Abstract: A movable carriage having front wheels and rear wheels includes, a detection unit detecting a direction caused by the operator pushing or pulling a grip unit, a rear-wheel steering angle changing unit changing a steering angle to cause a phase of the rear wheel to be the same as or opposite to the phase of the front wheel according to whether an angle between the detected direction and a center axis of the movable carriage is a predetermined angle or smaller, and a front-wheel steering angle changing unit changing a steering angle to cause a phase of the front wheel to be the same as or opposite to the detected direction according to whether the detected direction is a direction in which the movable carriage is pushed or pulled, when the angle between the detected direction and the center axis of the carriage exceeds the predetermined angle.

Abstract: An optical filter performs filtering on input monitor light in a transmission range having a carrier frequency of each channel being measured as a center frequency. Photoelectric convertors convert the monitor light filtered by the optical filter into an electrical monitor signal, and the signal detection unit judges whether signal light is present or absent based on the electrical monitor signal. Since the optical filter performs filtering, an S/N ratio of the monitor light becomes great and the signal detection unit can more accurately judge whether signal light is present or absent even in an optically noisy environment.

Abstract: A radiographic imaging apparatus for acquiring a radiographic image includes: a detecting unit configured to detect a position of a receiving unit, in which the receiving unit is configured to receive a radiant ray radiated by a radiating unit, which radiates a radiant ray, and output an electrical signal in accordance with the received radiant ray; and a display control unit configured to display, on a displaying unit, image data pertaining to the receiving unit and image data pertaining to a radiating area of the radiant ray of the radiating unit, overlapped with each other based on the position of the receiving unit detected by the detecting unit.

Abstract: To achieve an improved touch operation, a display control apparatus includes a monitor unit provided with a display unit and rotatably connected to a main body via a hinge portion, a touch panel configured to detect a touch operation on the display unit, a variable angle state detection unit configured to detect a position of the monitor unit, and a system control unit configured to display a Q button to be used for releasing lock at a position nearer to the hinge portion than other display items when it is determined that the monitor unit is moved from a first position to a second position based on the detection result of the variable angle state detection unit.

Abstract: An optical communication apparatus of a wavelength division multiplexing transmission system has a transponder having a double-wavelength tunable transceiver and a transceiver including a switching controller, and a ROADM device having a device that copes with a colorless function and a directionless function and can operate in cooperation with the transponder.

Abstract: Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.

Abstract: An optical filter performs filtering on input monitor light in a transmission range having a carrier frequency of each channel being measured as a center frequency. Photoelectric convertors convert the monitor light filtered by the optical filter into an electrical monitor signal, and the signal detection unit judges whether signal light is present or absent based on the electrical monitor signal. Since the optical filter performs filtering, an S/N ratio of the monitor light becomes great and the signal detection unit can more accurately judge whether signal light is present or absent even in an optically noisy environment.

Abstract: For a web application which takes time to execute processing, Internet connection between a web browser and the web application needs to be maintained until the completion of processing. In a web application server which provides conversion processing from document data into print data, the conversion processing itself is provided as a software process asynchronous with the web application. The web application only accepts a conversion processing execution request. The progress is confirmed using Comet communication, and the web server delays a response to an HTTP request.

Abstract: A semiconductor photo detector is provided that includes a layer structure deposited over a semiconductor substrate, and having a second mesa formed on the semiconductor substrate and a first mesa formed on the second mesa, wherein an outer periphery of the second mesa is located outside of the outer periphery of the first mesa in two-dimensional view, and wherein surfaces of the first mesa and the second mesa are covered by a passivation film.

Abstract: The present invention provides a semiconductor light receiving device that prevents local heat generation, has high-speed, high-sensitivity characteristics even at the time of an intensive light input, and exhibits high resistance to light inputs. The semiconductor light receiving device includes light absorption layers (3, 4) formed on an InP semiconductor substrate (1) wherein a buffer layer (21) containing a quaternary compositional material is formed between the InP semiconductor substrate (1) and the light absorption layers (3, 4).

Abstract: A light receiving element 1 has a semiconductor substrate 101; a first mesa 11 provided over the semiconductor substrate 101, and having an active region and a first electrode (p-side electrode 111) provided over the active region; a second mesa 12 provided over the semiconductor substrate 101, and having a semiconductor layer and a second electrode (n-side electrode 121) provided over the semiconductor layer; and a third mesa 13 provided over the semiconductor substrate 101, and having a semiconductor layer, wherein the third mesa 13 is arranged so as to surround the first mesa 11.

