Abstract: The present disclosure relates to a semiconductor device including: a first main terminal that is provided with a first potential; a second main terminal that is provided with a second potential lower than the first potential; a control terminal that is connected to an overcurrent detection circuit provided externally; at least one semiconductor element that includes a MOS transistor connected between the first main terminal and the second main terminal; and at least one diode that has a cathode electrically connected to the first main terminal and an anode electrically connected to the control terminal and protects the overcurrent detection circuit, wherein the at least one semiconductor element is mounted on a conductor plate, and the at least one semiconductor element and the at least one diode are sealed with an insulating resin.

Abstract: A control system is configured to control movement of a mobile object that is configured to be conveyed by unmanned driving at least in a manufacturing process, and the control system includes: a stop position identification section configured to identify a stop position at which the mobile object is stopped on a conveying part of a conveyance apparatus including the conveying part configured to convey the mobile object; and a control command section configured to generate and output a control command to cause the mobile object to enter the conveying part according to the stop position.

Abstract: A supply system for supplying ozone to an engine includes an electrolysis part that electrolyzes water to generate hydrogen and oxygen, a first supply part that supplies hydrogen generated by the electrolysis part to an intake pipe of the engine, an ozone generation part that generates ozone from oxygen generated by the electrolysis part, and a second supply part that supplies ozone generated by the ozone generation part to the intake pipe.

Abstract: In a control device, a phase corrector corrects an error in a phase of an AC power supply detected by a phase detector. A current coordinate transformer transforms detected values of three-phase currents of a converter into dq-axes currents using the corrected phase. A current controller calculates a voltage command so that current commands of the converter and the dq-axes currents match each other. A voltage coordinate transformer transforms the voltage command into three-phase voltage commands using the corrected phase. An estimator estimates an inductance of a reactor using the voltage commands and the dq-axes currents. The phase corrector corrects a phase detection error using the voltage commands, the dq-axes currents, and an impedance of the reactor. The current controller updates a current control gain using the inductance estimated by the estimator.

Abstract: A device includes: a determination unit configured to determine whether a vehicle is on a conveyor, the vehicle being configured to travel by unmanned driving; a conveyance velocity acquisition unit configured to acquire a conveyance velocity of the conveyor; and a decision unit configured to decide a target vehicle velocity of the vehicle based on the acquired conveyance velocity, when the determination unit determines that the vehicle is on the conveyor.

Abstract: A terminal receives a slide operation of an image displayed on a display from a first position to a second position and when a finger is held in the second position without being released from the display for a certain period of time, receives an operation for a specific process.

Abstract: A device includes: a vehicle velocity acquisition unit configured to acquire a vehicle velocity of a vehicle capable of traveling by unmanned driving; a conveyance velocity acquisition unit configured to acquire a conveyance velocity of a conveyor which the vehicle is on; and an estimation unit configured to estimate a position of the vehicle using the acquired vehicle velocity and the acquired conveyance velocity.

Abstract: A method and an apparatus for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot, obtaining a silicon carbide single crystal reduced in defects such as threading dislocations, are provided. The method manufactures a silicon carbide single crystal by supplying a raw material gas into a reaction vessel with a seed substrate, and heats the interior to grow a silicon carbide single crystal on the surface of the seed substrate. The method includes growing the silicon carbide single crystal on the seed substrate surface, while controlling the temperature, to perform pair annihilation of threading dislocations or synthesis of the threading dislocations; and a second step of maintaining the temperature inside the reaction vessel in the state of the first predetermined temperature after execution of the first step, to bring the leading ends of the threading dislocations close to the surface of the seed substrate.

Abstract: A purification system for purifying exhaust gas from an engine includes a separation part that separates oxygen and nitrogen contained in air, an ozone generation part that generates ozone from oxygen separated by the separation part, and a supply part that supplies ozone generated by the ozone generation part to an intake pipe and an exhaust pipe of the engine. The purification system includes a supply control device that adjusts an amount of ozone supplied to the intake pipe and an amount of ozone supplied to the exhaust pipe according to a purification rate of exhaust gas of the engine.

Abstract: A control device for a vehicle includes an external force information acquisition unit configured to acquire external force information on external force acting on a vehicle that is an autonomous vehicle, an external force determination unit configured to determine a kind of the external force by using the external force information, and a traveling control signal generation unit configured to generate a traveling control signal for the vehicle in accordance with the kind of the external force.

