Patents by Inventor Takeshi Sunaoshi

Takeshi Sunaoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10784074
    Abstract: The invention is directed to a charged particle beam apparatus that enables temperature maintenance in a cooling unit provided inside a vacuum application apparatus using a refrigerant. The charged particle beam apparatus includes a cooling tank that contains a refrigerant for cooling a cooling unit, a cooling pipe that supplies the refrigerant from the cooling tank to the cooling unit, and a unit that leads the refrigerant to liquefy when the refrigerant is biased to a solid.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: September 22, 2020
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Takeshi Sunaoshi, Yoshihisa Orai, Haruhiko Hatano, Takashi Mizuo
  • Patent number: 10204761
    Abstract: Provided is an electron microscope with which a sample can be observed stably and with high accuracy. The electron microscope comprises: a sample stage; an electron optical system that scans an electron beam over a sample; a vacuum system that maintains the sample stage and the electron optical system in a vacuum; a secondary electron detector that detects secondary electrons emitted from the sample; transmitted electron detectors that detect transmitted electrons that have transmitted through the sample; and a control device that obtains a secondary electron image and a transmitted electron image on the basis of the secondary electrons and the transmitted electrons detected by the secondary electron detector and the transmitted electron detectors and stores the secondary electron image and the transmitted electron image. The sample stage is provided with cooling means for cooling the sample.
    Type: Grant
    Filed: October 9, 2014
    Date of Patent: February 12, 2019
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Takeshi Sunaoshi, Yasuhira Nagakubo, Kazutaka Nimura
  • Publication number: 20180350554
    Abstract: The invention is directed to a charged particle beam apparatus that enables temperature maintenance in a cooling unit provided inside a vacuum application apparatus using a refrigerant. The charged particle beam apparatus includes a cooling tank that contains a refrigerant for cooling a cooling unit, a cooling pipe that supplies the refrigerant from the cooling tank to the cooling unit, and a unit that leads the refrigerant to liquefy when the refrigerant is biased to a solid.
    Type: Application
    Filed: November 29, 2016
    Publication date: December 6, 2018
    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Takeshi SUNAOSHI, Yoshihisa ORAI, Haruhiko HATANO, Takashi MIZUO
  • Publication number: 20170221676
    Abstract: Provided is an electron microscope with which a sample can be observed stably and with high accuracy. The electron microscope comprises: a sample stage; an electron optical system that scans an electron beam over a sample; a vacuum system that maintains the sample stage and the electron optical system in a vacuum; a secondary electron detector that detects secondary electrons emitted from the sample; transmitted electron detectors that detect transmitted electrons that have transmitted through the sample; and a control device that obtains a secondary electron image and a transmitted electron image on the basis of the secondary electrons and the transmitted electrons detected by the secondary electron detector and the transmitted electron detectors and stores the secondary electron image and the transmitted electron image. The sample stage is provided with cooling means for cooling the sample.
    Type: Application
    Filed: October 9, 2014
    Publication date: August 3, 2017
    Applicant: Hitachi High-Technologies Corporation
    Inventors: Takeshi SUNAOSHI, Yasuhira NAGAKUBO, Kazutaka NIMURA
  • Patent number: 8067752
    Abstract: A semiconductor testing method capable of quickly counting semiconductor cells in which a seemingly horizontal or vertical line is drawn with a mouse, and raster rotation is performed in alignment with the closer axis. After that, the stage is horizontally moved, pattern matching is performed on an image on a position where the image should be disposed, and an angle is adjusted. The stage is moved evenly along the X-axis and the Y-axis, achieving a movement to a destination like a straight line. In synchronization with the smooth movement of the stage, a cell is surrounded in a rectangular frame by a ruler, and the number of cells is displayed with a numeric value.
    Type: Grant
    Filed: April 22, 2010
    Date of Patent: November 29, 2011
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Tohru Ando, Yasuhiko Nara, Tsutomu Saito, Shinichi Kato, Takeshi Sunaoshi
  • Patent number: 8040146
    Abstract: There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.
