Abstract: AFM tweezers includes: a first probe that comprises a triangular prism member having a ridge, a tip of which is usable as a probe tip in a scanning probe microscope; a second probe that comprises a triangular prism member provided so as to open/close with respect to the first probe. The first probe and the second probe are juxtaposed such that a predetermined peripheral surface of the triangular prism member of the first probe and a predetermined peripheral surface of the triangular prism member of the second probe face substantially in parallel to each other, and the first probe formed of a notch that prevents interference with a sample when the sample is scanned by the tip of the ridge.

Abstract: There is provided a sample manipulating apparatus 1 which is an apparatus of manipulating a sample S mounted on a substrate surface 2a, in which at least a position data and a shape data are acquired by observing the sample S, thereafter, a tweezers 4 is positioned by moving means 5 such that the sample S is positioned between an observing probe 15 and a grasping probe 16 based on the two data, after the positioning, a height of the tweezers 4 is set to a position of being remote from the substrate surface 2a by a constant distance by moving means 5 while monitoring a result of measurement by displacement measuring means 7, thereafter, the grasping probe 16 is moved to a side of the observing probe 15 while monitoring the result of measurement by the displacement measuring means 7 at the set height and the sample S is grasped while detecting a grasping start point.

Abstract: To realize to adapt to a shape of a surface, shorten a measurement time period and promote a measurement accuracy by setting a sampling interval in accordance with a slope of the shape of the surface and controlling a stylus in accordance with the interval, there is provided a scanning probe microscope, in which in scanning the stylus, an observation data immediately therebefore is stored as a history, the sampling interval in X or Y direction is set at each time based on a shape of the observation data, and the stylus is scanned to a successive sampling position.

Abstract: There is provided a sample operation apparatus in which, by a static electricity force acting between a probe and a sample, an accurate position is gripped without the sample being moved, and the sample can be operated by the probe for an observation, a grip, a release, or the like. In a casing body capable of being sealed, there are installed a sample operation tweezers comprising an observation probe and a grip probe, and a sample base fixing a substrate on which the sample is mounted. By the facts that a surface of the substrate is treated such that its hydrophilic nature is higher than the sample operation tweezers, and that a humidity in the casing body is controlled by a humidity control device, there is made such that an actuation of a grip, a movement, a separation or the like of the sample is performed under a state in which water films are formed on the sample, the substrate and a surface of the sample operation tweezers.

Abstract: There is provided a sample operation apparatus in which, by a static electricity force acting between a probe and a sample, an accurate position is gripped without the sample being moved, and the sample can be operated by the probe for an observation, a grip, a release, or the like.

Abstract: A semiconductor device includes a first wiring layer having a first wiring, a second wiring layer having a second wiring formed over the first wiring layer, and a first insulating layer interposed between the first and second wiring layers, wherein the second wiring layer or an upper layer thereof has a fine projection, and the diameter of a circle circumscribing the projection in a plane or sectional view is 40 nm or less.

Abstract: A position change section of a processing device changes the position of a treatment object, at the time of performing a process by a process section, to correspond to a predetermined position in conformity to the treatment object. An inspection device inspects the occurrence of a defect on the treatment object having been subjected to processes by a plurality of processing devices. Then an analyzing process for specifying in which processing device the defect occurred is carried out based on (i) positional information of the treatment object, in each of the processing devices, and (ii) defect information defected by the inspection device. With this arrangement, during the process of manufacture of treatment objects, it is possible to precisely specify which processing device or processing device group caused the defect, without performing processes such as attaching, to the treatment object, information regarding processing devices which have conducted processes.

Abstract: A method of manufacturing a semiconductor device including a first step of depositing a first film and a second film on a conductive layer in this order and etching a desired portion of the second film with a first etching gas until the first film is exposed, the first film being made of one of a silicon nitride film and a silicon nitride oxide film, the second film being made of a silicon oxide film, a second step of removing a reaction product deposited on the first film through the first step with a second etching gas to expose the first film, a third step of etching the first film exposed through the second step with a third etching gas until the conductive layer is exposed and a fourth step of removing a reaction product deposited on the conductive layer through the third step with a fourth etching gas, thereby forming a concave portion penetrating the first and second films to reach the conductive layer surface.

