Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween, first to third control electrodes inside the semiconductor part, and first to third interconnects. The first and second control electrodes are arranged along a front surface of the semiconductor part. The third control electrodes are provided between the first electrode and the first and second electrodes, respectively. The first and second interconnect are electrically connected to the first and second control electrodes, respectively. The third interconnect is electrically connected to the third control electrodes. The semiconductor layer includes first and third layers of a first conductivity type and a second layer of a second conductivity type. The second layer is provided between the first layer and the second electrode. The third layer is provided between the second layer and the second electrode. The second layer faces the first and second control electrodes via insulating portions.

Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween, and first and second control electrodes in a trench of the semiconductor part. The first and second control electrodes are arranged along a front surface of the semiconductor part. The semiconductor part includes first and third layers of a first-conductivity-type, and the second and fourth layer of a second-conductivity-type. The second layer is provided between the first layer and the second electrode. Between the second layer and the second electrode, the third and fourth layers are provided apart from the first layer with first and second portions of the second layer interposed, respectively. The first portion of the second layer has a first thickness in a second direction from the first electrode toward the second electrode. The second portion of the second layer has a second thickness in the second direction larger than the first thickness.

Abstract: A semiconductor device includes a semiconductor part having a first surface and a second surface opposite to the first surface, a first electrode on the first surface, a second electrode on the second surface, first to third control electrodes between the first electrode and the semiconductor part. The first to third control electrodes are biased independently from each other. The semiconductor part includes a first layer of a first-conductivity-type, a second layer of a second-conductivity-type, a third layer of the first-conductivity-type and the fourth layer of the second-conductivity-type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The second layer opposes the first to third control electrode with insulating films interposed.

Abstract: A semiconductor device includes a semiconductor part, a first electrode at a back surface of the semiconductor part; a second electrode at a front surface of the semiconductor part; third and fourth electrodes provided between the semiconductor part and the second electrode. The third and fourth electrodes are arranged in a first direction along the front surface of the semiconductor part. The third electrode is electrically insulated from the semiconductor part by a first insulating film. The third electrode is electrically insulated from the second electrode by a second insulating film. The fourth electrode is electrically insulated from the semiconductor part by a third insulating film. The fourth electrode is electrically isolated from the third electrode. the third and fourth electrodes extend into the semiconductor part. The fourth electrode includes a material having a larger thermal conductivity than a thermal conductivity of a material of the third electrode.

Abstract: A polyester resin composition containing 100 parts by mass of a polyester resin and 0.01 to 10 parts by mass of a 2-amino-1,3,5-triazine derivative of Formula [1]: a polyester resin molded body obtained by the composition, and a crystal nucleating agent including the triazine derivative. A polyester resin composition containing a crystal nucleating agent that makes it possible to produce, with high productivity, a polyester resin molded product that promotes polyester resin crystallization and maintains high transparency after crystallization and is applicable for a wide variety of uses can be provided.

Abstract: A semiconductor device includes a semiconductor body including first to fourth semiconductor layers. The second semiconductor layer of second conductivity type is provided on the first semiconductor layer of first conductivity type; the third semiconductor layer of first conductivity type is provided selectively on the second semiconductor layer; and the fourth semiconductor layer of second conductivity type is provided selectively on the second semiconductor layer. The semiconductor device further includes first and second control electrodes. The first and second control electrodes are provided inside the semiconductor body and oppose the second semiconductor layer with first and second insulating films interposed, respectively, and are arranged alternately with a third insulating layer interposed. The first control electrode contacts the third insulating layer at a first surface thereof, and the second control electrode contacts the third insulating layer at a second surface opposite to the first surface.

Abstract: A semiconductor circuit of an embodiment includes semiconductor device and a control circuit. The semiconductor device includes a semiconductor layer that has a first region of a first-conductivity type, a second region of a second-conductivity type, a third region of the first-conductivity type, fourth region of the second-conductivity type, first and second trench, first and second gate electrode, a first gate insulating film in contact with the fourth region, and a second gate insulating film spaced away from the fourth region. The semiconductor device includes a first gate electrode pad connected to the first gate electrode, and a second gate electrode pad connected to the second gate electrode. Prior to changing a first gate voltage from a turn-ON voltage to a turn-OFF voltage, a second gate voltage changed from a first voltage to a second voltage. The second voltage is a negative voltage when the first-conductivity type is p-type.