    Type: Grant
    Filed: January 25, 2010
    Date of Patent: October 18, 2011
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Takeshi Sunaoshi, Kouichi Kurosawa, Takeshi Sato, Masaaki Komori
  • Publication number: 20100200749
    Abstract: A semiconductor testing method capable of quickly counting semiconductor cells in which a seemingly horizontal or vertical line is drawn with a mouse, and raster rotation is performed in alignment with the closer axis. After that, the stage is horizontally moved, pattern matching is performed on an image on a position where the image should be disposed, and an angle is adjusted. The stage is moved evenly along the X-axis and the Y-axis, achieving a movement to a destination like a straight line. In synchronization with the smooth movement of the stage, a cell is surrounded in a rectangular frame by a ruler, and the number of cells is displayed with a numeric value.
    Type: Application
    Filed: April 22, 2010
    Publication date: August 12, 2010
    Applicant: Hitachi High-Technologies Corporation
    Inventors: Tohru ANDO, Yasuhiko Nara, Tsutomu Saito, Shinichi Kato, Takeshi Sunaoshi
  • Patent number: 7732791
    Abstract: A semiconductor testing method capable of quickly counting semiconductor cells in which a seemingly horizontal or vertical line is drawn with a mouse, and raster rotation is performed in alignment with the closer axis. After that, the stage is horizontally moved, pattern matching is performed on an image on a position where the image should be disposed, and an angle is adjusted. The stage is moved evenly along the X-axis and the Y-axis, achieving a movement to a destination like a straight line. In synchronization with the smooth movement of the stage, a cell is surrounded in a rectangular frame by a ruler, and the number of cells is displayed with a numeric value.
    Type: Grant
    Filed: August 6, 2007
    Date of Patent: June 8, 2010
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Tohru Ando, Yasuhiko Nara, Tsutomu Saito, Shinichi Kato, Takeshi Sunaoshi
  • Publication number: 20100123474
    Abstract: There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.
    Type: Application
    Filed: January 25, 2010
    Publication date: May 20, 2010
    Applicant: Hitachi High-Technologies Corporation
    Inventors: Takeshi Sunaoshi, Kouichi Kurosawa, Takeshi Sato, Masaaki Komori
  • Patent number: 7663390
    Abstract: There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.
    Type: Grant
    Filed: June 25, 2008
    Date of Patent: February 16, 2010
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Takeshi Sunaoshi, Kouichi Kurosawa, Takeshi Sato, Masaaki Komori
  • Publication number: 20090009203
    Abstract: There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.
    Type: Application
    Filed: June 25, 2008
    Publication date: January 8, 2009
    Inventors: Takeshi SUNAOSHI, Kouichi KUROSAWA, Takeshi SATO, Masaaki KOMORI
  • Publication number: 20080237462
    Abstract: A semiconductor testing method capable of quickly counting semiconductor cells with accuracy is achieved. Since an SEM is adjusted in a specific condition, the rotation axis of a stage and the axis of an optical system are deviated from each other in a different observation environment and a different adjustment environment. The deviation between the axes is easily adjusted in each observation environment, so that the deviation is reduced. A seemingly horizontal or vertical line is drawn with a mouse and raster rotation is performed in alignment with the closer axis. After that, the stage is horizontally moved, pattern matching is performed on an image on a position where the image should be disposed, and an angle is adjusted. The stage is moved evenly along the X-axis and the Y-axis, achieving a movement to a destination like a straight line.
    Type: Application
    Filed: August 6, 2007
    Publication date: October 2, 2008
    Applicant: Hitachi High-Technologies Corporation
    Inventors: Tohru ANDO, Yasuhiko Nara, Tsutomu Saito, Shinichi Kato, Takeshi Sunaoshi
  • Publication number: 20070161494
    Abstract: A non-oxide ceramics having improved performances and functions by forming a high-quality oxide film on the surface of a non-oxide ceramics such as aluminum nitride. The method for the formation of the non-oxide ceramics comprises the steps of: (1) providing a non-oxide ceramics; (2) introducing the non-oxide ceramics into a furnace and then regulating the atmosphere within the furnace so as to have an oxidizing gas content of not more than 0.5 mmol in terms of total number of moles of the oxidizing gas per m3 of the inside of the furnace; (3) heating the non-oxide ceramics to a temperature at or above a temperature, which is 300° C.
    Type: Application
    Filed: January 21, 2005
    Publication date: July 12, 2007
    Applicants: Tokuyama Corporation, The Circle for the Promotion of Science and Engineering
    Inventors: Hiroyuki Fukuyama, Takehiko Yoneda, Masao Ariyuki, Takeshi Sunaoshi, Hideki Sato