Patents by Inventor Takeshi Sasami

Takeshi Sasami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190163065
    Abstract: A pattern having a good balance of sensitivity, resolution and LWR is formed by providing a resist film comprising a base resin comprising recurring units having a C4-C6 tertiary alkoxy or alkoxycarbonyl group as an acid labile group and recurring units capable of generating a backbone-bound acid upon exposure, exposing the resist film to radiation, optionally post-exposure baking the resist film at a low temperature of 30-70° C., and developing the film.
    Type: Application
    Filed: November 19, 2018
    Publication date: May 30, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Takeshi Sasami, Tomohiro Kobayashi
  • Publication number: 20190113846
    Abstract: A resist composition comprising a base resin comprising recurring units having an acid labile group, and a metal salt of sulfonic acid exhibits a high sensitivity and high resolution, and forms a pattern of satisfactory profile with minimal LWR or improved CDU when processed by lithography.
    Type: Application
    Filed: October 16, 2018
    Publication date: April 18, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Takeshi Sasami, Masaki Ohashi
  • Patent number: 10078264
    Abstract: A resist composition comprising a base resin comprising acid labile group-containing recurring units and preferably acid generator-containing recurring units, and a sodium, magnesium, potassium, calcium, rubidium, strontium, yttrium, cesium, barium or cerium salt of ?-fluorinated sulfonic acid bonded to an alkyl, alkenyl, alkynyl or aryl group exhibits a high resolution and sensitivity and forms a pattern of satisfactory profile with minimal LWR after exposure and development.
    Type: Grant
    Filed: October 21, 2016
    Date of Patent: September 18, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Takeshi Sasami, Masaki Ohashi
  • Publication number: 20180101094
    Abstract: A resist composition comprising a base polymer and a metal salt of carboxylic acid or sulfonamide is provided, the metal being selected from calcium, strontium, barium, cerium, aluminum, indium, gallium, thallium scandium, and yttrium. The resist composition exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.
    Type: Application
    Filed: October 5, 2017
    Publication date: April 12, 2018
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Masaki Ohashi, Takeshi Sasami
  • Publication number: 20180088463
    Abstract: A resist composition comprising a base polymer and a metal salt of an iodinated aromatic group-containing carboxylic acid, the metal being selected from among sodium, magnesium, potassium, calcium, rubidium, strontium, cesium, barium, cobalt, nickel, copper, zinc, cadmium, tin, antimony, zirconium, hafnium, cerium, aluminum, and indium, exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.
    Type: Application
    Filed: September 11, 2017
    Publication date: March 29, 2018
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Masaki Ohashi, Takeshi Sasami
  • Patent number: 9261783
    Abstract: A fluorinated ester monomer is provided having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 are H or a monovalent hydrocarbon group, or R2 and R3 forms a hydrocarbon ring, R4 is a monovalent hydrocarbon group, and k is 0 or 1. A polymer obtained from the monomer has transparency to radiation with a wavelength of up to 200 nm and appropriate alkaline hydrolysis, is constructed such that any of water repellency, water slip and surface segregation may be adjusted by a choice of its structure, and is useful in forming ArF immersion lithography materials.
    Type: Grant
    Filed: October 23, 2013
    Date of Patent: February 16, 2016
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takeshi Kinsho, Yuuki Suka, Yuji Harada, Koji Hasegawa, Takeshi Sasami
  • Publication number: 20150268555
    Abstract: The present invention provides a positive resist composition comprising: (A) a resin having repeating units represented by the following general formula (1) and the following general formula (2) as repeating units containing an acid-labile group, and an alkali solubility of which being increased by an acid, (B) a photoacid generator, (C) a compound represented by the following general formula (3), and (D) a solvent. There can be provided a positive resist composition which can provide a pattern excellent in resolution, in particular excellent in depth of focus (DOF) characteristics, and having good line width roughness (LWR).
    Type: Application
    Filed: February 13, 2015
    Publication date: September 24, 2015
    Inventors: Kenji FUNATSU, Akihiro SEKI, Takeshi SASAMI
  • Patent number: 9115074
    Abstract: A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or a monovalent hydrocarbon group, R4 to R6 each are a monovalent fluorinated hydrocarbon group, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: August 25, 2015
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masayoshi Sagehashi, Koji Hasegawa, Takeshi Sasami
  • Patent number: 8916331
    Abstract: A polymer having a partial structure —C(CF3)2OH in recurring units is used as an additive to formulate a resist composition. A photoresist film formed from the resist composition has sufficient barrier performance against water to prevent any resist components from being leached in water and thus minimize any change of pattern profile.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: December 23, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Koji Hasegawa, Takeshi Sasami, Yuji Harada, Taku Morisawa
  • Patent number: 8815492
    Abstract: A chemically amplified positive resist composition comprising (A) a triarylsulfonium salt of 2,3,3,3-tetrafluoro-2-(1,1,2,2,3,3,3-heptafluoropropoxy)propionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: August 26, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Youichi Ohsawa, Masaki Ohashi, Takeshi Sasami, Jun Hatakeyama
  • Publication number: 20140114080
    Abstract: A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or a monovalent hydrocarbon group, R4 to R6 each are a monovalent fluorinated hydrocarbon group, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.
