Patents by Inventor Takeshi Tsuno

Takeshi Tsuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170162428
    Abstract: A room-temperature bonding apparatus includes a bonding chamber, an upper-side stage mechanism to support an upper-side wafer to be movable in an upper and lower direction in the bonding chamber, and a lower-side stage mechanism configured to support a lower-side wafer in a horizontal plane in the bonding chamber. The lower-side stage mechanism includes a carriage having a lower-side wafer holding section for holding the lower-side wafer, an elastic guide connected to the carriage to support the carriage, a positioning stage for finely moving the lower-side wafer holding section, and a fine movement mechanism for finely moving a lower-side wafer holding section, and a carriage support base. The elastic guide supports the carriage elastically deforms so as for the carriage to contact the carriage support base when the upper-side wafer contacts the lower-side wafer and a load is applied to the carriage into an upper and lower direction by the upper-side stage mechanism.
    Type: Application
    Filed: December 26, 2014
    Publication date: June 8, 2017
    Applicant: Mitsubishi Heavy Industries Machine Tool Co., Ltd.
    Inventors: Masato KINOUCHI, Takayuki GOTO, Takeshi TSUNO, Kensuke IDE, Takenori SUZUKI
  • Patent number: 9580306
    Abstract: A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: February 28, 2017
    Assignees: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Masato Kinouchi, Takayuki Goto, Takeshi Tsuno, Jun Utsumi, Kensuke Ide, Takenori Suzuki, Keiichiro Tsutsumi, Hideki Takagi, Yuuichi Kurashima
  • Patent number: 9443711
    Abstract: A room-temperature bonding apparatus of the present invention includes: a plurality of first beam sources configured to emit a plurality of first activation beams which are irradiated to a first activation surface of a first substrate; a plurality of second beam sources configured to emit a plurality of second activation beams which are irradiated to a second activation surface of a second substrate; and a pressure welding mechanism configured to bond the first substrate and the second substrate by bring the first activation surface and the second activation surface contact, after the first activation surface and the second activation surface are irradiated.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: September 13, 2016
    Assignee: Mitsubishi Heavy Industries Machine Tool Co., Ltd.
    Inventors: Masato Kinouchi, Takayuki Goto, Takeshi Tsuno, Kensuke Ide, Takenori Suzuki
  • Publication number: 20150294900
    Abstract: A room-temperature bonded device has a first substrate having a first surface and a second substrate having a second surface to be bonded to the first surface. In the bonding of the first surface and the second surface, one of the first surface and the second surface contains an inorganic material such as silicon, SiO2, GaN and LiTaO3. The other of the first surface and the second surface contains an inorganic material such as silicon, SiO2, quartz and Au. The inorganic materials of the first surface and the second surface may be same or may be different.
    Type: Application
    Filed: November 26, 2013
    Publication date: October 15, 2015
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Takayuki Goto, Keiichiro Tsutsumi, Takeshi Tsuno, Masato Kinouchi, Kensuke Ide
  • Publication number: 20150251904
    Abstract: A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.
    Type: Application
    Filed: September 25, 2013
    Publication date: September 10, 2015
    Applicants: MITSUBISHI HEAVY INDUSTRIES, LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Masato Kinouchi, Takayuki Goto, Takeshi Tsuno, Jun Utsumi, Kensuke Ide, Takenori Suzuki, Keiichiro Tsutsumi, Hideki Takagi, Yuuichi Kurashima
  • Patent number: 9130000
    Abstract: A wafer bonding method includes: holding a first substrate with an upper holding mechanism 7 by applying a voltage to the upper holding mechanism 7; generating a bonded substrate by bonding the first substrate and a second substrate held with a lower holding mechanism 8; and dechucking the bonded substrate from the upper holding mechanism 7 after a voltage which attenuates while alternating is applied to the upper holding mechanism 7. By applying the voltage which attenuates while alternating to the upper holding mechanism 7, residual attracting force between the bonded substrate and the upper holding mechanism 7 is reduced, thereby enabling the bonded substrate to be dechucked from the holding mechanism more surely in a shorter time period. As a result, the first substrate and the second substrate can be bonded in a shorter time period.
