Patents by Inventor Takeshi Nishioka
Takeshi Nishioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11970562Abstract: A phase difference film composed of a resin containing a copolymer including polymerization units A and B, the phase difference film including a cylindrical phase separation structure that generates a structural birefringence, the phase separation structure including a phase (A) having the polymerization unit A as a main component and a phase (B) having the polymerization unit B as a main component, and the phase difference film satisfying the following condition (1) or (2). Condition (1): D(A)>D(B) and f(B)>0.5, and a direction giving a maximum refractive index among in-plane directions and an orientation direction of a cylinder in the phase separation structure are parallel to each other. Condition (2): D(A)>D(B) and f(A)>0.5, and a direction giving a maximum refractive index among in-plane directions and an orientation direction of a cylinder in the phase separation structure are orthogonal to each other.Type: GrantFiled: March 18, 2019Date of Patent: April 30, 2024Assignee: ZEON CORPORATIONInventors: Takeshi Asada, Hironari Sudeji, Kensaku Fujii, Yusuke Yasu, Hiroya Nishioka
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Patent number: 11918327Abstract: A sphygmomanometer according to the present disclosure includes a main body that is mounted with a pump and is to be disposed on a dorsal surface of a wrist and a cuff that is to be attached around the wrist. The cuff extends along a circumferential direction of the wrist from an ulnar side end portion of the main body to a palmar surface and is set to a length covering an ulnar artery or a length covering a radial artery beyond the ulnar artery of a wrist having a preset maximum wrist circumference. A fluid is supplied from the pump to the cuff to press the wrist. A blood pressure is calculated based on a pressure of the fluid contained in the cuff.Type: GrantFiled: June 13, 2019Date of Patent: March 5, 2024Assignees: OMRON CORPORATION, OMRON HEALTHCARE CO., LTD.Inventors: Shohei Iwata, Takanori Nishioka, Akira Tampo, Yoshihiko Sano, Takeshi Kubo, Yu Higashimura
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Patent number: 10799917Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.Type: GrantFiled: May 7, 2019Date of Patent: October 13, 2020Assignees: EBARA CORPORATION, Toshiba Memory CorporationInventors: Yu Ishii, Hiroyuki Kawasaki, Kenichi Nagaoka, Kenya Ito, Masako Kodera, Hiroshi Tomita, Takeshi Nishioka
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Patent number: 10586694Abstract: According to one embodiment, a method for fabricating a semiconductor device includes performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state, contacting the back surface of the substrate to a stage to be retained, and providing a pattern on the front surface of the substrate by using lithography.Type: GrantFiled: August 19, 2016Date of Patent: March 10, 2020Assignee: Toshiba Memory CorporationInventors: Masako Kodera, Hiroshi Tomita, Takeshi Nishioka
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Publication number: 20190262870Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.Type: ApplicationFiled: May 7, 2019Publication date: August 29, 2019Inventors: Yu Ishii, Hiroyuki Kawasaki, Kenichi Nagaoka, Kenya Ito, Masako Kodera, Hiroshi Tomita, Takeshi Nishioka
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Publication number: 20190262869Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.Type: ApplicationFiled: May 7, 2019Publication date: August 29, 2019Inventors: Yu Ishii, Hiroyuki Kawasaki, Kenichi Nagaoka, Kenya Ito, Masako Kodera, Hiroshi Tomita, Takeshi Nishioka
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Patent number: 10328465Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.Type: GrantFiled: February 20, 2013Date of Patent: June 25, 2019Assignee: EBARA CORPORATIONInventors: Yu Ishii, Hiroyuki Kawasaki, Kenichi Nagaoka, Kenya Ito, Masako Kodera, Hiroshi Tomita, Takeshi Nishioka
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Publication number: 20160358768Abstract: According to one embodiment, a method for fabricating a semiconductor device includes performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state, contacting the back surface of the substrate to a stage to be retained, and providing a pattern on the front surface of the substrate by using lithography.Type: ApplicationFiled: August 19, 2016Publication date: December 8, 2016Inventors: Masako KODERA, Hiroshi TOMITA, Takeshi NISHIOKA
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Publication number: 20140346126Abstract: The present invention provides a method and system using a melting filter medium for separating a mixture (e.g., a mixture of an aqueous solution and either or both of oil and solids immiscible in the aqueous solution) to be separated. The mixture is separated into a liquid passing through the filter layer of the filter medium and a captured material captured in the filter layer. The filter medium and the captured material are separated by melting the filter medium.Type: ApplicationFiled: July 10, 2014Publication date: November 27, 2014Applicant: LOCAL INDEPENDENT ADMINISTRATIVE AGENCYInventors: Masahiro Teduka, Takeshi Nishioka, Masaharu Jo
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Patent number: 8641480Abstract: A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.Type: GrantFiled: February 28, 2011Date of Patent: February 4, 2014Assignees: Ebara Corporation, Kabushiki Kaisha ToshibaInventors: Masayuki Nakanishi, Tetsuji Togawa, Kenya Ito, Masaya Seki, Kenji Iwade, Takeo Kubota, Takeshi Nishioka
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Publication number: 20130217228Abstract: According to one embodiment, a method for fabricating a semiconductor device includes performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state, contacting the back surface of the substrate to a stage to be retained, and providing a pattern on the front surface of the substrate by using lithography.Type: ApplicationFiled: August 30, 2012Publication date: August 22, 2013Inventors: Masako KODERA, Hiroshi Tomita, Takeshi Nishioka
