Patents by Inventor Takeshi Sasami
Takeshi Sasami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230305398Abstract: The present invention is a resist composition, including: a resin (A) having: a repeating unit represented by the general formula (p-1); a repeating unit represented by the general formula (a-1); and a repeating unit represented by the general formula (b-1); a resin (B) having: a repeating unit represented by the general formula (p-2); a repeating unit represented by the general formula (a-1); and a repeating unit represented by the general formula (b-1); and a solvent (D), wherein a content of the resin (A) contained in the resist composition is smaller than a content of the resin (B). This provides a resist composition that reduces roughness and size uniformity of a hole pattern with high resolution exceeding that of conventional resist materials even with a high exposure-dose region, that has good pattern shape after exposure, and that has excellent etching resistance.Type: ApplicationFiled: March 24, 2023Publication date: September 28, 2023Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeshi SASAMI, Masayoshi SAGEHASHI, Kenji YAMADA
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Patent number: 11609497Abstract: The present invention is a resist composition comprises a polymer compound having one or two repeating units selected from repeating units represented by the following general formulae (p-1), (p-2) and (p-3), a repeating unit represented by the following formula (a-1) and the formula (a-2) polarities of which are changed by an action of an acid, and a repeating unit represented by the following formula (b-1); a salt represented by the following general formula (B); and a solvent, wherein a difference of a C log P of the repeating unit (a-1) before and after changing the polarity is 3.0 to 4.5, and a difference of a C log P of the repeating unit (a-2) before and after changing the polarity is 2.5 to 3.2. This provides a resist composition which has high sensitivity, wide DOF and high resolution, reduces LER, LWR and CDU, and has good pattern shape after exposure and excellent etching resistance.Type: GrantFiled: December 30, 2019Date of Patent: March 21, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeshi Sasami, Kenji Yamada, Jun Hatakeyama, Satoshi Watanabe
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Patent number: 11327400Abstract: A pattern having a good balance of sensitivity, resolution and LWR is formed by providing a resist film comprising a base resin comprising recurring units having a C4-C6 tertiary alkoxy or alkoxycarbonyl group as an acid labile group and recurring units capable of generating a backbone-bound acid upon exposure, exposing the resist film to radiation, optionally post-exposure baking the resist film at a low temperature of 30-70° C., and developing the film.Type: GrantFiled: November 19, 2018Date of Patent: May 10, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Takeshi Sasami, Tomohiro Kobayashi
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Patent number: 11163232Abstract: A resist composition comprising a base resin comprising recurring units having an acid labile group, and a metal salt of sulfonic acid exhibits a high sensitivity and high resolution, and forms a pattern of satisfactory profile with minimal LWR or improved CDU when processed by lithography.Type: GrantFiled: October 16, 2018Date of Patent: November 2, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Takeshi Sasami, Masaki Ohashi
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Patent number: 11156916Abstract: A resist composition comprising a base polymer and a compound containing an iodized benzene ring and an aromatic ring-containing group having a phenolic hydroxyl group is improved in sensitivity, LWR and CDU.Type: GrantFiled: April 18, 2019Date of Patent: October 26, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Takeshi Sasami
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Publication number: 20200218154Abstract: The present invention is a resist composition comprises a polymer compound having one or two repeating units selected from repeating units represented by the following general formulae (p-1), (p-2) and (p-3), a repeating unit represented by the following formula (a-1) and the formula (a-2) polarities of which are changed by an action of an acid, and a repeating unit represented by the following formula (b-1); a salt represented by the following general formula (B); and a solvent, wherein a difference of a C log P of the repeating unit (a-1) before and after changing the polarity is 3.0 to 4.5, and a difference of a C log P of the repeating unit (a-2) before and after changing the polarity is 2.5 to 3.2. This provides a resist composition which has high sensitivity, wide DOF and high resolution, reduces LER, LWR and CDU, and has good pattern shape after exposure and excellent etching resistance.Type: ApplicationFiled: December 30, 2019Publication date: July 9, 2020Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeshi SASAMI, Kenji YAMADA, Jun HATAKEYAMA, Satoshi WATANABE
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Patent number: 10520809Abstract: A resist composition comprising a base polymer and a metal salt of an iodinated aromatic group-containing carboxylic acid, the metal being selected from among sodium, magnesium, potassium, calcium, rubidium, strontium, cesium, barium, cobalt, nickel, copper, zinc, cadmium, tin, antimony, zirconium, hafnium, cerium, aluminum, and indium, exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.Type: GrantFiled: September 11, 2017Date of Patent: December 31, 2019Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Masaki Ohashi, Takeshi Sasami
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Patent number: 10474030Abstract: A resist composition comprising a base polymer and a metal salt of carboxylic acid or sulfonamide is provided, the metal being selected from calcium, strontium, barium, cerium, aluminum, indium, gallium, thallium scandium, and yttrium. The resist composition exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.Type: GrantFiled: October 5, 2017Date of Patent: November 12, 2019Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Masaki Ohashi, Takeshi Sasami
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Publication number: 20190324368Abstract: A resist composition comprising a base polymer and a compound containing an iodized benzene ring and an aromatic ring-containing group having a phenolic hydroxyl group is improved in sensitivity, LWR and CDU.Type: ApplicationFiled: April 18, 2019Publication date: October 24, 2019Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Takeshi Sasami
