Abstract: A method for manufacturing a semiconductor device including the steps of: forming a plurality of metallic connection members on at least one of a temporary substrate and a semiconductor chip; thrusting the temporary substrate and the semiconductor chip against each other; filling a space between the temporary substrate and the semiconductor chip with resin to embed therein the metallic connection members; curing the resin to form a first protective layer; and removing the temporary substrate from the first protective layer and the metallic connection members. In accordance with the semiconductor device manufactured by the method, the package of the semiconductor device can be miniaturized with the realization of the cost down by using no interposer, and the handling and the performance test are more conveniently conducted.