Abstract: A wiring board includes a core layer having a first through hole formed therein, a magnetic resin filled inside the first through hole, a second through hole formed in the magnetic resin, and a plating film covering an inner wall surface of the second through hole. The plating film includes an electroless plating film, and an electrolytic plating film. The electroless plating film makes direct contact with an inner wall surface of the second through hole.

Abstract: A coated tool in a non-limiting embodiment of the present disclosure includes a base and a coating film located on the base. The coated tool includes a first surface, a second surface adjacent to the first surface, and a cutting edge located on at least a part of a ridge part of the first surface and the second surface. The coating film includes an AlTiN film. The coating film has a first compressive stress ?11 in a first direction which is parallel to a surface of the base and intersects with the cutting edge at an angle of 90°, and a second compressive stress ?22 in a second direction which intersects with the first direction at an angle of 90°. The first compressive stress ?11 is different from the second compressive stress ?22.

Abstract: A coated tool in a non-limiting embodiment of the present disclosure includes a base and a coating film located on the base. The coated tool includes a first surface, a second surface adjacent to the first surface, and a cutting edge located on at least a part of a ridge part of the first surface and the second surface. The coating film includes an AlTiN film. The coating film has a first compressive stress ?11 in a first direction which is parallel to a surface of the base and intersects with the cutting edge at an angle of 90°, and a second compressive stress ?22 in a second direction which intersects with the first direction at an angle of 90°. The first compressive stress ?11 is different from the second compressive stress ?22.

Abstract: A coated tool in a non-limiting embodiment of the present disclosure includes a base and a coating film located on the base. The coated tool includes a first surface, a second surface adjacent to the first surface, and a cutting edge located on at least a part of a ridge part of the first surface and the second surface. The coating film includes an AlTiN film including Ti, Al and N. A first Al ratio and a second Al ratio are 0.7 or more. The first Al ratio is Al/(Al+Ti) at a point located 0.1 mm away from the cutting edge, and the second Al ratio is Al/(Al+Ti) at a point located 0.2 mm away from the cutting edge in the first surface. The second Al ratio is larger than the first Al ratio.

Abstract: Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.

Abstract: An automobile seat includes a seat main body having a seat cushion frame; a seat supporting member; a link mechanism which allows the seat main body to shift between a first seat position and a second seat position corresponding to a forward-leaning posture; and a seat lock mechanism capable of being switched between a seat-locked state in which the seat main body is restrained at the first seat position and a lock-released state. The seat cushion frame is supported in a manner that a position thereof backward of the front link is suspended by the seat supporting member via the rear link. At the first seat position, a free-end supporting point of the rear link is positioned backward of a first vertical line passing a fixed-end supporting point of the rear link, and at the second seat position, the free-end supporting point is positioned forward the first vertical line.

Abstract: Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.

Abstract: A mixed gas containing a precursor gas, an additive gas and a carrier gas is supplied to a preform stored in an electric furnace, and silicon carbide is deposited by chemical vapor deposition or chemical vapor phase impregnation to form a film. The preform includes multiple fiber bundles, and the fiber bundles include multiple fibers. This heat-resistant composite material includes a ceramic fiber preform impregnated with silicon carbide, and producing the composite material involves a step in which silicon carbide is deposited between the fibers to integrate the fibers which configure the fiber bundles, and a step in which silicon carbide is deposited between the fiber bundles to integrate the fiber bundles. Hereby, uniformity of embedding and growth rate of the silicon carbide film are both attained.

Abstract: In the present embodiment, in the production of a heat-resistant composite material resulting from impregnating a ceramic fiber preform with silicon carbide, a mixed gas containing starting material gas, an additive gas, and a carrier gas is supplied to a substrate having a minute structure such as a preform stored in an electric furnace, silicon carbide is deposited to form a film by means of a chemical vapor deposition method or a chemical vapor infiltration method, and the film formation growth speed and embedding uniformity are controlled by means of the amount of additive gas added to the starting material gas, the starting material gas contains tetramethylsilane, and the additive gas contains a molecule containing chlorine such as methyl chloride or hydrogen chloride. The film formation growth speed and embedding uniformity of the silicon carbide are both achieved.

