunihito SUGIMOTO
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Patent number: 10461215Abstract: A method of manufacturing a light-emitting device includes: directly bonding a plurality of light-emitting elements to a collective light-transmissive member having a plate shape, each light-emitting element comprising a plurality of electrodes; subsequently, forming stud bumps on each electrode of each light-emitting element; subsequently, dividing the collective light-transmissive member to obtain a plurality of light-transmissive members on each of which one or more of the light-emitting elements are bonded; and subsequently, mounting the light-emitting elements on or above a mounting base by a flip-chip technique.Type: GrantFiled: June 29, 2018Date of Patent: October 29, 2019Assignee: NICHIA CORPORATIONInventors: Takeshi Kususe, Satoshi Shichijo, Kunihito Sugimoto
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Patent number: 10326064Abstract: A light emitting device includes a light emitting element, a light transmissive member, and a cover member. The light transmissive member is disposed on an upper face of the light emitting element. The cover member covers a lateral face of the light emitting element and a lateral face of the light transmissive member, and includes first and second cover members. The first cover member is disposed adjacent to the lateral face of the light emitting element and the lateral face of the light transmissive member, and contains a first light reflecting material and a fluorine-based first resin. The second cover member covers the first cover member, and contains a second light reflecting material and a second resin. A refractive index difference between the first light reflecting material and the first resin is larger than a refractive index difference between the second light reflecting material and the second resin.Type: GrantFiled: April 17, 2018Date of Patent: June 18, 2019Assignee: NICHIA CORPORATIONInventors: Shusaku Bando, Dai Wakamatsu, Takeshi Kususe
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Patent number: 10243124Abstract: A light emitting device includes a light emitting element having a light emitting surface from which the light emitting element is configured to emit a first light having a first peak emission wavelength in a wavelength range of 380 nm or longer and 430 nm or shorter. A light transform layer is disposed on the light emitting surface of the light emitting element to transform the first light to a second light having a second peak wavelength longer than the first peak wavelength. A reflecting film is provided on the light transform layer to reflect the first light and to transmit the second light. The reflecting film has a reflectivity of 40% or more in a reflection spectrum of the reflecting film with respect to a light having a wavelength of 380 nm or longer and 430 nm or shorter and an angle of incidence from 0° to 85°.Type: GrantFiled: December 5, 2017Date of Patent: March 26, 2019Assignee: NICHIA CORPORATIONInventors: Taiki Yuasa, Takeshi Kususe
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Publication number: 20190006554Abstract: A method of manufacturing a light-emitting device includes: directly bonding a plurality of light-emitting elements to a collective light-transmissive member having a plate shape, each light-emitting element comprising a plurality of electrodes; subsequently, forming stud bumps on each electrode of each light-emitting element; subsequently, dividing the collective light-transmissive member to obtain a plurality of light-transmissive members on each of which one or more of the light-emitting elements are bonded; and subsequently, mounting the light-emitting elements on or above a mounting base by a flip-chip technique.Type: ApplicationFiled: June 29, 2018Publication date: January 3, 2019Applicant: NICHIA CORPORATIONInventors: Takeshi KUSUSE, Satoshi SHICHIJO, Kunihito SUGIMOTO
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Publication number: 20180309035Abstract: A light emitting device Includes a light emitting element, a light transmissive member, and a cover member. The light transmissive member is disposed on an upper face of the light emitting element. The cover member covers a lateral face of the light emitting element and a lateral face of the light transmissive member, and includes first and second cover members. The first cover member is disposed adjacent to the lateral face of the light emitting element and the lateral face of the light transmissive member, and contains a first light reflecting material and a fluorine-based first resin. The second cover member covers the first cover member, and contains a second light reflecting material and a second resin. A refractive index difference between the first light reflecting material and the first resin is larger than a refractive index difference between the second light reflecting material and the second resin.Type: ApplicationFiled: April 17, 2018Publication date: October 25, 2018Inventors: Shusaku BANDO, Dai WAKAMATSU, Takeshi KUSUSE
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Publication number: 20180182941Abstract: A light emitting device includes a light emitting element having a light emitting surface from which the light emitting element is configured to emit a first light having a first peak emission wavelength in a wavelength range of 380 nm or longer and 430 nm or shorter. A light transform layer is disposed on the light emitting surface of the light emitting element to transform the first light to a second light having a second peak wavelength longer than the first peak wavelength. A reflecting film is provided on the light transform layer to reflect the first light and to transmit the second light. The reflecting film has a reflectivity of 40% or more in a reflection spectrum of the reflecting film with respect to a light having a wavelength of 380 nm or longer and 430 nm or shorter and an angle of incidence from 0° to 85°.Type: ApplicationFiled: December 5, 2017Publication date: June 28, 2018Applicant: NICHIA CORPORATIONInventors: Taiki YUASA, Takeshi Kususe
