Abstract: Provided is an electrically heated catalyst device capable of improving a purification performance when a temperature is increased by electric heating. The electrically heated catalyst device of the present disclosure includes a substrate, an inflow side catalyst layer, and an outflow side catalyst layer. The substrate contains SiC. The inflow side catalyst layer contains Pd. The outflow side catalyst layer contains Rh. The substrate includes a partition wall defining a plurality of cells extending from an inflow side end surface to an outflow side end surface. The inflow side catalyst layer is disposed on a surface of the partition wall in an inflow side catalyst region. The inflow side catalyst region extends from an inflow side end of the partition wall to an outflow side by a distance of more than 50% of a total length in the extending direction of the partition wall.

Abstract: Provided is an electrically heated catalyst device that enables improving an exhaust gas purification performance. The electrically heated catalyst device of the present disclosure includes a substrate, an inflow side catalyst layer, and an outflow side catalyst layer. The substrate contains SiC. The inflow side catalyst layer contains Pd as a catalyst component. The outflow side catalyst layer contains Rh as a catalyst component. The substrate includes a partition wall defining a plurality of cells extending from an inflow side end surface to an outflow side end surface. The inflow side catalyst layer is disposed on a surface of the partition wall in an inflow side catalyst region. The inflow side catalyst region extends from an inflow side end of the partition wall along an extending direction to an outflow side by a distance of 60% to 90% of a total length in the extending direction of the partition wall.

Abstract: A wall-flow type particulate filter includes: a wall-flow type base material; and a coat layer formed on the base material. The base material includes: an inlet cell open only at an exhaust gas inlet end; an outlet cell open only at an exhaust gas outlet end; and a partition partitioning the inlet and outlet cells and having multiple pores through which the inlet and outlet cells communicate with each other. The coat layer is provided for the wall surfaces of the pores and contains a first inorganic oxide and a second inorganic oxide. The mean particle diameter Da of the first inorganic oxide is larger than the mean particle diameter Db of the second inorganic oxide. The weight ratio of the second inorganic oxide is designed to be from 10% to 50% inclusive when the total weight ratio of the first inorganic oxide and the second inorganic oxide is 100%.

Abstract: A light-emitting element and an electronic apparatus capable of reducing the element area and realizing a stable electrical connection. A light-emitting element according to the present technology includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer laminated in this order, and a light-emitting surface, a non-light-emitting surface, and a side surface connecting the light-emitting surface and the non-light-emitting surface. The side surface is inclined. A first electrode is in a concave portion in the light-emitting surface at a periphery of the first semiconductor layer. A second electrode is on a non-light-emitting surface side of the laminate. A third electrode is on the non-light-emitting surface side of the laminate and is insulated from the second electrode. The side wiring electrically connects the first electrode and the third electrode via the side surface.

Abstract: A light-emitting element including: a stacked body; a light-emitting surface; and a reflecting body. The stacked body includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers, and has first and second surfaces on a side opposite to the active layer, and a circumferential surface that connects the first surface and the second surface and includes an end surface of the active layer, a groove formed in the first semiconductor layer from the first surface toward the active layer, having a depth such that the groove is separated from the active layer, and extending in a direction parallel to the first surface. The light-emitting surface is positioned on the first surface on a side opposite to the active layer and emits light generated in the active layer. The reflecting body reflects light emitted from the end surface toward the groove.

Abstract: A light-emitting element and an electronic apparatus capable of reducing the element area and realizing a stable electrical connection. A light-emitting element according to the present technology includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer laminated in this order, and a light-emitting surface, a non-light-emitting surface, and a side surface connecting the light-emitting surface and the non-light-emitting surface. The side surface is inclined. A first electrode is in a concave portion in the light-emitting surface at a periphery of the first semiconductor layer. A second electrode is on a non-light-emitting surface side of the laminate. A third electrode is on the non-light-emitting surface side of the laminate and is insulated from the second electrode. The side wiring electrically connects the first electrode and the third electrode via the side surface.

Abstract: A vehicle air-conditioner safety device includes a controller which, in a case in which an abnormality has occurred in a heating device that heats coolant with a heater, determines whether or not the abnormality is a restorable abnormality or a non-restorable abnormality. When the abnormality is determined to be the restorable abnormality, it is determined whether or not the restorable abnormality has been removed. Heating by the heater is prohibited when the restorable abnormality or the non-restorable abnormality has occurred. Heating by the heater is restored when the restorable abnormality has been removed after heating by the heater is prohibited due to occurrence of the restorable abnormality.