Abstract: A semiconductor device includes a semiconductor part having a first surface and a second surface opposite to the first surface, a first electrode on the first surface, a second electrode on the second surface, first to third control electrodes between the first electrode and the semiconductor part. The first to third control electrodes are biased independently from each other. The semiconductor part includes a first layer of a first-conductivity-type, a second layer of a second-conductivity-type, a third layer of the first-conductivity-type and the fourth layer of the second-conductivity-type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The second layer opposes the first to third control electrode with insulating films interposed.

Abstract: A semiconductor device of an embodiment includes first and second electrodes; first and second gate electrodes; and semiconductor layer including first and second planes, the semiconductor layer including a first semiconductor region of first conductivity type including first portion, second portion having a carrier concentration higher than the first portion, and third portion having a carrier concentration lower than the second portion; a second semiconductor region of second conductivity type between the first semiconductor region and the first plane and facing the first gate electrode; a third semiconductor region of first conductivity type between the second semiconductor region and the first plane and contacting the first electrode; a fourth semiconductor region of second conductivity type between the first semiconductor region and the second plane and facing the second gate electrode; and a fifth semiconductor region of first conductivity type between the fourth semiconductor region and the second plan

Abstract: A semiconductor device of an embodiment includes semiconductor layer including first and second planes, and in order from the first plane's side to the second plane's side, first region of first conductivity type, second region of second conductivity type, third region of second conductivity type having second conductivity type impurity concentration higher than the second region, fourth region of first conductivity type, and fifth region of second conductivity type, and including first and second trench on the first plane's side; first gate electrode in the first trench; first gate insulating film in contact with the fifth semiconductor region; second gate electrode in the second trench; second gate insulating film; a first electrode on the first plane; second electrode on the second plane; first gate electrode pad connected to the first gate electrode; and second gate electrode pad connected to the second gate electrode.

Abstract: There is provided an epoxy resin composition containing an epoxy compound, which has a low viscosity and a low dielectric constant, and when added to a general-purpose epoxy resin composition, can lower a viscosity of the composition and can sufficiently lower a dielectric constant of an epoxy resin cured product obtained from the composition. An epoxy resin composition comprising: (a) an epoxy component containing at least an epoxy compound of formula [1]; and (b) a curing agent: wherein R1 to R3 each independently are a hydrogen atom or methyl group, and L1 to L3 each independently are pentamethylene group, hexamethylene group or heptamethylene group.

Abstract: A treatment system is provided and includes a treatment probe configured to perform treatment on a subject portion by irradiating the subject portion in a subject with light, an acoustic wave reception unit configured to receive an acoustic wave generated by irradiating the subject with light and to output a reception signal, an acquisition unit configured to acquire quantitative information about the subject portion based on the reception signal, and a display control unit configured to perform control to display the quantitative information about the subject portion.

Abstract: A semiconductor device includes a semiconductor body including first to fourth semiconductor layers. The second semiconductor layer of second conductivity type is provided on the first semiconductor layer of first conductivity type; the third semiconductor layer of first conductivity type is provided selectively on the second semiconductor layer; and the fourth semiconductor layer of second conductivity type is provided selectively on the second semiconductor layer. The semiconductor device further includes first and second control electrodes. The first and second control electrodes are provided inside the semiconductor body and oppose the second semiconductor layer with first and second insulating films interposed, respectively, and are arranged alternately with a third insulating layer interposed. The first control electrode contacts the third insulating layer at a first surface thereof, and the second control electrode contacts the third insulating layer at a second surface opposite to the first surface.