    Type: Grant
    Filed: February 19, 2009
    Date of Patent: September 8, 2015
    Assignee: MITSUBISHI HEAVY INDUSTRIES
    Inventors: Takeshi Tsuno, Takayuki Goto, Masato Kinouchi, Kensuke Ide, Takenori Suzuki
  • Publication number: 20150249026
    Abstract: A room-temperature bonding apparatus includes a vacuum chamber; a first holding mechanism; a second holding mechanism; a beam source; and a pressure bonding mechanism which bonds first and second substrates. At least one of the above members is formed of a first material which is difficult to be sputtered or which does not obstruct a function of a device obtained by bonding the first and second substrates even if the first material is in the bonding surfaces, or a surface of the at least one is covered with the first material.
    Type: Application
    Filed: July 30, 2013
    Publication date: September 3, 2015
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Takeshi Tsuno, Takayuki Goto, Masato Kinouchi, Jun Utsumi, Kensuke Ide, Takenori Suzuki
  • Patent number: 9064910
    Abstract: A multi-layer bonding method of the present invention includes: forming a first bonded substrate by bonding a first substrate and an intermediate substrate in a bonding chamber; conveying a second substrate inside said bonding chamber when said first bonded substrate is arranged inside said bonding chamber; and forming a second bonded substrate by bonding said first bonded substrate and said second substrate in said bonding chamber. According to such a multi-layer bonding method, the upper-side substrate can be bonded with an intermediate substrate and then a first bonded substrate is bonded with a lower-side substrate without taking out the first bonded substrate from the bonding chamber. For this reason, a second bonded substrate can be produced at high speed and at a low cost.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: June 23, 2015
    Assignee: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Masato Kinouchi, Takayuki Goto, Takeshi Tsuno, Kensuke Ide, Takenori Suzuki
  • Patent number: 9023170
    Abstract: A multi-layer bonding method of the present invention includes: forming a first bonded substrate by bonding a first substrate and an intermediate substrate in a bonding chamber; conveying a second substrate inside said bonding chamber when said first bonded substrate is arranged inside said bonding chamber; and forming a second bonded substrate by bonding said first bonded substrate and said second substrate in said bonding chamber. According to such a multi-layer bonding method, the upper-side substrate can be bonded with an intermediate substrate and then a first bonded substrate is bonded with a lower-side substrate without taking out the first bonded substrate from the bonding chamber. For this reason, a second bonded substrate can be produced at high speed and at a low cost.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: May 5, 2015
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Masato Kinouchi, Takayuki Goto, Takeshi Tsuno, Kensuke Ide, Takenori Suzuki
  • Patent number: 9005390
    Abstract: A room temperature bonding apparatus includes angle adjustment means supporting a first sample stage holding a first substrate so as to be able to change a direction of the first sample stage; a first driving device driving the first stage in a first direction; a second driving device driving a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table supporting the second sample stage in the first direction when the second substrate and the first substrate are brought into contact. The apparatus can impose a load exceeding a withstand load of the second driving device on the first and second substrates. Further, the apparatus uses angle adjustment means to change direction of the first substrate to be parallel with the second substrate and uniformly impose the larger load on a bonding surface.