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Publication number: 20190163065Abstract: A pattern having a good balance of sensitivity, resolution and LWR is formed by providing a resist film comprising a base resin comprising recurring units having a C4-C6 tertiary alkoxy or alkoxycarbonyl group as an acid labile group and recurring units capable of generating a backbone-bound acid upon exposure, exposing the resist film to radiation, optionally post-exposure baking the resist film at a low temperature of 30-70° C., and developing the film.Type: ApplicationFiled: November 19, 2018Publication date: May 30, 2019Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Takeshi Sasami, Tomohiro Kobayashi
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Publication number: 20190113846Abstract: A resist composition comprising a base resin comprising recurring units having an acid labile group, and a metal salt of sulfonic acid exhibits a high sensitivity and high resolution, and forms a pattern of satisfactory profile with minimal LWR or improved CDU when processed by lithography.Type: ApplicationFiled: October 16, 2018Publication date: April 18, 2019Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Takeshi Sasami, Masaki Ohashi
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Patent number: 10078264Abstract: A resist composition comprising a base resin comprising acid labile group-containing recurring units and preferably acid generator-containing recurring units, and a sodium, magnesium, potassium, calcium, rubidium, strontium, yttrium, cesium, barium or cerium salt of ?-fluorinated sulfonic acid bonded to an alkyl, alkenyl, alkynyl or aryl group exhibits a high resolution and sensitivity and forms a pattern of satisfactory profile with minimal LWR after exposure and development.Type: GrantFiled: October 21, 2016Date of Patent: September 18, 2018Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Takeshi Sasami, Masaki Ohashi
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Publication number: 20180101094Abstract: A resist composition comprising a base polymer and a metal salt of carboxylic acid or sulfonamide is provided, the metal being selected from calcium, strontium, barium, cerium, aluminum, indium, gallium, thallium scandium, and yttrium. The resist composition exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.Type: ApplicationFiled: October 5, 2017Publication date: April 12, 2018Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Masaki Ohashi, Takeshi Sasami
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Publication number: 20180088463Abstract: A resist composition comprising a base polymer and a metal salt of an iodinated aromatic group-containing carboxylic acid, the metal being selected from among sodium, magnesium, potassium, calcium, rubidium, strontium, cesium, barium, cobalt, nickel, copper, zinc, cadmium, tin, antimony, zirconium, hafnium, cerium, aluminum, and indium, exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.Type: ApplicationFiled: September 11, 2017Publication date: March 29, 2018Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Masaki Ohashi, Takeshi Sasami
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Patent number: 9261783Abstract: A fluorinated ester monomer is provided having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 are H or a monovalent hydrocarbon group, or R2 and R3 forms a hydrocarbon ring, R4 is a monovalent hydrocarbon group, and k is 0 or 1. A polymer obtained from the monomer has transparency to radiation with a wavelength of up to 200 nm and appropriate alkaline hydrolysis, is constructed such that any of water repellency, water slip and surface segregation may be adjusted by a choice of its structure, and is useful in forming ArF immersion lithography materials.Type: GrantFiled: October 23, 2013Date of Patent: February 16, 2016Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeshi Kinsho, Yuuki Suka, Yuji Harada, Koji Hasegawa, Takeshi Sasami
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Publication number: 20150268555Abstract: The present invention provides a positive resist composition comprising: (A) a resin having repeating units represented by the following general formula (1) and the following general formula (2) as repeating units containing an acid-labile group, and an alkali solubility of which being increased by an acid, (B) a photoacid generator, (C) a compound represented by the following general formula (3), and (D) a solvent. There can be provided a positive resist composition which can provide a pattern excellent in resolution, in particular excellent in depth of focus (DOF) characteristics, and having good line width roughness (LWR).Type: ApplicationFiled: February 13, 2015Publication date: September 24, 2015Inventors: Kenji FUNATSU, Akihiro SEKI, Takeshi SASAMI
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Patent number: 9115074Abstract: A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or a monovalent hydrocarbon group, R4 to R6 each are a monovalent fluorinated hydrocarbon group, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.Type: GrantFiled: December 27, 2013Date of Patent: August 25, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masayoshi Sagehashi, Koji Hasegawa, Takeshi Sasami
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Patent number: 8916331Abstract: A polymer having a partial structure —C(CF3)2OH in recurring units is used as an additive to formulate a resist composition. A photoresist film formed from the resist composition has sufficient barrier performance against water to prevent any resist components from being leached in water and thus minimize any change of pattern profile.Type: GrantFiled: December 13, 2011Date of Patent: December 23, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Koji Hasegawa, Takeshi Sasami, Yuji Harada, Taku Morisawa
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Patent number: 8815492Abstract: A chemically amplified positive resist composition comprising (A) a triarylsulfonium salt of 2,3,3,3-tetrafluoro-2-(1,1,2,2,3,3,3-heptafluoropropoxy)propionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.Type: GrantFiled: September 14, 2012Date of Patent: August 26, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Youichi Ohsawa, Masaki Ohashi, Takeshi Sasami, Jun Hatakeyama
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Publication number: 20140114080Abstract: A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or a monovalent hydrocarbon group, R4 to R6 each are a monovalent fluorinated hydrocarbon group, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.Type: ApplicationFiled: December 27, 2013Publication date: April 24, 2014Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masayoshi SAGEHASHI, Koji HASEGAWA, Takeshi SASAMI