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Patent number: 8492276Abstract: A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.Type: GrantFiled: August 7, 2009Date of Patent: July 23, 2013Assignees: JSR Corporation, Kabushiki Kaisha ToshibaInventors: Taichi Abe, Hirotaka Shida, Akihiro Takemura, Mitsuru Meno, Shinichi Hirasawa, Kenji Iwade, Takeshi Nishioka
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Patent number: 8119517Abstract: A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.Type: GrantFiled: June 3, 2009Date of Patent: February 21, 2012Assignees: JSR Corporation, Kabushiki Kaisha ToshibaInventors: Hirotaka Shida, Yukiteru Matsui, Atsushi Shigeta, Shinichi Hirasawa, Hirokazu Kato, Masako Kinoshita, Takeshi Nishioka, Hiroyuki Yano
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Publication number: 20110217906Abstract: A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.Type: ApplicationFiled: February 28, 2011Publication date: September 8, 2011Inventors: Masayuki NAKANISHI, Tetsuji Togawa, Kenya Ito, Masaya Seki, Kenji Iwade, Takeo Kubota, Takeshi Nishioka
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Patent number: 7996813Abstract: A method for generating a pattern includes reading out an interconnect layout and a hole layout, the interconnect layout prescribing interconnect patterns, the hole layout prescribing hole patterns configured to connect to the interconnect patterns; extracting one of the hole patterns to be connected within the same interconnect layer level to one of the interconnect patterns in a pattern processing area; extracting a first processing area including the extracted hole pattern; calculating a first pattern density of the interconnect patterns included in the first processing area; and generating first additional patterns in the first processing area based on the first pattern density.Type: GrantFiled: January 7, 2010Date of Patent: August 9, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Masaaki Hatano, Motoya Okazaki, Junichi Wada, Takeshi Nishioka, Hisashi Kaneko, Takeshi Fujimaki, Kazuyuki Higashi, Kenji Yoshida, Noriaki Matsunaga
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Patent number: 7985685Abstract: A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.Type: GrantFiled: October 31, 2008Date of Patent: July 26, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Yukiteru Matsui, Masako Kinoshita, Seiro Miyoshi, Yoshikuni Tateyama, Takeshi Nishioka, Hiroyuki Yano
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Publication number: 20110081832Abstract: In one embodiment, a polishing device includes: a rotatable turntable, a holding unit, a separation wall, a slurry supply tube, and a cooling medium supply tube. On an upper surface of the rotatable turntable, a polishing pad is attached. The holding unit rotatably holds an object to be polished and disposes a polished surface of the object to be polished in a manner to face the polishing pad. The separation wall abuts on the upper surface of the polishing pad and sections the polishing pad into a polished region in which the holding unit is provided and an unpolished region in which the holding unit is not provided. The slurry supply tube supplies a slurry to the upper surface of the polishing pad in a polished region side. The cooling medium supply tube supplies a cooling medium to the upper surface of the polishing pad in the unpolished region.Type: ApplicationFiled: June 4, 2010Publication date: April 7, 2011Inventors: Kenro Nakamura, Yukiteru Matsui, Takeshi Nishioka
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Publication number: 20100115479Abstract: A method for generating a pattern includes reading out an interconnect layout and a hole layout, the interconnect layout prescribing interconnect patterns, the hole layout prescribing hole patterns configured to connect to the interconnect patterns; extracting one of the hole patterns to be connected within the same interconnect layer level to one of the interconnect patterns in a pattern processing area; extracting a first processing area including the extracted hole pattern; calculating a first pattern density of the interconnect patterns included in the first processing area; and generating first additional patterns in the first processing area based on the first pattern density.Type: ApplicationFiled: January 7, 2010Publication date: May 6, 2010Applicant: Kabushiki Kaisha ToshibaInventors: Masaaki Hatano, Motoya Okazaki, Junichi Wada, Takeshi Nishioka, Hisashi Kaneko, Takeshi Fujimaki, Kazuyuki Higashi, Kanji Yoshida, Noriaki Matsunaga
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Publication number: 20100075501Abstract: A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.Type: ApplicationFiled: August 7, 2009Publication date: March 25, 2010Applicants: JSR CORPORATION, Kabushiki Kaisha ToshibaInventors: Taichi ABE, Hirotaka Shida, Akihiro Takemura, Mitsuru Meno, Shinichi Hirasawa, Kenji Iwade, Takeshi Nishioka
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Patent number: 7667332Abstract: A method for generating a pattern includes reading out an interconnect layout and a hole layout, the interconnect layout prescribing interconnect patterns, the hole layout prescribing hole patterns configured to connect to the interconnect patterns; extracting one of the hole patterns to be connected within the same interconnect layer level to one of the interconnect patterns in a pattern processing area; extracting a first processing area including the extracted hole pattern; calculating a first pattern density of the interconnect patterns included in the first processing area; and generating first additional patterns in the first processing area based on the first pattern density.Type: GrantFiled: November 3, 2005Date of Patent: February 23, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Masaaki Hatano, Motoya Okazaki, Junichi Wada, Takeshi Nishioka, Hisashi Kaneko, Takeshi Fujimaki, Kazuyuki Higashi, Kenji Yoshida, Noriaki Matsunaga