Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.

Abstract: A thermal treatment apparatus including a hot plate which heats a substrate mounted thereon, in a treatment chamber including a lid body covering a surface to be treated of the substrate mounted on the hot plate, the thermal treatment apparatus includes: a control unit which controls at least a temperature of the hot plate, and a temperature measuring unit which measures a temperature of the lid body, wherein the control unit is configured to perform, when a set temperature of the hot plate is changed, correction of a heating amount by the hot plate for obtaining the set temperature after change, based on the temperature of the lid body measured by the temperature measuring unit.

Abstract: Time periods required for a wafer W to reach a reference temperature are made to be uniform between heating modules 2 and between heating target regions in a temperature rising time period after the wafer W is placed on a heating plate 23, and temperature rise curves of temperature transition profiles in a temperature rise transition time period are made to be same. Therefore, the temperature transition profiles of the heating target regions are all same, and total heat amounts in the temperature rise transition time period are uniform within a surface of the wafer W and between the heating modules 2, so that a line width of a pattern formed on the wafer W becomes uniform. Thus, it is possible to perform a heating treatment with high uniformity within the surface of the wafer W and between the wafers W processed in the different heating modules 2.

Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.

Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.

Abstract: Time periods required for a wafer W to reach a reference temperature are made to be uniform between heating modules 2 and between heating target regions in a temperature rising time period after the wafer W is placed on a heating plate 23, and temperature rise curves of temperature transition profiles in a temperature rise transition time period are made to be same. Therefore, the temperature transition profiles of the heating target regions are all same, and total heat amounts in the temperature rise transition time period are uniform within a surface of the wafer W and between the heating modules 2, so that a line width of a pattern formed on the wafer W becomes uniform. Thus, it is possible to perform a heating treatment with high uniformity within the surface of the wafer W and between the wafers W processed in the different heating modules 2.

Abstract: A thermal treatment apparatus including a hot plate which heats a substrate mounted thereon, in a treatment chamber including a lid body covering a surface to be treated of the substrate mounted on the hot plate, the thermal treatment apparatus includes: a control unit which controls at least a temperature of the hot plate, and a temperature measuring unit which measures a temperature of the lid body, wherein the control unit is configured to perform, when a set temperature of the hot plate is changed, correction of a heating amount by the hot plate for obtaining the set temperature after change, based on the temperature of the lid body measured by the temperature measuring unit.

Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.