Abstract: A pressure sensor includes: a pressure conversion unit and a signal processing circuit installed in a semiconductor substrate. The pressure conversion unit includes: a diaphragm formed by partially thinning the semiconductor substrate; and a plurality of piezo resistive elements formed on a surface of the diaphragm. The signal processing circuit is constituted by a complementary metal-oxide semiconductor (CMOS) integrated circuit formed in a p-type conductive region disposed around the diaphragm on the surface of the semiconductor substrate, and the piezo resistive elements are provided by forming an n-type conductive region in the p-type conductive region on the surface of the diaphragm by diffusion of n-type impurities and diffusing p-type impurities in the n-type conductive region.

Abstract: A coaxial connector to be connected to a mating connector includes a fixed assembly body and a movable assembly body connected to the fixed assembly body along an axial direction. The fixed assembly body includes a fixed side inner conductive body; a holding member for holding the movable assembly body; a fixed side insulation member for insulating between the fixed side inner conductive body and the holding member; and a first urging member for using the movable assembly body. The movable assembly body includes a movable side inner conductive body; a movable side outer conductive body; and a movable side insulation member. The movable side inner conductive body includes a first relay terminal having a retaining portion, a second relay terminal having a contact portion retained in the retaining portion, and a second urging member for urging the second relay terminal toward the fixed side inner conductive body.

Abstract: A traveling-wave tube is provided which has a heat radiating structure with good heat conductivity from the collector core to the heat sink. An insulator is disposed around and in contact with the outer peripheral surface of a collector electrode and has a slit in parallel with a tube axis. A radiator is disposed outside of and in contact with the insulator and has a slot formed on the top surface thereof extending in parallel with the tube axis. The radiator also has one or more grooves that insect the slot and receive therein a fastening member having a length shorter than the length of the groove and formed with screwed holes extending through both end portions thereof in the axial direction. By adjusting amounts by which bolts are screwed into the fastening member through the throughholes formed through the radiator, the gaps in the groove between the radiator and both end surfaces of the fastening member can be varied.

Abstract: The semiconductor device is inserted between a power source and a load. A current flowing between an external drain terminal D and an external source terminal S is controlled in accordance with a control voltage applied between an external gate terminal G and the external source terminal S. In addition, the semiconductor device has a main MOSFET 1 and a detecting MOSFET 2 each of which is inserted between the external drain terminal D and the external source terminal S, a protective circuit 3 which protects the main MOSFET 1 by a protective transistor 5 when the abnormality is detected thereby, and an impedance element 4 inserted between the protective MOSFET 5, and a junction connecting the external gate terminal G to a gate electrode of the detecting MOSFET 2.

Abstract: A traveling-wave tube is provided which has a heat radiating structure with good heat conductivity from the collector core to the heat sink. An insulator is disposed around and in contact with the outer peripheral surface of a collector electrode and has a slit in parallel with a tube axis. A radiator is disposed outside of and in contact with the insulator and has a slot formed on the top surface thereof extending in parallel with the tube axis. The radiator also has one or more grooves that insect the slot and receive therein a fastening member having a length shorter than the length of the groove and formed with screwed holes extending through both end portions thereof in the axial direction. By adjusting amounts by which bolts are screwed into the fastening member through the throughholes formed through the radiator, the gaps in the groove between the radiator and both end surfaces of the fastening member can be varied.

Abstract: The semiconductor device is inserted between a power source and a load. A current flowing between an external drain terminal D and an external source terminal S is controlled in accordance with a control voltage applied between an external gate terminal G and the external source terminal S. In addition, the semiconductor device has a main MOSFET 1 and a detecting MOSFET 2 each of which is inserted between the external drain terminal D and the external source terminal S, a protective circuit 3 which protects the main MOSFET 1 by a protective transistor 5 when the abnormality is detected thereby, and an impedance element 4 inserted between the protective MOSFET 5, and a junction connecting the external gate terminal G to a gate electrode of the detecting MOSFET 2.

Abstract: A collector of a traveling wave tube in which a larger quantity of loss ceramic members are arranged between an outer collector enclosure and an outer surface of a collector electrode for increasing high frequency loss to prevent RF leakage from the collector lead wire. The collector includes a collector electrode 2, heat conductive columnar ceramic elements 3, an outer collector enclosure 4 for maintaining vacuum and loss ceramic members 5 arranged between the outer surface of the collector electrode 2 and the inner surface of the outer collector enclosure 4.