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Patent number: 9893238Abstract: A light emitting device includes a semiconductor light emitting element including a semiconductor stacked-layer body and an electrode disposed on a first surface of the semiconductor stacked-layer body; a resin member disposed on a first surface side of the semiconductor stacked-layer body; and a metal layer disposed in the resin member and electrically connected to the electrode. A recess is defined in an upper surface of the resin member. The metal layer is projected from the upper surface of the resin member, and is disposed to surround at least a portion of the recess.Type: GrantFiled: December 20, 2016Date of Patent: February 13, 2018Assignee: NICHIA CORPORATIONInventors: Takayuki Sogo, Takanobu Sogai, Takeshi Kususe
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Publication number: 20170104133Abstract: A light emitting device includes a semiconductor light emitting element including a semiconductor stacked-layer body and an electrode disposed on a first surface of the semiconductor stacked-layer body; a resin member disposed on a first surface side of the semiconductor stacked-layer body; and a metal layer disposed in the resin member and electrically connected to the electrode. A recess is defined in an upper surface of the resin member. The metal layer is projected from the upper surface of the resin member, and is disposed to surround at least a portion of the recess.Type: ApplicationFiled: December 20, 2016Publication date: April 13, 2017Applicant: NICHIA CORPORATIONInventors: Takayuki SOGO, Takanobu SOGAI, Takeshi KUSUSE
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Patent number: 9559006Abstract: A light emitting device includes a semiconductor light emitting element including a semiconductor stacked-layer body and an electrode disposed on a first surface of the semiconductor stacked-layer body; a resin member disposed on a first surface side of the semiconductor stacked-layer body; and a metal layer disposed in the resin member and electrically connected to the electrode. A recess is defined in an upper surface of the resin member. The metal layer is projected from the upper surface of the resin member, and is disposed to surround at least a portion of the recess.Type: GrantFiled: August 7, 2015Date of Patent: January 31, 2017Assignee: NICHIA CORPORATIONInventors: Takayuki Sogo, Takanobu Sogai, Takeshi Kususe
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Patent number: 9293674Abstract: A semiconductor device has a light emitting element, and a resin layer; the light emitting element includes a semiconductor laminated body in which a first semiconductor layer and a second semiconductor layer are laminated in sequence, a second electrode connected to the second semiconductor layer on an upper surface of the second semiconductor layer that forms an upper surface of the semiconductor laminated body, and a first electrode connected to the first semiconductor layer on an upper surface of the first semiconductor layer in which a portion of the second semiconductor layer on one surface of the semiconductor laminated body is removed and a portion of the first semiconductor layer is exposed; and the resin layer is configured to cover at least a side surface of the light emitting element, and an upper surface of the resin layer is lower than the upper surface of the semiconductor laminated body.Type: GrantFiled: February 10, 2014Date of Patent: March 22, 2016Assignees: NICHIA CORPORATION, CITIZEN ELECTRONICS CO., LTD., CITIZEN HOLDINGS CO., LTD.Inventors: Takeshi Kususe, Toshiaki Ogawa, Shunsuke Minato, Nodoka Oyamada
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Publication number: 20160043290Abstract: A light emitting device includes a semiconductor light emitting element including a semiconductor stacked-layer body and an electrode disposed on a first surface of the semiconductor stacked-layer body; a resin member disposed on a first surface side of the semiconductor stacked-layer body; and a metal layer disposed in the resin member and electrically connected to the electrode. A recess is defined in an upper surface of the resin member. The metal layer is projected from the upper surface of the resin member, and is disposed to surround at least a portion of the recess.Type: ApplicationFiled: August 7, 2015Publication date: February 11, 2016Applicant: Nichia CorporationInventors: Takayuki SOGO, Takanobu SOGAI, Takeshi KUSUSE
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Patent number: 8981420Abstract: A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.Type: GrantFiled: May 18, 2006Date of Patent: March 17, 2015Assignee: Nichia CorporationInventors: Takeshi Kususe, Yoshiyuki Aihara, Daisuke Sanga, Kouichiroh Deguchi
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Patent number: 8823031Abstract: A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.Type: GrantFiled: August 30, 2012Date of Patent: September 2, 2014Assignee: Nichia CorporationInventors: Takeshi Kususe, Naoki Azuma, Toshiaki Ogawa, Hisashi Kasai
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Publication number: 20140225143Abstract: A semiconductor device has a light emitting element, and a resin layer; the light emitting element includes a semiconductor laminated body in which a first semiconductor layer and a second semiconductor layer are laminated in sequence, a second electrode connected to the second semiconductor layer on an upper surface of the second semiconductor layer that forms an upper surface of the semiconductor laminated body, and a first electrode connected to the first semiconductor layer on an upper surface of the first semiconductor layer in which a portion of the second semiconductor layer on one surface of the semiconductor laminated body is removed and a portion of the first semiconductor layer is exposed; and the resin layer is configured to cover at least a side surface of the light emitting element, and an upper surface of the resin layer is lower than the upper surface of the semiconductor laminated body.Type: ApplicationFiled: February 10, 2014Publication date: August 14, 2014Applicants: NICHIA CORPORATION, CITIZEN HOLDINGS CO., LTD., CITIZEN ELECTRONICS CO., LTD.Inventors: Takeshi KUSUSE, Toshiaki OGAWA, Shunsuke MINATO, Nodoka OYAMADA
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Patent number: 8742438Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.Type: GrantFiled: December 11, 2012Date of Patent: June 3, 2014Assignee: Nichia CorporationInventors: Takeshi Kususe, Takahiko Sakamoto
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Publication number: 20130049053Abstract: A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.Type: ApplicationFiled: August 30, 2012Publication date: February 28, 2013Applicant: NICHIA CORPORATIONInventors: Takeshi KUSUSE, Naoki Azuma, Toshiaki Ogawa, Hisashi Kasai