Abstract: A wavelength-selective optical reception device includes a photoreceptor (21) that converts optical signals (201) into electric signals and outputs the electric signals, a base (31) on which the photoreceptor (21) is provided, a housing (41) that is mounted on the base (31) and surrounds the photoreceptor (21) along with the base (31), and that is provided with a window (51) to pass optical signals (203) including the optical signals (201) and including optical signals (202) of a wavelength different from a first wavelength of the optical signals (201) and a window (52) to pass the optical signals (202), and an optical filter (61) that is disposed inside the housing between the window (51) and the photoreceptor (21) along the optical axis (205) of the optical signals (203), and that outputs, out of the optical signals (203) that enter thereto, the optical signals (201) toward the photoreceptor (21), and reflects the optical signals (202) toward a near side in a direction of travel of the optical signals (203)

Abstract: An electromagnetic valve used in a fuel system, in which at least a portion of a member constituting an magnetic circuit in an electromagnetic drive unit includes 0.15-0.45 mass % (inclusive) Ni, 0.65-1.0 mass % (inclusive) Al, 9.2-10.3 mass % (inclusive) Cr, and 0.90-1.6 mass % (inclusive) Mo, and the remainder comprises an alloy material comprising Fe and unavoidable impurities. The alloy material may further include 0.05-0.15 mass % (inclusive) Pb.

Abstract: According to the present invention, there is provided an electromagnetic valve used in a fuel system, in which at least a portion of a member constituting an magnetic circuit in an electromagnetic drive unit includes 0.15-0.45 mass % (inclusive) Ni, 0.65-1.0 mass % (inclusive) Al, 9.2-10.3 mass % (inclusive) Cr, and 0.90-1.6 mass % (inclusive) Mo, and the remainder comprises an alloy material comprising Fe and unavoidable impurities. The alloy material may further include 0.05-0.15 mass % (inclusive) Pb.

Abstract: A method is for manufacturing a core plate having an annular core back and teeth extending from the core back toward the center. The core plate is obtained by performing a punching step, a winding step, a straining step and an annealing step. At the straining step, compressive strain is applied to the core back or the band-shaped core back that is to be the core back after winding. At the annealing step, the core back or the band-shaped core back is annealed to be recrystallized after the applying of strain.

Abstract: A method of propagation test on a battery system has: a main irradiation step of irradiating a laser beam in prescribed conditions, on a light-receiving part of the outer member of a light-receiving cell, or on a light-receiving part which is arranged in contact with the outer member of the light-receiving cell, thereby to heat the light-receiving cell; a thermal runaway confirming step of confirming a thermal runaway of the light-receiving cell; an irradiation stopping step of stopping the laser-beam irradiation after the thermal runaway was confirmed in the thermal runaway confirming step; and a system integrity inspection step of inspecting an integrity of the cells other than the light-receiving cell after the irradiation stopping step. The prescribed conditions are conditions in which a melted scar is formed on the light-receiving part.

Abstract: A method is for manufacturing a core plate having an annular core back and teeth extending from the core back toward the center. The core plate is obtained by performing a punching step, a winding step, a straining step and an annealing step. At the straining step, compressive strain is applied to the core back or the band-shaped core back that is to be the core back after winding. At the annealing step, the core back or the band-shaped core back is annealed to be recrystallized after the applying of strain.

Abstract: A method of propagation test on a battery system has: a main irradiation step of irradiating a laser beam in prescribed conditions, on a light-receiving part of the outer member of a light-receiving cell, or on a light-receiving part which is arranged in contact with the outer member of the light-receiving cell, thereby to heat the light-receiving cell; a thermal runaway confirming step of confirming a thermal runaway of the light-receiving cell; an irradiation stopping step of stopping the laser-beam irradiation after the thermal runaway was confirmed in the thermal runaway confirming step; and a system integrity inspection step of inspecting an integrity of the cells other than the light-receiving cell after the irradiation stopping step. The prescribed conditions are conditions in which a melted scar is formed on the light-receiving part.

Abstract: To provide a stacked piezoelectric device which is inexpensive and excellent in bonding strength between a piezoelectric layer and an internal electrode layer, the piezoelectric device comprises piezoelectric layers and internal electrode layers containing not less than 50 percent by weight of Cu stacked alternately. Between the internal electrode layer and the piezoelectric layer, there is a diffusion region formed by mutual diffusion of components of the internal electrode layer and the piezoelectric layer to the other layer and comprising at least one component of the piezoelectric material and Cu. The diffusion region occupies not less than 90 percent of area of interface between the internal electrode layer and the piezoelectric layer, and a thickness of the diffusion region is not more than 10 percent of a thickness of the internal electrode layer.

Abstract: A stacked piezoelectric device, which is inexpensive and excellent in electric transmission efficiency and little deterioration of strength of an internal electrode layer, is provided by having an internal electrode layer containing not less than 50 percent by weight of Cu element, and not more than 5 percent of a pore occurrence expressed by (B/A)×100 (%) wherein A is an area of an interface between the internal electrode layer and the piezoelectric layer and B is a sum of areas of pores which appear in the interface and have a diameter of not less than 0.1 micrometers. Preferably, a surface roughness Ra of the interface of the piezoelectric layer contacting the internal electrode layer is not more than 0.5 C (?m) wherein C is a thickness of the internal electrode layer in micrometers. The piezoelectric material constituting the piezoelectric layer preferably comprises PZT which is a Pb(Zr,Ti)O3-based oxide having a perovskite structure.

Abstract: To provide a stacked piezoelectric device which is inexpensive and excellent in bonding strength between a piezoelectric layer and an internal electrode layer, the piezoelectric device comprises piezoelectric layers and internal electrode layers containing not less than 50 percent by weight of Cu stacked alternately. Between the internal electrode layer and the piezoelectric layer, there is a diffusion region formed by mutual diffusion of components of the internal electrode layer and the piezoelectric layer to the other layer and comprising at least one component of the piezoelectric material and Cu. The diffusion region occupies not less than 90 percent of area of interface between the internal electrode layer and the piezoelectric layer, and a thickness of the diffusion region is not more than 10 percent of a thickness of the internal electrode layer.

Abstract: A stacked piezoelectric device, which is inexpensive and excellent in electric transmission efficiency and little deterioration of strength of an internal electrode layer, is provided by having an internal electrode layer containing not less than 50 percent by weight of Cu element, and not more than 5 percent of a pore occurrence expressed by (B/A)×100 (%) wherein A is an area of an interface between the internal electrode layer and the piezoelectric layer and B is a sum of areas of pores which appear in the interface and have a diameter of not less than 0.1 micrometers. Preferably, a surface roughness Ra of the interface of the piezoelectric layer contacting the internal electrode layer is not more than 0.5C (&mgr;m) wherein C is a thickness of the internal electrode layer in micrometers. The piezoelectric material constituting the piezoelectric layer preferably comprises PZT which is a Pb(Zr,Ti)O3-based oxide having a perovskite structure.