    Type: Grant
    Filed: June 22, 2012
    Date of Patent: April 14, 2015
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Takeshi Tsuno, Takayuki Goto, Masato Kinouchi, Satoshi Tawara, Jun Utsumi, Yoichiro Tsumura, Kensuke Ide, Takenori Suzuki
  • Patent number: 8985175
    Abstract: A room temperature bonding machine is provided with an evacuation apparatus, a gas supply apparatus, a pressure gauge, a cleaner apparatus, a pressure controller and a pressing mechanism. The evacuation apparatus evacuates gas from the chamber. The gas supply apparatus supplies introduction gas into the chamber. The pressure gauge measures the pressure in the chamber. The cleaner apparatus cleans first and second substrates in the chamber when said pressure is at a predetermined degree of vacuum. The pressure controller controls both of the evacuation apparatus and the gas supply apparatus so that the pressure is regulated to a target pressure. The pressing mechanism presses and bonds the first and second substrates when the pressure is set to said target pressure.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: March 24, 2015
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Masato Kinouchi, Takayuki Goto, Satoshi Tawara, Takeshi Tsuno, Jun Utsumi, Kensuke Ide, Takenori Suzuki
  • Patent number: 8906175
    Abstract: A room temperature bonding apparatus according to the present invention is provided with a load lock chamber having an internal space which is pressure-reduced; and a cartridge arranged in the load lock chamber. The cartridge includes an island portion formed to contact a substrate when the substrate is put on the cartridge. A flow passage is formed for the island portion to connect a space between the cartridge and the substrate to outside when the substrate is put on the cartridge. Therefore, in the room temperature bonding apparatus can prevent making the substrate is moved to the cartridge due to gas when the internal space is pressure-reduced.
    Type: Grant
    Filed: September 29, 2009
    Date of Patent: December 9, 2014
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Masato Kinouchi, Takayuki Goto, Satoshi Tawara, Takeshi Tsuno, Jun Utsumi, Kensuke Ide, Takenori Suzuki
  • Patent number: 8857487
    Abstract: A room temperature bonding apparatus includes: an angle adjustment mechanism that supports a first sample stage holding a first substrate to a first stage so as to be able to change a direction of the first sample stage; a first driving device that drives the first stage in a first direction; a second driving device that drives a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table that supports the second sample stage in the first direction when the second substrate and the first substrate are brought into press contact with each other. In this case, the room temperature bonding apparatus can impose a larger load exceeding a withstand load of the second driving device on the first substrate and the second substrate.
    Type: Grant
    Filed: March 11, 2008
    Date of Patent: October 14, 2014
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Takeshi Tsuno, Takayuki Goto, Masato Kinouchi, Satoshi Tawara, Jun Utsumi, Yoichiro Tsumura, Kensuke Ide, Takenori Suzuki
  • Publication number: 20140224405
    Abstract: A room-temperature bonding apparatus of the present invention includes: a plurality of first beam sources configured to emit a plurality of first activation beams which are irradiated to a first activation surface of a first substrate; a plurality of second beam sources configured to emit a plurality of second activation beams which are irradiated to a second activation surface of a second substrate; and a pressure welding mechanism configured to bond the first substrate and the second substrate by bring the first activation surface and the second activation surface contact, after the first activation surface and the second activation surface are irradiated.
    Type: Application
    Filed: February 24, 2012
    Publication date: August 14, 2014
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Masato Kinouchi, Takayuki Goto, Takeshi Tsuno, Kensuke Ide, Takenori Suzuki
  • Publication number: 20130112334
    Abstract: A room temperature bonding method of the present invention includes a step of activating two substrates to prepare two activated substrates; a step of bonding the two activated substrates to produce a bonding resultant substrate; a step of performing annealing of the bonding resultant substrate to reduce residual stress of the bonding resultant substrate. According to such a room temperature bonding method, the residual stress of the bonding resultant substrate can be reduced and the quality can be improved.
    Type: Application
    Filed: July 29, 2011
    Publication date: May 9, 2013
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Takeshi Tsuno, Takayuki Goto, Masato Kinouchi, Kensuke Ide
  • Publication number: 20120285624
    Abstract: A room temperature bonding apparatus includes angle adjustment means supporting a first sample stage holding a first substrate so as to be able to change a direction of the first sample stage; a first driving device driving the first stage in a first direction; a second driving device driving a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table supporting the second sample stage in the first direction when the second substrate and the first substrate are brought into contact. The apparatus can impose a load exceeding a withstand load of the second driving device on the first and second substrates. Further, the apparatus uses angle adjustment means to change direction of the first substrate to be parallel with the second substrate and uniformly impose the larger load on a bonding surface.
