Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

Abstract: A reflective mask blank 10 for EUV lithography in which a multi-layer reflection film 2 that reflects EUV light and an absorption layer 3 that absorbs EUV light are laminated on a substrate 1 in the stated order from the substrate 1 side, wherein the absorption layer 3 has a refractive index of less than 0.94 and an extinction coefficient of 0.060 or less for EUV light having a wavelength of 13.5 nm, and a phase difference between reflected light from a surface of the multi-layer reflection film and reflected light from a surface of the absorption layer with respect to an incident ray of the EUV light having a wavelength of 13.5 nm is 220 to 320°, and a reflective mask in which a mask pattern is formed on the absorption layer 3.

Abstract: A reflective mask blank 10 for EUV lithography in which a multi-layer reflection film 2 that reflects EUV light and an absorption layer 3 that absorbs EUV light are laminated on a substrate 1 in the stated order from the substrate 1 side, wherein the absorption layer 3 has a refractive index of 0.930 or less and an extinction coefficient of 0.025 or more for EUV light having a wavelength of 13.5 nm, and a phase difference between reflected light from a surface of the multi-layer reflection film and reflected light from a surface of the absorption layer with respect to an incident ray of the EUV light having a wavelength of 13.5 nm is 220 to 280°, and a reflective mask in which a mask pattern is formed on the absorption layer 3.

Abstract: A reflective mask blank, which is a binary reflective mask blank, includes, in order: a substrate; a multilayer reflective film configured to reflect EUV light; and a pattern film. The pattern film has a laminated structure including a total of L layers each having a different refractive index where L is a natural number of 2 or more. When an absorption coefficient of an i-th layer in the pattern film from a side opposite to the substrate is defined as ki, a thickness of the i-th layer in the pattern film from the side opposite to the substrate is defined as di (nm), a total thickness of the pattern film is defined as d, an exposure wavelength is defined as ? (nm), and Pi is defined as 1?exp(?2?/?*diki), the following formula (1) is satisfied. ? i = 1 L ( P i / d ) > 0.

Abstract: A reflective mask blank for EUV lithography, the reflective mask blank including: a substrate; a multilayer reflective film configured to reflect EUV light; and an absorption layer configured to absorb EUV light, in this order from a substrate side, in which the absorption layer includes a first absorption film and a second absorption film in this order from the substrate side, the absorption layer has a refractive index for EUV light having a wavelength of 13.5 nm of 0.95 or less, and the first absorption film is more easily chemically dry etched than the second absorption film.

Abstract: A reflective mask blank, which is a binary reflective mask blank, includes, in order: a substrate; a multilayer reflective film configured to reflect EUV light; and a pattern film. The pattern film has a laminated structure including a total of L layers each having a different refractive index where L is a natural number of 2 or more. When an absorption coefficient of an i-th layer in the pattern film from a side opposite to the substrate is defined as ki, a thickness of the i-th layer in the pattern film from the side opposite to the substrate is defined as di (nm), a total thickness of the pattern film is defined as d, an exposure wavelength is defined as ? (nm), and Pi is defined as 1?exp(?2?/?*diki), the following formula (1) is satisfied. ? i = 1 L ( Pi / d ) > 0.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.