Abstract: An electrical connector comprises a tubular body (1) with a hollow section (2) having a mouth (3), a female contact element (6) with a pair of contact pieces (7) extending in the hollow section (2) forming a throat portion (8) near the mouth (3), and a window (5) provided at a position corresponding to said throat portion (8).

Abstract: An electrical connector comprises a tubular body (1) with a hollow section (2) having a mouth (3), a female contact element (6) with a pair of contact pieces (7) extending in the hollow section (2) forming a throat portion (8) near the mouth (3), and a window (5) provided at a position corresponding to said throat portion (8).

Abstract: A collector of a traveling wave tube in which a larger quantity of loss ceramic members are arranged between an outer collector enclosure and an outer surface of a collector electrode for increasing high frequency loss to prevent RF leakage from the collector lead wire. The collector includes a collector electrode 2, heat conductive columnar ceramic elements 3, an outer collector enclosure 4 for maintaining vacuum and loss ceramic members 5 arranged between the outer surface of the collector electrode 2 and the inner surface of the outer collector enclosure 4.

Abstract: A collector of a traveling wave tube in which a larger quantity of loss ceramic members are arranged between an outer collector enclosure and an outer surface of a collector electrode for increasing high frequency loss to prevent RF leakage from the collector lead wire. The collector includes a collector electrode 2, heat conductive columnar ceramic elements 3, an outer collector enclosure 4 for maintaining vacuum and loss ceramic members 5 arranged between the outer surface of the collector electrode 2 and the inner surface of the outer collector enclosure 4.

Abstract: A flexible detecting terminal (6) is provided within an inside connector (1) in the vicinity of the cylindrical outer conductor (5) which surrounds a central conductor (4). An outside connector (52) has a central conductor (52A) for connection with the central conductor (4) and a conductive shell (52B) fitted over the cylindrical outer conductor (5). A contact section (6B) is provided on the detecting terminal (6) such that when the connectors (1) and (52) are not connected to each other, it is spaced from the cylindrical outer conductor (5) but when the connectors (1) and (52) are connected to each other, it is brought into resilient contact with the cylindrical outer conductor (5).

Abstract: A pair of male and female coaxial connectors which includes male and female rectangular housings with a plurality of through holes arranged at a predetermined interval in a lengthwise direction of the rectangular housing in which male and female terminals are arranged in at least one line. The male terminals includes a plurality of male outer conductors each fitted in one of the through holes and having upper and lower inner surfaces extending parallel to a specified plane which extends in the lengthwise direction and in a widthwise direction of the rectangular housing; a plurality of male dielectric blocks each fitted in a rear portion of one of the male outer conductors to define a cavity within the one male outer conductor; and a plurality of male central conductors each projecting into the cavity from one of the dielectric blocks and having upper and lower outer surfaces extending parallel to the specified plane.

Abstract: A low output capacitance, double-diffused field effect transistor effectively realizes the reduction in the output capacitance, by providing a drain electrode on one surface of a first conduction type semiconductor substrate, forming on the other surface of the substrate, through a double diffusion, second conduction type well regions and first conduction type source regions for connection therewith of a source electrode, forming channel regions in surface zone of the well regions disposed between first conduction type zone of the semiconductor substrate and the source regions, above which channel regions being provided gate electrodes through an insulating film, forming a guard ring region surrounding the well regions, and connecting at least one capacitance component means to the gate electrodes.

Abstract: A double-diffused metal-oxide-semiconductor field effect transistor (DMOSFET) device comprising an insulating layer having an opening on the top surface of a semiconductor wafer, channel regions and well regions and source regions formed through two stage deffusions of impurity materials respectively of a different conductivity type from and the same conductivity type as the wafer and carried out through the opening, and further comprising gate, source and drain electrodes which are formed after mashes provided on a surface area where the drain regions and the source electrode regions that are to be connected to the well regions and source regions and a further ion-implantation of an impurity material of the same conductivity type as the wafer into the channel regions, with the threshold voltage controlled to achieve a depletion type.

Abstract: A method for manufacturing double-diffused metal-oxide-semiconductor field effect transistor (DMOSFET) device is to form an insulating layer having an opening in top surface on a semiconductor wafer, channel regions and well regions and source regions through two stage diffusions of impurity materials respectively of a different conductivity type from and the same conductivity type as the wafer and carried out through the opening, and further gate, source and drain electrodes are formed after masks provided on a surface area where the drain regions and the source electrode regions that are to be connected to the well regions and source regions and a further ion-implantation of an impurity material of the same conductivity type as the wafer into the channel regions, with the threshold voltage controlled to achieve a depletion type.