Patents by Inventor Takeshi Ohfuji
Takeshi Ohfuji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7045260Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.Type: GrantFiled: April 23, 2004Date of Patent: May 16, 2006Assignee: Intel CorporationInventors: Takeshi Ohfuji, Hiroyuki Inomata, Shiho Sasaki, Masa-aki Kurihara
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Patent number: 7045259Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.Type: GrantFiled: September 26, 2001Date of Patent: May 16, 2006Assignee: Intel CorporationInventors: Takeshi Ohfuji, Hiroyuki Inomata, Shiho Sasaki, Masa-aki Kurihara
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Publication number: 20040197713Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.Type: ApplicationFiled: April 23, 2004Publication date: October 7, 2004Inventors: Takeshi Ohfuji, Hiroyuki Inomata, Shiho Sasaki, Masa-aki Kurihara
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Patent number: 6801295Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may include providing different thermal flux to different regions of the radiation sensitive layer to concurrently create different temperatures in those regions. The different temperatures may cause different physicochemical transformation of the regions that may be used to reduce critical dimension errors in those regions. A post exposure bake hot plate may be configured to provide heterogeneous radiant energy flux to a radiation sensitive layer by providing adjustable spacers that adjust a separation distance between the hot plate and the layer. The adjustable spacers may be adjusted prior to exposure image modification by using an adjustment plate having openings to provide access to and adjustment of the adjustable spacers.Type: GrantFiled: May 3, 2002Date of Patent: October 5, 2004Assignee: Intel CorporationInventors: Hiroyuki Inomata, Osamu Katada, Masa-aki Kurihara, Takeshi Ohfuji, Shiho Sasaki, Michiro Takano
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Publication number: 20030059688Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may include providing different thermal flux to different regions of the radiation sensitive layer to concurrently create different temperatures in those regions. The different temperatures may cause different physicochemical transformation of the regions that may be used to reduce critical dimension errors in those regions. A post exposure bake hot plate may be configured to provide heterogeneous radiant energy flux to a radiation sensitive layer by providing adjustable spacers that adjust a separation distance between the hot plate and the layer. The adjustable spacers may be adjusted prior to exposure image modification by using an adjustment plate having openings to provide access to and adjustment of the adjustable spacers.Type: ApplicationFiled: May 3, 2002Publication date: March 27, 2003Inventors: Hiroyuki Inomata, Osamu Katada, Masa-Aki Kurihara, Takeshi Ohfuji, Shiho Sasaki, Michiro Takano
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Publication number: 20030059719Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.Type: ApplicationFiled: September 26, 2001Publication date: March 27, 2003Inventors: Takeshi Ohfuji, Hiroyuki Inomata, Shiho Sasaki, Masa-Aki Kurihara
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Patent number: 5994025Abstract: There is provided a photoresist including (a) a resin composed of a polymer represented with the following general formula [1], and (b) a photo acid generator which produces acid when exposed to a light: ##STR1## wherein each of R.sup.1, R.sup.3 and R.sup.7 represents one of a hydrogen atom and a methyl group, R.sup.2 represents a hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.4 represents one of a hydrogen atom and a hydrocarbon group having a carbon number of 1 or 2, R.sup.5 represents a hydrocarbon group having a carbon number of 1 or 2, R.sup.Type: GrantFiled: December 10, 1996Date of Patent: November 30, 1999Assignee: NEC CorporationInventors: Shigeyuki Iwasa, Kaichiro Nakano, Katsumi Maeda, Takeshi Ohfuji, Etsuo Hasegawa
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Patent number: 5985522Abstract: There is provided a photoresist including (a) a resin composed of a polymer having a compound represented with the following general formula [1] within a structural unit thereof, and (b) a photo acid generator. ##STR1## wherein R.sup.1 represents a hydrogen atom, R.sup.2 represents a divalent hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 and R.sup.4 represent a hydrocarbon group having a carbon number of 1 or 2, and R.sup.5 represents one of (a) a hydrocarbon group having a carbon number of 1 to 12, (b) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an alkoxy group having a carbon number of 1 to 12, and (c) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an acyl group having a carbon number of 1 to 13. The above mentioned photoresist produces no extra polymer by side reaction.Type: GrantFiled: October 8, 1997Date of Patent: November 16, 1999Assignee: NEC CorporationInventors: Shigeyuki Iwasa, Kaichiro Nakano, Katsumi Maeda, Takeshi Ohfuji, Etsuo Hasegawa
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Patent number: 5770346Abstract: There is provided a photoresist including (a) a resin composed of a polymer having a compound represented with the following general formula ?1! within a structural unit thereof, and (b) a photo acid generator. ##STR1## wherein R.sup.1 represents a hydrogen atom, R.sup.2 represents a divalent hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 and R.sup.4 represent a hydrocarbon group having a carbon number of 1 or 2, and R.sup.5 represents one of (a) a hydrocarbon group having a carbon number of 1 to 12, (b) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an alkoxy group having a carbon number of 1 to 12, and (c) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an acyl group having a carbon number of 1 to 13. The above mentioned photoresist produces no extra polymer by side reaction.Type: GrantFiled: December 10, 1996Date of Patent: June 23, 1998Assignee: NEC CorporationInventors: Shigeyuki Iwasa, Kaichiro Nakano, Katsumi Maeda, Takeshi Ohfuji, Etsuo Hasegawa
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Patent number: 5665518Abstract: The present invention provides a vinylmonomer represented with the following general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a dihydric, bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 represents a group to be decomposed by acid or a hydrogen atom, X represents an alkylene group or a coupling group composed of an oxygen-carbon bond, and Y represents an alkylene group or a coupling group composed of a carbon-carbon bond. A photoresist obtained by polymerizing a monomer in accordance with the invention has a high transparency to FUV having a wavelength of at greatest 220 nm, high sensitivity and resolution to FUV, and a high dry etching resistance, and hence is suitable for exposure light such as FUV having a wavelength of at greatest 220 nm and, in particular, ArF excimer laser.Type: GrantFiled: January 19, 1996Date of Patent: September 9, 1997Assignee: NEC CorporationInventors: Katsumi Maeda, Kaichiro Nakano, Takeshi Ohfuji, Etsuo Hasegawa