Abstract: In a silicon carbide single crystal wafer, a dislocation density contained therein is 3500 dislocations/cm2 or less, and a difference of the dislocation density among a wafer central part, a wafer peripheral part and a wafer intermediate part is less than 50% of an average value thereof.

Abstract: Provided are a semiconductor device and an inverter device with a decrease in yield being suppressed by preventing the adhesive from leaking into the inside of the semiconductor device. A heat sink, a wiring board provided on the heat sink, a semiconductor chip provided on the wiring board, a case housing provided on the heat sink so as to surround the wiring board and the semiconductor chip, an adhesive that adheres a lower surface joint portion of the case housing and an upper surface joint portion of the heat sink, a sealing material that fills the case housing and covers the wiring board and the semiconductor chip, and a convex portion provided on the lower surface joint portion of the case housing or the upper surface joint portion of the heat sink, that separates the adhesive from the sealing material are included.

Abstract: A colored fiber excellent in heat generation suppression property and fastness is provided. A method for manufacturing a colored fiber, and a fiber product is also provided. The colored fiber includes a fiber and a compound expressed by Formula (1) below.

Abstract: The semiconductor device includes a semiconductor chip that has a first principal surface, a withstand-voltage holding structure in a peripheral region in the first principal surface, a plurality of first conductive layers that are formed in the first principal surface, a second conductive layer overlaps with a space between the plurality of mutually adjacent first conductive layers in a plan view, and a protective layer that covers the plurality of first conductive layers and the second conductive layer.

Abstract: An object is to provide a SiC wafer in which a detection rate of an optical sensor can improved and a SiC wafer manufacturing method. The method includes: a satin finishing process S141 of satin-finishing at least a back surface 22 of a SiC wafer 20; an etching process 21 of etching at least the back surface 22 of the SiC wafer 20 by heating under Si vapor pressure after the satin finishing process S141; and a mirror surface processing process S31 of mirror-processing a main surface 21 of the SiC wafer 20 after the etching process S21. Accordingly, it is possible to obtain a SiC wafer having the mirror-finished main surface 21 and the satin-finished back surface 22.

Abstract: A silicon carbide single crystal includes a region in which a change of a specific resistance is repeated in a growth direction of the silicon carbide single crystal, and the change of the specific resistance is a gradual increase and decrease of the specific resistance. A changing range of the specific resistance may be within a range from 0.5% to 50% inclusive. A changing period of the gradual increase and decrease of the specific resistance that is repeated may be 500 ?m or less in terms of a length of the silicon carbide single crystal.

Abstract: A supply system for supplying ozone to an engine includes an electrolysis part that electrolyzes water to generate hydrogen and oxygen, a first supply part that supplies hydrogen generated by the electrolysis part to an intake pipe of the engine, an ozone generation part that generates ozone from oxygen generated by the electrolysis part, and a second supply part that supplies ozone generated by the ozone generation part to the intake pipe.

Abstract: A purification system for purifying exhaust gas from an engine includes a separation part that separates oxygen and nitrogen contained in air, an ozone generation part that generates ozone from oxygen separated by the separation part, and a supply part that supplies ozone generated by the ozone generation part to an intake pipe and an exhaust pipe of the engine. The purification system includes a supply control device that adjusts an amount of ozone supplied to the intake pipe and an amount of ozone supplied to the exhaust pipe according to a purification rate of exhaust gas of the engine.

Abstract: A raw material gas is supplied to a space in which a silicon carbide seed crystal is placed. A silicon carbide single crystal is grown on the seed crystal by keeping a monosilane partial pressure at 4 kPa or more and heating the space to a temperature of 2400° C. to 2700° C. The temperature of the space and supply of the raw material gas are controlled such that a temperature gradient of a growth crystal surface of the silicon carbide single crystal in a radial direction is 0.1° C./mm or less, and a radius of curvature of the growth crystal surface is 4.5 m or more, thereby producing a silicon carbide single crystal ingot having a growth length of 3 mm or more and an internal stress of 10 MPa or less. The ingot is then cut into a silicon carbide single crystal wafer.

Abstract: A surface-treated copper foil includes, on at least one surface of an untreated copper foil, a finely roughened layer formed of copper particles in which primary particles have a particle size of 10 nm to 110 nm or less, and a heat-resistant-treatment layer containing nickel and phosphorus, wherein a treated surface has a surface area ratio of 5.1 or more per 1 m2 of a two-dimensional area, the surface area ratio being calculated from a specific surface area measured by a krypton gas adsorption BET method, and a coating mass of the nickel is 2 mg or more per 1 m2 of a surface area.