Abstract: An automobile seat includes a seat main body having a seat cushion frame; a seat supporting member; a link mechanism which allows the seat main body to shift between a first seat position and a second seat position corresponding to a forward-leaning posture; and a seat lock mechanism capable of being switched between a seat-locked state in which the seat main body is restrained at the first seat position and a lock-released state. The seat cushion frame is supported in a manner that a position thereof backward of the front link is suspended by the seat supporting member via the rear link. At the first seat position, a free-end supporting point of the rear link is positioned backward of a first vertical line passing a fixed-end supporting point of the rear link, and at the second seat position, the free-end supporting point is positioned forward the first vertical line.

Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.

Abstract: In the present embodiment, in the production of a heat-resistant composite material resulting from impregnating a ceramic fiber preform with silicon carbide, a mixed gas containing starting material gas, an additive gas, and a carrier gas is supplied to a substrate having a minute structure such as a preform stored in an electric furnace, silicon carbide is deposited to form a film by means of a chemical vapor deposition method or a chemical vapor infiltration method, and the film formation growth speed and embedding uniformity are controlled by means of the amount of additive gas added to the starting material gas, the starting material gas contains tetramethylsilane, and the additive gas contains a molecule containing chlorine such as methyl chloride or hydrogen chloride. The film formation growth speed and embedding uniformity of the silicon carbide are both achieved.

Abstract: A mixed gas containing a precursor gas, an additive gas and a carrier gas is supplied to a preform stored in an electric furnace, and silicon carbide is deposited by chemical vapor deposition or chemical vapor phase impregnation to form a film. The preform includes multiple fiber bundles, and the fiber bundles include multiple fibers. This heat-resistant composite material includes a ceramic fiber preform impregnated with silicon carbide, and producing the composite material involves a step in which silicon carbide is deposited between the fibers to integrate the fibers which configure the fiber bundles, and a step in which silicon carbide is deposited between the fiber bundles to integrate the fiber bundles. Hereby, uniformity of embedding and growth rate of the silicon carbide film are both attained.

Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.

Abstract: An in-vehicle apparatus includes: a main body part; an analog input terminal; a video processing circuit; an audio processing circuit; an input control circuit; and a microcomputer.

Abstract: The present invention provides a technique for easily achieving a resume function for moving image content stored in one file in a removable recording medium. According to the present invention, a removable disc (Di1) in which moving image content stored in one file and another content are stored is played back, and, when playback of MPEG4 moving image file in the disc (Di1) that is played back is stopped and the disc (Di1) is removed, the file size, the file name, and the address of the MPEG4 moving image file are stored in a RAM 8. When the disc (Di1) is loaded again and the MPEG4 moving image file is played back, if it is determined that the disc (Di1) is identical to the removed disc by reading the file size and the file name stored in the RAM 8, playback of the MPEG4 moving image file is resumed on the basis of the address stored in the RAM 8.

Abstract: The present invention provides a technique for easily achieving a resume function for moving image content stored in one file in a removable recording medium. According to the present invention, a removable disc (Di1) in which moving image content stored in one file and another content are stored is played back, and, when playback of MPEG4 moving image file in the disc (Di1) that is played back is stopped and the disc (Di1) is removed, the file size, the file name, and the address of the MPEG4 moving image file are stored in a RAM 8. When the disc (Di1) is loaded again and the MPEG4 moving image file is played back, if it is determined that the disc (Di1) is identical to the removed disc by reading the file size and the file name stored in the RAM 8, playback of the MPEG4 moving image file is resumed on the basis of the address stored in the RAM 8.

Abstract: In a deposition method of forming a compound layer including a metal and an oxide by a supercritical fluid deposition method, a first material for generating the metal and a second material for generating the oxide are supplied to a supercritical fluid. With an increase of a thickness of the compound layer, a ratio of a supplied amount of the first material with respect to a supplied amount of the second material is increased.

Abstract: An in-vehicle apparatus includes: a main body part; an analog input terminal; a video processing circuit; an audio processing circuit; an input control circuit; and a microcomputer.

Abstract: The present invention provides an audio apparatus including: a decoding device configured to decode results of channel-by-channel reproduction of a multichannel sound source made up of at least a left channel, a right channel, and a center channel, and to down-mix the decoded results of channel-by-channel reproduction in accordance with the number of speakers configured in a speaker system without a center speaker corresponding to the center channel; an audio processing device configured to perform predetermined audio processing on the decoded results having undergone the down-mixing by the decoding device, and to get the processed results output from the speaker system; and a control device configured to control the audio processing device.