Abstract: A semiconductor device includes a semiconductor layer having a first plane and a second plane; an emitter electrode on a side of the first plane; at least one collector electrode on a side of the second plane; a first gate electrode on the side of the first plane; at least one second gate electrode on the side of the second plane; a drift region of a first conductivity-type in the semiconductor layer; a collector region of a second conductivity-type in the semiconductor layer; and a first conductivity-type region of the first conductivity-type provided between a part of the collector region and the second plane, wherein the semiconductor device has a first effective gate distance and a second effective gate distance different from the first effective gate distance.

Abstract: A semiconductor device includes a semiconductor body; a first electrode on the semiconductor body; control electrodes provided in the semiconductor body along the surface thereof; and first films electrically insulating the control electrodes from the semiconductor body. The semiconductor body includes first, third, sixth layers of a first conductivity type, and second, fourth, fifth layers of a second conductivity type. The second to sixth layers are provided between the first electrode and the first layer. The second and third layers are positioned between two adjacent control electrodes. The fourth to sixth layers are positioned between other two adjacent control electrodes. The sixth layer positioned between the fourth layer and the fifth layer. The sixth layer includes a major portion and a boundary portion between the major portion and one of the first films. An impurity concentration in the boundary portion is lower than that in the major portion.

Abstract: A semiconductor circuit of an embodiment includes semiconductor device and a control circuit. The semiconductor device includes a semiconductor layer that has a first region of a first-conductivity type, a second region of a second-conductivity type, a third region of the first-conductivity type, fourth region of the second-conductivity type, first and second trench, first and second gate electrode, a first gate insulating film in contact with the fourth region, and a second gate insulating film spaced away from the fourth region. The semiconductor device includes a first gate electrode pad connected to the first gate electrode, and a second gate electrode pad connected to the second gate electrode. Prior to changing a first gate voltage from a turn-ON voltage to a turn-OFF voltage, a second gate voltage changed from a first voltage to a second voltage. The second voltage is a negative voltage when the first-conductivity type is p-type.

Abstract: An object information acquiring apparatus according to the present invention includes: an acoustic wave detecting element which detects an acoustic wave propagating from an object and which outputs an acoustic signal; a reference element which receives an input of electrical noise corresponding to electrical noise input to the acoustic wave detecting element and which outputs a reference signal; a noise reducer which reduces a component derived from the electrical noise by subtracting the reference signal from the acoustic signal; and a processor which generates image data representing characteristic information of the object using the acoustic signal in which the component derived from the electrical noise has been reduced.

Abstract: Provided are: a material having high thermal conductivity that includes an alumina fiber sheet and a resin, wherein the material having high thermal conductivity includes 20-90% by mass of the alumina fiber sheet; and a method for producing a material having high thermal conductivity, the method including (1) a step for preparing a fiber sheet that includes an alumina source by electrostatic spinning or dry spinning in which a dispersion including an alumina source and a water-soluble polymer is used as a spinning material, (2) a step for firing the fiber sheet including an alumina source to prepare an alumina fiber sheet, and (3) a step for impregnating the alumina fiber sheet with a resin solution having a resin concentration of 10% by weight or less.

Abstract: An ultrasonic apparatus includes an ultrasonic reception unit configured to receive an ultrasonic wave generated from a subject and output a reception signal, an amplifier configured to amplify an intensity of the reception signal, a transmission unit configured to transmit an amplification signal obtained by amplifying the reception signal, an attenuator configured to output an attenuation signal obtained by attenuating an intensity of the transmitted amplification signal, and an acquisition unit configured to acquire information regarding the subject at least based on the attenuation signal.

Abstract: A polyester resin composition containing 100 parts by mass of a polyester resin and 0.01 to 10 parts by mass of a 2-amino-1,3,5-triazine derivative of Formula [1]: a polyester resin molded body obtained by the composition, and a crystal nucleating agent including the triazine derivative. A polyester resin composition containing a crystal nucleating agent that makes it possible to produce, with high productivity, a polyester resin molded product that promotes polyester resin crystallization and maintains high transparency after crystallization and is applicable for a wide variety of uses can be provided.