Patents by Inventor Takeshi Ohse

Takeshi Ohse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200144371
    Abstract: A silicon carbide semiconductor device includes, sequentially, a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type provided on the first semiconductor layer, a third semiconductor layer of the first conductivity type provided on the second semiconductor layer, and a fourth semiconductor layer of a second conductivity type provided on the third semiconductor layer. A first electrode is provided on the first semiconductor layer, and a second electrode is provided on the fourth semiconductor layer. An impurity concentration of the second semiconductor layer is higher than that of the first semiconductor layer, and an impurity concentration of the third semiconductor layer is lower than that of the second semiconductor layer.
    Type: Application
    Filed: October 23, 2019
    Publication date: May 7, 2020
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Takeshi TAWARA, Mina OHSE
  • Patent number: 10388544
    Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: August 20, 2019
    Assignees: Kabushiki Kaisha Toshiba, Tokyo Electron Limited
    Inventors: Akio Ui, Hisataka Hayashi, Takeshi Kaminatsui, Shinji Himori, Norikazu Yamada, Takeshi Ohse, Jun Abe
  • Patent number: 10032611
    Abstract: A connection control method in a substrate processing apparatus is provided. The substrate processing apparatus comprises: a depressurized processing room; a susceptor that is provided in the processing room and configured to mount a wafer thereon; a HF high frequency power supply configured to apply a high frequency voltage for plasma generation to the susceptor; a LF high frequency power supply configured to apply a high frequency voltage for a bias voltage generation to the susceptor; and a DC voltage applying unit configured to apply a DC voltage of a rectangle-shaped wave to the susceptor, capable of improving a processing controllability in an etching process. The connection control method comprises controlling connection or disconnection between the susceptor and the LF high frequency power supply and connection or disconnection between the susceptor and the DC voltage applying unit when plasma is generated in the processing room.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: July 24, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shinji Himori, Norikazu Yamada, Takeshi Ohse
  • Publication number: 20170110296
    Abstract: A connection control method in a substrate processing apparatus is provided. The substrate processing apparatus comprises: a depressurized processing room; a susceptor that is provided in the processing room and configured to mount a wafer thereon; a HF high frequency power supply configured to apply a high frequency voltage for plasma generation to the susceptor; a LF high frequency power supply configured to apply a high frequency voltage for a bias voltage generation to the susceptor; and a DC voltage applying unit configured to apply a DC voltage of a rectangle-shaped wave to the susceptor, capable of improving a processing controllability in an etching process. The connection control method comprises controlling connection or disconnection between the susceptor and the LF high frequency power supply and connection or disconnection between the susceptor and the DC voltage applying unit when plasma is generated in the processing room.
    Type: Application
    Filed: December 27, 2016
    Publication date: April 20, 2017
    Inventors: Shinji Himori, Norikazu Yamada, Takeshi Ohse
  • Patent number: 9564287
    Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: February 7, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takeshi Ohse, Shinji Himori, Jun Abe, Norikazu Yamada
  • Publication number: 20150162223
    Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.
    Type: Application
    Filed: February 19, 2015
    Publication date: June 11, 2015
    Inventors: Akio UI, Hisataka HAYASHI, Takeshi KAMINATSUI, Shinji HIMORI, Norikazu YAMADA, Takeshi OHSE, Jun ABE
  • Patent number: 8852387
    Abstract: There is provided a plasma processing apparatus including: a shower head installed within a processing chamber for processing a substrate and facing a mounting table for mounting the substrate; a multiple number of gas exhaust holes formed through the shower head to be extended from a facing surface of the shower head to an opposite surface to the facing surface; a multiple number of openable and closable trigger holes formed through the shower head to be extended from the facing surface of the shower head to the opposite surface, and configured to allow plasma leakage from the facing surface to the opposite surface; and a partition wall installed in a gas exhaust space provided on the side of the opposite surface of the shower head to divide the gas exhaust space into a multiple number of regions, each region communicating with one or more trigger holes.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: October 7, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Hachishiro Iizuka, Jun Abe, Akihiro Yokota, Takeshi Ohse
  • Patent number: 8821684
    Abstract: A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.