    Type: Application
    Filed: June 22, 2012
    Publication date: November 15, 2012
    Inventors: Takeshi TSUNO, Takayuki GOTO, Masato KINOUCHI, Satoshi TAWARA, Jun UTSUMI, Yoichiro TSUMURA, Kensuke IDE, Takenori SUZUKI
  • Publication number: 20120247645
    Abstract: The present invention includes an activating step S2 of activating, by irradiating a first substrate surface of a first substrate and a second substrate surface of a second substrate with particles, the second substrate surface and the first substrate surface, and a bonding step S4 of bonding the second substrate and the first substrate together by bringing the second substrate surface and the first substrate surface into contact with each other after a temperature difference between a temperature of the first substrate and a temperature of the second substrate becomes equal to or lower than a predetermined value. According to this bonding method, warpage occurring in a bonded substrate obtained can be further reduced compared with other bonding methods of bonding both substrates before the temperature difference between the temperature of the first substrate and the temperature of the second substrate becomes equal to or lower than a predetermined value.
    Type: Application
    Filed: November 30, 2010
    Publication date: October 4, 2012
    Applicant: MITSUBISHI HEAVY INDUSTIRIES, LTD.
    Inventors: Keiichiro Tsutsumi, Takeshi Tsuno, Takayuki Goto, Masato Kinouchi, Takenori Suzuki, Kensuke Ide
  • Publication number: 20120031557
    Abstract: A multi-layer bonding method of the present invention includes: forming a first bonded substrate by bonding a first substrate and an intermediate substrate in a bonding chamber; conveying a second substrate inside said bonding chamber when said first bonded substrate is arranged inside said bonding chamber; and forming a second bonded substrate by bonding said first bonded substrate and said second substrate in said bonding chamber. According to such a multi-layer bonding method, the upper-side substrate can be bonded with an intermediate substrate and then a first bonded substrate is bonded with a lower-side substrate without taking out the first bonded substrate from the bonding chamber. For this reason, a second bonded substrate can be produced at high speed and at a low cost.
    Type: Application
    Filed: October 27, 2010
    Publication date: February 9, 2012
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.,
    Inventors: Masato Kinouchi, Takayuki Goto, Takeshi Tsuno, Kensuke Ide, Takenori Suzuki
  • Publication number: 20110277904
    Abstract: A room temperature bonding apparatus according to the present invention is provided with a load lock chamber having an internal space which is pressure-reduced; and a cartridge arranged in the load lock chamber. The cartridge includes an island portion formed to contact a substrate when the substrate is put on the cartridge. A flow passage is formed for the island portion to connect a space between the cartridge and the substrate to outside when the substrate is put on the cartridge. Therefore, in the room temperature bonding apparatus can prevent making the substrate is moved to the cartridge due to gas when the internal space is pressure-reduced.
    Type: Application
    Filed: September 29, 2009
    Publication date: November 17, 2011
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Masato Kinouchi, Takayuki Goto, Satoshi Tawara, Takeshi Tsuno, Jun Utsumi, Kensuke Ide, Takenori Suzuki
  • Publication number: 20110207291
    Abstract: A wafer bonding method includes: holding a first substrate with an upper holding mechanism 7 by applying a voltage to the upper holding mechanism 7; generating a bonded substrate by bonding the first substrate and a second substrate held with a lower holding mechanism 8; and dechucking the bonded substrate from the upper holding mechanism 7 after a voltage which attenuates while alternating is applied to the upper holding mechanism 7. By applying the voltage which attenuates while alternating to the upper holding mechanism 7, residual attracting force between the bonded substrate and the upper holding mechanism 7 is reduced, thereby enabling the bonded substrate to be dechucked from the holding mechanism more surely in a shorter time period. As a result, the first substrate and the second substrate can be bonded in a shorter time period.
    Type: Application
    Filed: February 19, 2009
    Publication date: August 25, 2011
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.,
    Inventors: Takeshi Tsuno, Takayuki Goto, Masato Kinouchi, Kensuke Ide, Takenori Suzuki