Abstract: Provided is a method of producing an Al alloy cast material capable of properly adjusting an additive amount of Ti. The present invention is directed to a method of producing an Al alloy cast material in which an Al alloy molten metal supplied to a casting machine through a molten metal passage is solidified by the casting machine to produce an Al alloy cast material. The production method of the present invention includes a primary Ti-addition step of preliminarily adding Ti to an Al alloy molten metal before flowing through a molten metal passage and a secondary Ti-addition step of adding Ti to an Al alloy molten metal flowing through a molten metal passage by a feeder.

Abstract: A semiconductor device is disclosed that includes a ceramic substrate having first and second surfaces, a semiconductor element, a radiator, and an interposed portion located between the second surface and the radiator. The interposed portion has coupling regions that couple the second surface to the radiator, and non-coupling regions that do not couple the second surface to the radiator. Each non-coupling region is formed as an elongated groove. In the group of the non-coupling regions, the width of the outermost non-coupling region in the interposed portion is greater than the width of the innermost non-coupling region in the interposed portion. Regarding an adjacent pair of the non-coupling regions in the width direction, the width of the outer non-coupling region is greater than or equal to the width of the inner non-coupling region.