Abstract: A colored fiber excellent in heat generation suppression property and fastness is provided. A method for manufacturing a colored fiber, and a fiber product is also provided. The colored fiber includes a fiber and a compound expressed by Formula (1) below.

Abstract: The semiconductor device includes a semiconductor chip that has a first principal surface, a withstand-voltage holding structure in a peripheral region in the first principal surface, a plurality of first conductive layers that are formed in the first principal surface, a second conductive layer overlaps with a space between the plurality of mutually adjacent first conductive layers in a plan view, and a protective layer that covers the plurality of first conductive layers and the second conductive layer.

Abstract: An object is to provide a SiC wafer in which a detection rate of an optical sensor can improved and a SiC wafer manufacturing method. The method includes: a satin finishing process S141 of satin-finishing at least a back surface 22 of a SiC wafer 20; an etching process 21 of etching at least the back surface 22 of the SiC wafer 20 by heating under Si vapor pressure after the satin finishing process S141; and a mirror surface processing process S31 of mirror-processing a main surface 21 of the SiC wafer 20 after the etching process S21. Accordingly, it is possible to obtain a SiC wafer having the mirror-finished main surface 21 and the satin-finished back surface 22.

Abstract: A silicon carbide single crystal includes a region in which a change of a specific resistance is repeated in a growth direction of the silicon carbide single crystal, and the change of the specific resistance is a gradual increase and decrease of the specific resistance. A changing range of the specific resistance may be within a range from 0.5% to 50% inclusive. A changing period of the gradual increase and decrease of the specific resistance that is repeated may be 500 ?m or less in terms of a length of the silicon carbide single crystal.

Abstract: A supply system for supplying ozone to an engine includes an electrolysis part that electrolyzes water to generate hydrogen and oxygen, a first supply part that supplies hydrogen generated by the electrolysis part to an intake pipe of the engine, an ozone generation part that generates ozone from oxygen generated by the electrolysis part, and a second supply part that supplies ozone generated by the ozone generation part to the intake pipe.

Abstract: A purification system for purifying exhaust gas from an engine includes a separation part that separates oxygen and nitrogen contained in air, an ozone generation part that generates ozone from oxygen separated by the separation part, and a supply part that supplies ozone generated by the ozone generation part to an intake pipe and an exhaust pipe of the engine. The purification system includes a supply control device that adjusts an amount of ozone supplied to the intake pipe and an amount of ozone supplied to the exhaust pipe according to a purification rate of exhaust gas of the engine.

Abstract: A raw material gas is supplied to a space in which a silicon carbide seed crystal is placed. A silicon carbide single crystal is grown on the seed crystal by keeping a monosilane partial pressure at 4 kPa or more and heating the space to a temperature of 2400° C. to 2700° C. The temperature of the space and supply of the raw material gas are controlled such that a temperature gradient of a growth crystal surface of the silicon carbide single crystal in a radial direction is 0.1° C./mm or less, and a radius of curvature of the growth crystal surface is 4.5 m or more, thereby producing a silicon carbide single crystal ingot having a growth length of 3 mm or more and an internal stress of 10 MPa or less. The ingot is then cut into a silicon carbide single crystal wafer.

Abstract: A surface-treated copper foil includes, on at least one surface of an untreated copper foil, a finely roughened layer formed of copper particles in which primary particles have a particle size of 10 nm to 110 nm or less, and a heat-resistant-treatment layer containing nickel and phosphorus, wherein a treated surface has a surface area ratio of 5.1 or more per 1 m2 of a two-dimensional area, the surface area ratio being calculated from a specific surface area measured by a krypton gas adsorption BET method, and a coating mass of the nickel is 2 mg or more per 1 m2 of a surface area.

Abstract: A surface-treated copper foil includes, on at least one surface of an untreated copper foil, a finely roughened layer formed of copper particles in which primary particles have a particle size of 10 nm to 110 nm or less, and a heat-resistant-treatment layer containing nickel and phosphorus, wherein a treated surface has a surface area ratio of 5.1 or more per 1 m2 of a two-dimensional area, the surface area ratio being calculated from a specific surface area measured by a krypton gas adsorption BET method, and a coating mass of the nickel is 2 mg or more per 1 m2 of a surface area.

Abstract: A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ?T in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ?T?10° ° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.

Abstract: Provided are: a method of producing a therapeutic agent for skin lesions suitable for treatment or prevention of a skin lesion such as a bedsore; and a therapeutic agent for skin lesions produced by the production method. The method of producing a therapeutic agent for skin lesions characterized by including a mixing step of mixing earthworm castings with water and a collecting step of collecting vaporized water generated from a mixture obtained in the mixing step to obtain a liquid; and the therapeutic agent for skin lesions produced by the production method. It is preferred to further mix an organic substance together with the earthworm castings and the water in the mixing step.