Abstract: A head up display unit can be provided in an inner portion of an instrument panel. A column bracket for mounting a steering column is at a lower portion of a vehicle body strength member and extends in a vehicle width direction in a vehicle rear side of a front wall panel of a vehicle interior. The head up display unit is mounted on the column bracket so as to be movable to a vehicle upward direction by an emergency input load from a vehicle front direction.

Abstract: A large-sized head up display unit can be reasonably provided in an inner portion of an instrument panel. A column bracket to mount a steering column (5) is provided at a lower portion of a vehicle body strength member (4) extending in a vehicle width direction disposed in a vehicle rear side of a front wall panel (1) of a vehicle interior. A head up display unit (21) is mounted on the column bracket to be movable to a vehicle upward direction by an emergency input load from a vehicle front direction.

Abstract: In a vehicle air-conditioner safety device, in the case in which an abnormality has occurred in a heating device that heats coolant with a heater: it is determined whether or not the abnormality is a restorable abnormality or a non-restorable abnormality; when the abnormality is determined to be the restorable abnormality, it is determined whether or not the restorable abnormality has been removed; heating by the heater is prohibited when the restorable abnormality or the non-restorable abnormality has occurred; and heating by the heater is restored when the restorable abnormality has been removed after heating by the heater is prohibited due to occurrence of the restorable abnormality.

Abstract: A thin-film transistor includes a gate electrode made of metal, a light transmissive gate insulating film that covers the gate electrode, a semiconductor film that overlaps with the gate electrode through the gate insulating film, and a source electrode and a drain electrode, made of metal, and spaced from each other. The gate electrode and the semiconductor film have respective through-holes communicated with each other so that the gate insulating film enters an inside of the through-holes. The gate insulating film has an area of the inside of the through-holes of the gate electrode and the semiconductor film. The source electrode and the drain electrode pass through the inside of the through-holes of the gate electrode and the semiconductor film so as to overlap with a part of the area of the inside of the through-hole of the gate insulating film and avoid a remaining portion thereof.

Abstract: An image display device having a display panel in which a first substrate and a second substrate are disposed to each other, in which the first substrate includes an insulating substrate composed of a resin, a circuit layer having a circuit where a plurality of Thin-film transistors are arranged in a matrix, and a polarizer disposed between the insulating substrate and the circuit layer, the insulating substrate has a thickness of 20 ?m or more and 150 ?m or less, a transmittance of 80% or more for a visible light at a wavelength of 400 nm or more and 800 nm or less, and a 3% weight reduction temperature of 300° C. or higher, and has no melting point or has a melting point of 300° C. or higher.

Abstract: An image display device having a display panel in which a first substrate and a second substrate are disposed to each other, in which the first substrate includes an insulating substrate composed of a resin, a circuit layer having a circuit where a plurality of Thin-film transistors are arranged in a matrix, and a polarizer disposed between the insulating substrate and the circuit layer, the insulating substrate has a thickness of 20 ?m or more and 150 ?m or less, a transmittance of 80% or more for a visible light at a wavelength of 400 nm or more and 800 nm or less, and a 3% weight reduction temperature of 300° C. or higher, and has no melting point or has a melting point of 300° C. or higher.

Abstract: To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

Abstract: In a multi-output type DC/DC converter, a controller controls, in accordance with first and second output voltages, turning on/off of a switch circuit and selection in an output selection circuit. The controller controls an ON time interval in each time slot of the switch circuit so as to always constant in a steady state without reference to weight of first and second loads.

Abstract: This invention provides a manufacturing method for fabricating on the same substrate both high voltage thin film transistors suitable for driving liquid crystal and low voltage drive high performance thin film transistors. In addition, this invention provides a thin film transistor substrate where the area occupied by a storage capacitor in each pixel is reduced to raise the aperture ratio of the display unit. One aspect of this invention provides a manufacturing method characterized in that the impurity regions of both high voltage thin film transistors and high performance thin film transistors which differ in the thickness of gate insulation are formed by implanting a dopant through the same two-layered film. Another aspect of this invention reduces the area occupied by the drive circuit in the display unit by utilizing an extension of one layer of the insulation film included in each thin film transistor.

Abstract: In a multi-output type DC/DC converter, a controller controls, in accordance with first and second output voltages, turning on/off of a switch circuit and selection in an output selection circuit. The controller controls an ON time interval in each time slot of the switch circuit so as to always constant in a steady state without reference to weight of first and second loads.

Abstract: In a multi-output type DC/DC converter, a controller controls, in accordance with first and second output voltages, turning on/off of a switch circuit and selection in an output selection circuit. The controller makes the multi-output type DC/DC converter operate at a current discontinuous mode when all of the first and the second loads are light. The controller makes the multi-output type DC/DC converter operate at a current continuous mode when all of the first and the second loads are heavy.

Abstract: To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

Abstract: To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.