Patents by Inventor Takeshi Ohse
Takeshi Ohse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10388544Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.Type: GrantFiled: February 19, 2015Date of Patent: August 20, 2019Assignees: Kabushiki Kaisha Toshiba, Tokyo Electron LimitedInventors: Akio Ui, Hisataka Hayashi, Takeshi Kaminatsui, Shinji Himori, Norikazu Yamada, Takeshi Ohse, Jun Abe
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Patent number: 10032611Abstract: A connection control method in a substrate processing apparatus is provided. The substrate processing apparatus comprises: a depressurized processing room; a susceptor that is provided in the processing room and configured to mount a wafer thereon; a HF high frequency power supply configured to apply a high frequency voltage for plasma generation to the susceptor; a LF high frequency power supply configured to apply a high frequency voltage for a bias voltage generation to the susceptor; and a DC voltage applying unit configured to apply a DC voltage of a rectangle-shaped wave to the susceptor, capable of improving a processing controllability in an etching process. The connection control method comprises controlling connection or disconnection between the susceptor and the LF high frequency power supply and connection or disconnection between the susceptor and the DC voltage applying unit when plasma is generated in the processing room.Type: GrantFiled: December 27, 2016Date of Patent: July 24, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Shinji Himori, Norikazu Yamada, Takeshi Ohse
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Publication number: 20170110296Abstract: A connection control method in a substrate processing apparatus is provided. The substrate processing apparatus comprises: a depressurized processing room; a susceptor that is provided in the processing room and configured to mount a wafer thereon; a HF high frequency power supply configured to apply a high frequency voltage for plasma generation to the susceptor; a LF high frequency power supply configured to apply a high frequency voltage for a bias voltage generation to the susceptor; and a DC voltage applying unit configured to apply a DC voltage of a rectangle-shaped wave to the susceptor, capable of improving a processing controllability in an etching process. The connection control method comprises controlling connection or disconnection between the susceptor and the LF high frequency power supply and connection or disconnection between the susceptor and the DC voltage applying unit when plasma is generated in the processing room.Type: ApplicationFiled: December 27, 2016Publication date: April 20, 2017Inventors: Shinji Himori, Norikazu Yamada, Takeshi Ohse
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Patent number: 9564287Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.Type: GrantFiled: September 25, 2013Date of Patent: February 7, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Takeshi Ohse, Shinji Himori, Jun Abe, Norikazu Yamada
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Publication number: 20150162223Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.Type: ApplicationFiled: February 19, 2015Publication date: June 11, 2015Inventors: Akio UI, Hisataka HAYASHI, Takeshi KAMINATSUI, Shinji HIMORI, Norikazu YAMADA, Takeshi OHSE, Jun ABE
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Patent number: 8852387Abstract: There is provided a plasma processing apparatus including: a shower head installed within a processing chamber for processing a substrate and facing a mounting table for mounting the substrate; a multiple number of gas exhaust holes formed through the shower head to be extended from a facing surface of the shower head to an opposite surface to the facing surface; a multiple number of openable and closable trigger holes formed through the shower head to be extended from the facing surface of the shower head to the opposite surface, and configured to allow plasma leakage from the facing surface to the opposite surface; and a partition wall installed in a gas exhaust space provided on the side of the opposite surface of the shower head to divide the gas exhaust space into a multiple number of regions, each region communicating with one or more trigger holes.Type: GrantFiled: February 28, 2011Date of Patent: October 7, 2014Assignee: Tokyo Electron LimitedInventors: Hachishiro Iizuka, Jun Abe, Akihiro Yokota, Takeshi Ohse
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Patent number: 8821684Abstract: A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.Type: GrantFiled: January 30, 2009Date of Patent: September 2, 2014Assignees: Kabushiki Kaisha Toshiba, Tokyo Electron LimitedInventors: Akio Ui, Naoki Tamaoki, Takashi Ichikawa, Hisataka Hayashi, Takeshi Kaminatsui, Shinji Himori, Norikazu Yamada, Takeshi Ohse, Jun Abe
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Patent number: 8703002Abstract: A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.Type: GrantFiled: January 9, 2013Date of Patent: April 22, 2014Assignee: Tokyo Electron LimitedInventors: Tatsuo Matsudo, Shinji Himori, Noriaki Imai, Takeshi Ohse, Jun Abe, Takayuki Katsunuma