    Type: Application
    Filed: December 27, 2013
    Publication date: April 24, 2014
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masayoshi SAGEHASHI, Koji HASEGAWA, Takeshi SASAMI
  • Patent number: 8697903
    Abstract: A fluorinated ester monomer is provided having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 are H or a monovalent hydrocarbon group, or R2 and R3 forms a hydrocarbon ring, R4 is a monovalent hydrocarbon group, and k is 0 or 1. A polymer obtained from the monomer has transparency to radiation with a wavelength of up to 200 nm and appropriate alkaline hydrolysis, is constructed such that any of water repellency, water slip and surface segregation may be adjusted by a choice of its structure, and is useful in forming ArF immersion lithography materials.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: April 15, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takeshi Kinsho, Yuuki Suka, Yuji Harada, Koji Hasegawa, Takeshi Sasami
  • Publication number: 20140051024
    Abstract: A fluorinated ester monomer is provided having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 are H or a monovalent hydrocarbon group, or R2 and R3 forms a hydrocarbon ring, R4 is a monovalent hydrocarbon group, and k is 0 or 1. A polymer obtained from the monomer has transparency to radiation with a wavelength of up to 200 nm and appropriate alkaline hydrolysis, is constructed such that any of water repellency, water slip and surface segregation may be adjusted by a choice of its structure, and is useful in forming ArF immersion lithography materials.
    Type: Application
    Filed: October 23, 2013
    Publication date: February 20, 2014
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takeshi KINSHO, Yuuki SUKA, Yuji HARADA, Koji HASEGAWA, Takeshi SASAMI
  • Patent number: 8647808
    Abstract: A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or a monovalent hydrocarbon group, R4 to R6 each are a monovalent fluorinated hydrocarbon group, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.
    Type: Grant
    Filed: April 6, 2011
    Date of Patent: February 11, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masayoshi Sagehashi, Koji Hasegawa, Takeshi Sasami
  • Publication number: 20130108964
    Abstract: A chemically amplified positive resist composition comprising (A) a triarylsulfonium salt of 2,3,3,3-tetrafluoro-2-(1,1,2,2,3,3,3-heptafluoropropoxy)propionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.
    Type: Application
    Filed: September 14, 2012
    Publication date: May 2, 2013
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Youichi Ohsawa, Masaki Ohashi, Takeshi Sasami, Jun Hatakeyama
  • Patent number: 8420292
    Abstract: A polymer comprising recurring units of formula (1) and having a solubility in alkaline developer which increases under the action of an alkaline developer is provided. The polymer has transparency to radiation of up to 200 nm and improved water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer to formulate a resist composition. R1 is H, F, methyl, or trifluoromethyl, R2 is a monovalent fluorinated hydrocarbon group, An is a (n+1)-valent hydrocarbon or fluorinated hydrocarbon group, and n is 1, 2 or 3.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: April 16, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yuji Harada, Takeru Watanabe, Takeshi Sasami, Yuuki Suka, Koji Hasegawa
  • Publication number: 20130034813
    Abstract: A chemically amplified positive resist composition comprising (A) a sulfonium salt of 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The carboxylic acid sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.
    Type: Application
    Filed: July 26, 2012
    Publication date: February 7, 2013
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Youichi Ohsawa, Masayoshi Sagehashi, Koji Hasegawa, Takeshi Sasami
  • Publication number: 20120148945
    Abstract: A polymer having a partial structure —C(CF3)2OH in recurring units is used as an additive to formulate a resist composition. A photoresist film formed from the resist composition has sufficient barrier performance against water to prevent any resist components from being leached in water and thus minimize any change of pattern profile.
    Type: Application
    Filed: December 13, 2011
    Publication date: June 14, 2012
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Koji Hasegawa, Takeshi Sasami, Yuji Harada, Taku Morisawa
  • Publication number: 20120083580
    Abstract: A fluorinated ester monomer is provided having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 are H or a monovalent hydrocarbon group, or R2 and R3 forms a hydrocarbon ring, R4 is a monovalent hydrocarbon group, and k is 0 or 1. A polymer obtained from the monomer has transparency to radiation with a wavelength of up to 200 nm and appropriate alkaline hydrolysis, is constructed such that any of water repellency, water slip and surface segregation may be adjusted by a choice of its structure, and is useful in forming ArF immersion lithography materials.
    Type: Application
    Filed: September 22, 2011
    Publication date: April 5, 2012
    Inventors: Takeshi KINSHO, Yuuki Suka, Yuji Harada, Koji Hasegawa, Takeshi Sasami
  • Publication number: 20110250539
    Abstract: A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or a monovalent hydrocarbon group, R4 to R6 each are a monovalent fluorinated hydrocarbon group, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.
    Type: Application
    Filed: April 6, 2011
    Publication date: October 13, 2011
    Inventors: Masayoshi SAGEHASHI, Koji Hasegawa, Takeshi Sasami