Abstract: Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.

Abstract: A method for initializing a rotational angle detector detecting rotational angles of two driven gears mated with a drive gear, rotated integrally with a detection subject, and obtaining rotational angle of the detection subject from the detected rotational angles. The method includes obtaining a first error and second error in each rotational angle of the driven gears when the drive gear is rotated in forward and rearward directions, obtaining an average value of the first and second errors, obtaining a difference between the average value and a theoretical rotational angle for the two driven gears when the rotational angle of the drive gear is 0°, and storing the difference as correction data added to each actual rotational angle of the two driven gears when obtaining the rotational angle of the detection subject.

Abstract: A semiconductor photo detector of the present invention includes a layer structure, having a selective etching layer of a first-type conductivity, a field-relaxing layer of the first-type conductivity, a multiplier layer, a field-relaxing layer of a second-type conductivity, a light absorption layer of the second-type conductivity, a selective etching layer of the second-type conductivity, a buffer layer of the second-type conductivity, a contact layer of the second-type conductivity, and an electrode in the side of the second-type conductivity, which are sequentially deposited over a semiconductor substrate, and having a second mesa formed on the semiconductor substrate and a first mesa formed on the second mesa, wherein the first mesa includes the buffer layer of the second-type conductivity, the contact layer of the second-type conductivity, and the electrode in the side of the second-type conductivity, wherein the second mesa includes the layer of the first-type conductivity, the multiplier layer, the lig

Abstract: In a semiconductor photo-detecting element (an avalanche photodiode), a high-sensitivity element is obtained by incorporating a multiplication layer having high-performance multiplication characteristics. By using a structure which reduces an electric field applied to an etching stopper layer, it is possible to use a multiplication layer having higher-performance multiplication characteristics (a multiplication layer which performs multiplication with a high electric field). The first method to realize this is to use a conductivity type multiplication layer. The second method is to use a structure in which a field buffer layer of the second conductivity type is incorporated. As a result of the use of these methods, a structure which applies an electric field lower than the multiplier electrical field to the etching stopper layer is obtained.

Abstract: A light receiving element 1 has a semiconductor substrate 101; a first mesa 11 provided over the semiconductor substrate 101, and having an active region and a first electrode (p-side electrode 111) provided over the active region; a second mesa 12 provided over the semiconductor substrate 101, and having a semiconductor layer and a second electrode (n-side electrode 121) provided over the semiconductor layer; and a third mesa 13 provided over the semiconductor substrate 101, and having a semiconductor layer, wherein the third mesa 13 is arranged so as to surround the first mesa 11.

Abstract: Disclosed is a semiconductor light-receiving device having high reproducibility and reliability. Also disclosed is a method for manufacturing a semiconductor light-receiving device. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.

Abstract: The present invention provides a semiconductor light receiving device that prevents local heat generation, has high-speed, high-sensitivity characteristics even at the time of an intensive light input, and exhibits high resistance to light inputs. The semiconductor light receiving device includes light absorption layers (3, 4) formed on an InP semiconductor substrate (1) wherein a buffer layer (21) containing a quaternary compositional material is formed between the InP semiconductor substrate (1) and the light absorption layers (3, 4).

Abstract: A rotational angle detector for detecting the rotational angle of the rotor in a wide range without requiring dark current. A first detection gear including an m number of teeth and a second detection gear including an L number of teeth are each engaged with a main gear rotated integrally with a steering shaft which includes an n number of teeth. A microcomputer calculates a rotational angle ? of the steering shaft using a rotational angle ? of the first detection gear within one cycle and a rotational angle ? of the second detection gear within one cycle.

Abstract: A method for initializing a rotational angle detector detecting rotational angles of two driven gears mated with a drive gear, rotated integrally with a detection subject, and obtaining rotational angle of the detection subject from the detected rotational angles. The method includes obtaining a first error and second error in each rotational angle of the driven gears when the drive gear is rotated in forward and rearward directions, obtaining an average value of the first and second errors, obtaining a difference between the average value and a theoretical rotational angle for the two driven gears when the rotational angle of the drive gear is 0°, and storing the difference as correction data added to each actual rotational angle of the two driven gears when obtaining the rotational angle of the detection subject.