Abstract: An element body has a substantially rectangular parallelepiped shape whose length in a longitudinal direction and length in a width direction are larger than a length in a height direction. The element body has first and second principal faces opposed to each other in the height direction, first and second side faces opposed to each other in the width direction, and third and fourth side faces opposed to each other in the longitudinal direction. A plurality of internal electrodes are alternately arranged in the element body so as to be opposed to each other in the height direction. Each internal electrode has a main electrode portion and a leading portion. Each of a plurality of terminal electrodes has a first electrode portion arranged on the first principal face, and a second electrode portion arranged on the first side face and connected to the leading portion of each corresponding internal electrode.

Abstract: An element body has a substantially rectangular parallelepiped shape whose length in a longitudinal direction and length in a width direction are larger than a length in a height direction. The element body has first and second principal faces opposed to each other in the height direction, first and second side faces opposed to each other in the width direction, and third and fourth side faces opposed to each other in the longitudinal direction. A plurality of internal electrodes are alternately arranged in the element body so as to be opposed to each other in the height direction. Each internal electrode has a main electrode portion and a leading portion. Each of a plurality of terminal electrodes has a first electrode portion arranged on the first principal face, and a second electrode portion arranged on the first side face and connected to the leading portion of each corresponding internal electrode.

Abstract: An annealing method for a GaAs wafer which uses incoherent light, e.g., infrared light generated from tungsten lamp, halogen lamp, etc. and a GaAs guard ring which surrounds the GaAs wafer. The thickness of the guard ring is 1.5 times more than that of the GaAs wafer, the internal diameter of the guard ring is less than diameter of GaAs wafer plus 3 mm and the width of the guard ring is less than 10 mm.

Abstract: A junction-type FET comprising a semiconductor substrate 21 of a first conductivity type, and island region 22 of a second conductivity type which comprises a channel region and is selectively formed in the semiconductor substrate 21, and a buried isolating region 27 which is selected from the group consisting of an intrinsic layer, a low impurity concentration layer of the second conductivity type and a layer of first conductivity type, the buried isolating layer being formed by ion implantation of impurities of the first conductivity type in the island region 22 while keeping the impurity concentration at the surface thereof relatively high, and the buried isolating layer substantially isolating the channel region from the surface.