    Type: Grant
    Filed: January 30, 2009
    Date of Patent: September 2, 2014
    Assignees: Kabushiki Kaisha Toshiba, Tokyo Electron Limited
    Inventors: Akio Ui, Naoki Tamaoki, Takashi Ichikawa, Hisataka Hayashi, Takeshi Kaminatsui, Shinji Himori, Norikazu Yamada, Takeshi Ohse, Jun Abe
  • Patent number: 8703002
    Abstract: A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
    Type: Grant
    Filed: January 9, 2013
    Date of Patent: April 22, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Tatsuo Matsudo, Shinji Himori, Noriaki Imai, Takeshi Ohse, Jun Abe, Takayuki Katsunuma
  • Publication number: 20140020832
    Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.
    Type: Application
    Filed: September 25, 2013
    Publication date: January 23, 2014
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takeshi OHSE, Shinji HIMORI, Jun ABE, Norikazu YAMADA
  • Patent number: 8568606
    Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: October 29, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Takeshi Ohse, Shinji Himori, Jun Abe, Norikazu Yamada
  • Patent number: 8286581
    Abstract: In a high-frequency power source, a malfunction is prevented by precisely removing harmonic components or a modulated wave component which develops while producing a plasma, and a proper high frequency power can be impressed on a plasma processing apparatus. The high-frequency power source includes a power monitor constituted of a directional coupler, a mixer, a 100 kHz low-pass filter, a low-frequency detector, and an oscillator. A 100 MHz high-frequency wave including modulated wave components and the like extracted by the directional coupler and 99.9 MHz high-frequency wave oscillated by the oscillator are added by the mixer. An output of the addition is converted by the low-frequency detector into 100 kHz, resulting in detection.
    Type: Grant
    Filed: June 10, 2004
    Date of Patent: October 16, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Toshihiro Hayami, Takeshi Ohse, Jun-Ichi Takahira, Jun-Ichi Shimada
  • Publication number: 20110214814
    Abstract: There is provided a plasma processing apparatus including: a shower head installed within a processing chamber for processing a substrate and facing a mounting table for mounting the substrate; a multiple number of gas exhaust holes formed through the shower head to be extended from a facing surface of the shower head to an opposite surface to the facing surface; a multiple number of openable and closable trigger holes formed through the shower head to be extended from the facing surface of the shower head to the opposite surface, and configured to allow plasma leakage from the facing surface to the opposite surface; and a partition wall installed in a gas exhaust space provided on the side of the opposite surface of the shower head to divide the gas exhaust space into a multiple number of regions, each region communicating with one or more trigger holes.
    Type: Application
    Filed: February 28, 2011
    Publication date: September 8, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hachishiro Iizuka, Jun Abe, Akihiro Yokota, Takeshi Ohse
  • Publication number: 20100243607
    Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.
    Type: Application
    Filed: March 30, 2010
    Publication date: September 30, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takeshi Ohse, Shinji Himori, Jun Abe, Norikazu Yamada
  • Publication number: 20100072172
    Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.
    Type: Application
    Filed: September 18, 2009
    Publication date: March 25, 2010
    Inventors: Akio Ui, Hisataka Hayashi, Takeshi Kaminatsui, Shinji Himori, Norikazu Yamada, Takeshi Ohse, Jun Abe
  • Publication number: 20090194508
    Abstract: A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.
    Type: Application
    Filed: January 30, 2009
    Publication date: August 6, 2009
    Inventors: Akio UI, Naoki TAMAOKI, Takashi ICHIKAWA, Hisataka HAYASHI, Takeshi KAMINATSUI, Shinji HIMORI, Norikazu YAMADA, Takeshi OHSE, Jun ABE
  • Publication number: 20090047795
    Abstract: A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
    Type: Application
    Filed: August 15, 2008
    Publication date: February 19, 2009
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tatsuo MATSUDO, Shinji Himori, Noriaki Imai, Takeshi Ohse, Jun Abe, Takayuki Katsunuma
  • Publication number: 20040222184
    Abstract: In a high-frequency power source, a malfunction is prevented by precisely removing harmonic components or a modulated wave component which develops while producing a plasma, and a proper high frequency power can be impressed on a plasma processing apparatus. The high-frequency power source includes a power monitor constituted of a directional coupler, a mixer, a 100 kHz low-pass filter, a low-frequency detector, and an oscillator. A 100 MHz high-frequency wave including modulated wave components and the like extracted by the directional coupler and 99.9 MHz high-frequency wave oscillated by the oscillator are added by the mixer. An output of the addition is converted by the low-frequency detector into 100 kHz, resulting in detection.
    Type: Application
    Filed: June 10, 2004
    Publication date: November 11, 2004
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Toshihiro Hayami, Takeshi Ohse, Jun-Ichi Takahira, Jun-Ichi Shimada