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Publication number: 20140020832Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.Type: ApplicationFiled: September 25, 2013Publication date: January 23, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Takeshi OHSE, Shinji HIMORI, Jun ABE, Norikazu YAMADA
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Patent number: 8568606Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.Type: GrantFiled: March 30, 2010Date of Patent: October 29, 2013Assignee: Tokyo Electron LimitedInventors: Takeshi Ohse, Shinji Himori, Jun Abe, Norikazu Yamada
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Patent number: 8286581Abstract: In a high-frequency power source, a malfunction is prevented by precisely removing harmonic components or a modulated wave component which develops while producing a plasma, and a proper high frequency power can be impressed on a plasma processing apparatus. The high-frequency power source includes a power monitor constituted of a directional coupler, a mixer, a 100 kHz low-pass filter, a low-frequency detector, and an oscillator. A 100 MHz high-frequency wave including modulated wave components and the like extracted by the directional coupler and 99.9 MHz high-frequency wave oscillated by the oscillator are added by the mixer. An output of the addition is converted by the low-frequency detector into 100 kHz, resulting in detection.Type: GrantFiled: June 10, 2004Date of Patent: October 16, 2012Assignee: Tokyo Electron LimitedInventors: Toshihiro Hayami, Takeshi Ohse, Jun-Ichi Takahira, Jun-Ichi Shimada
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Publication number: 20110214814Abstract: There is provided a plasma processing apparatus including: a shower head installed within a processing chamber for processing a substrate and facing a mounting table for mounting the substrate; a multiple number of gas exhaust holes formed through the shower head to be extended from a facing surface of the shower head to an opposite surface to the facing surface; a multiple number of openable and closable trigger holes formed through the shower head to be extended from the facing surface of the shower head to the opposite surface, and configured to allow plasma leakage from the facing surface to the opposite surface; and a partition wall installed in a gas exhaust space provided on the side of the opposite surface of the shower head to divide the gas exhaust space into a multiple number of regions, each region communicating with one or more trigger holes.Type: ApplicationFiled: February 28, 2011Publication date: September 8, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Hachishiro Iizuka, Jun Abe, Akihiro Yokota, Takeshi Ohse
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Publication number: 20100243607Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.Type: ApplicationFiled: March 30, 2010Publication date: September 30, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Takeshi Ohse, Shinji Himori, Jun Abe, Norikazu Yamada
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Publication number: 20100072172Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.Type: ApplicationFiled: September 18, 2009Publication date: March 25, 2010Inventors: Akio Ui, Hisataka Hayashi, Takeshi Kaminatsui, Shinji Himori, Norikazu Yamada, Takeshi Ohse, Jun Abe
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Publication number: 20090194508Abstract: A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.Type: ApplicationFiled: January 30, 2009Publication date: August 6, 2009Inventors: Akio UI, Naoki TAMAOKI, Takashi ICHIKAWA, Hisataka HAYASHI, Takeshi KAMINATSUI, Shinji HIMORI, Norikazu YAMADA, Takeshi OHSE, Jun ABE
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Publication number: 20090047795Abstract: A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.Type: ApplicationFiled: August 15, 2008Publication date: February 19, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Tatsuo MATSUDO, Shinji Himori, Noriaki Imai, Takeshi Ohse, Jun Abe, Takayuki Katsunuma
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Publication number: 20040222184Abstract: In a high-frequency power source, a malfunction is prevented by precisely removing harmonic components or a modulated wave component which develops while producing a plasma, and a proper high frequency power can be impressed on a plasma processing apparatus. The high-frequency power source includes a power monitor constituted of a directional coupler, a mixer, a 100 kHz low-pass filter, a low-frequency detector, and an oscillator. A 100 MHz high-frequency wave including modulated wave components and the like extracted by the directional coupler and 99.9 MHz high-frequency wave oscillated by the oscillator are added by the mixer. An output of the addition is converted by the low-frequency detector into 100 kHz, resulting in detection.Type: ApplicationFiled: June 10, 2004Publication date: November 11, 2004Applicant: TOKYO ELECTRON LIMITEDInventors: Toshihiro Hayami, Takeshi Ohse, Jun-Ichi Takahira, Jun-Ichi Shimada