Abstract: Provided are a method for manufacturing a silicon carbide single crystal, which can suppress conversion of threading edge dislocations into prismatic plane dislocations and conversion of the prismatic plane dislocations into basal plane dislocations; and a silicon carbide single crystal ingot and a silicon carbide wafer, in which conversion from threading edge dislocations into prismatic plane dislocations and conversion from the prismatic plane dislocations into basal plane dislocations have been suppressed. A silicon carbide single crystal is grown on the surface of a seed substrate by a gas method so that a temperature gradient in the radial direction of the seed substrate takes a predetermined value or lower during the growth.

Abstract: Provided are a method for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot which ensure a high crystal growth rate and increase the ratio of conversion from basal plane dislocations to threading edge dislocations. The method prepares a seed substrate composed of silicon carbide having an off-angle in a [1-100] direction with respect to a {0001} plane; and grows a silicon carbide single crystal layer on the seed substrate by an HTCVD method, thereby converting basal plane dislocations contained in the seed substrate to threading edge dislocations during crystal growth.

Abstract: Provided are: a method of producing a therapeutic agent for skin lesions suitable for treatment or prevention of a skin lesion such as a bedsore; and a therapeutic agent for skin lesions produced by the production method. The method of producing a therapeutic agent for skin lesions characterized by including a mixing step of mixing earthworm castings with water and a collecting step of collecting vaporized water generated from a mixture obtained in the mixing step to obtain a liquid; and the therapeutic agent for skin lesions produced by the production method. It is preferred to further mix an organic substance together with the earthworm castings and the water in the mixing step.

Abstract: An outer peripheral region of this semiconductor device comprises: a guard ring; an insulating film and an intermediate insulating film that cover a surface of the guard ring; a field plate; a passivation film provided so as to cover both the insulating film and the field plate; and a barrier layer that has a smaller diffusion coefficient than the insulating film and the intermediate insulating film, and than the passivation film. The field plate includes a first section provided within an opening in the insulating film and the intermediate insulating film, and a second section having a protrusion that protrudes outward beyond the first section. The barrier layer has a section that is inserted between the protrusion and the guard ring.

Abstract: A raw material gas is supplied to a space in which a silicon carbide seed crystal is placed. A silicon carbide single crystal is grown on the seed crystal by keeping a monosilane partial pressure at 4 kPa or more and heating the space to a temperature of 2400° C. to 2700° C. The temperature of the space and supply of the raw material gas are controlled such that a temperature gradient of a growth crystal surface of the silicon carbide single crystal in a radial direction is 0.1° C./mm or less, and a radius of curvature of the growth crystal surface is 4.5 m or more, thereby producing a silicon carbide single crystal ingot having a growth length of 3 mm or more and an internal stress of 10 MPa or less. The ingot is then cut into a silicon carbide single crystal wafer.

Abstract: A surface treated copper foil includes: a copper foil; a finely roughened particle treatment layer of copper on at least one surface of the copper foil, the finely roughened particle treatment layer including fine copper particles having a particle size of 40 to 200 nm; a heat resistance treatment layer containing nickel on the finely roughened particle treatment layer; a rust prevention treatment layer containing at least chromium on the heat resistance treatment layer; and a silane coupling agent treatment layer on the rust prevention treatment layer. An amount of nickel attached in the heat resistance treatment layer is 30 to 60 mg/m2.

Abstract: A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ?T in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ?T?10° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.

Abstract: A silicon carbide ingot having micropipes in a seed crystal closed and being reduced in the gathering of screw dislocations, a method for manufacturing the silicon carbide ingot, and a method for manufacturing a silicon carbide wafer are provided. The silicon carbide ingot comprises: a seed crystal composed of a silicon carbide single crystal and having micropipes being hollow defects; a buffer layer provided on the seed crystal and composed of silicon carbide; and a bulk crystal growth layer provided on the buffer layer and composed of silicon carbide. The buffer layer and the bulk crystal growth layer have a plurality of screw dislocations continuous with the micropipes closed with the buffer layer, and the plurality of screw dislocations having the micropipe in common in the bulk crystal growth layer are 150 ?m or more apart from each other.

Abstract: Provided are: a method for producing a nasal drop composition suitable for treatment or prevention of a disease or symptom in the nasal cavities; and a nasal drop composition produced by the production method. The nasal drop composition production method characterized by including a mixing step of mixing earthworm castings with water and a collecting step of collecting vaporized water generated from a mixture obtained in the mixing step to obtain a liquid; and the nasal drop composition produced by the production method. It is preferred to further mix an organic substance together with the earthworm castings and the water in the mixing step.