Abstract: A semiconductor device comprising: an underlayer interconnect layer; an interlayer dielectric film formed with a connection hole reaching the underlayer interconnect layer; and an upper interconnect layer buried in the connection hole, wherein the interlayer dielectric film includes an insulating film containing an impurity for detecting a first etching end point, a first insulating film, an insulating film containing an impurity for detecting a second etching end point and a second insulating film, these four films being laminated in this order.

Abstract: A semiconductor device comprising: an underlayer interconnect layer; an interlayer dielectric film formed with a connection hole reaching the underlayer interconnect layer; and an upper interconnect layer buried in the connection hole, wherein the interlayer dielectric film includes an insulating film containing an impurity for detecting a first etching end point, a first insulating film, an insulating film containing an impurity for detecting a second etching end point and a second insulating film, these four films being laminated in this order.

Abstract: A method of manufacturing a semiconductor device including a first step of depositing a first film and a second film on a conductive layer in this order and etching a desired portion of the second film with a first etching gas until the first film is exposed, the first film being made of one of a silicon nitride film and a silicon nitride oxide film, the second film being made of a silicon oxide film, a second step of removing a reaction product deposited on the first film through the first step with a second etching gas to expose the first film, a third step of etching the first film exposed through the second step with a third etching gas until the conductive layer is exposed and a fourth step of removing a reaction product deposited on the conductive layer through the third step with a fourth etching gas, thereby forming a concave portion penetrating the first and second films to reach the conductive layer surface.

Abstract: A process for manufacturing a semiconductor device having a lower wiring layer, an interlayer insulating film and an upper wiring layer in this order and a connection hole formed in the interlayer insulating film on the lower wiring layer, wherein the connection hole is provided by the steps of: forming a photoresist layer on the interlayer insulating film; and forming in the photoresist layer an opening for the connection hole which exposes the interlayer insulating film at the bottom thereof and an opening for a dummy connection hole which does not expose the interlayer insulating film at the bottom thereof.

Abstract: A process for manufacturing a semiconductor device having a lower wiring layer, an interlayer insulating film and an upper wiring layer in this order and a connection hole formed in the interlayer insulating film on the lower wiring layer, wherein the connection hole is provided by the steps of: forming a photoresist layer on the interlayer insulating film; and forming in the photoresist layer an opening for the connection hole which exposes the interlayer insulating film at the bottom thereof and an opening for a dummy connection hole which does not expose the interlayer insulating film at the bottom thereof.

Abstract: A semiconductor device having lead terminals bent in a J-shape is disclosed. A radiating plate having a recess formed on an outer peripheral portion thereof is exposed to a lower face of a resin member and free ends of outer portions of the lead terminals are positioned in the recess of the radiating plate. The free ends of the outer portions of the lead terminals and the recess of the radiating plate are isolated from each other by projections of the resin member. Since the radiating plate is exposed to the lower face of the resin member, the heat radiating property is high whereas the radiating plate and the lead terminals are not short-circuited to each other at all.

Abstract: A scanning probe microscope comprises a cantilever having a probe at an end portion thereof. A scanning signal generating device generates a main scanning signal and a sub-scanning signal. A main scanning device scans the probe along a main scanning direction over a sample surface in accordance with the main scanning signal. A sub-scanning device scans the probe along a sub-scanning direction over the sample surface in accordance with the sub-scanning signal. A Z-direction fine moving device moves the probe in a fine movement in the Z direction with respect to the sample surface maintains the probe at a predetermined distance from the sample surface. At least two of the main scanning device, the sub-scanning device, and the Z-direction fine moving device comprise voice coil motors. Each of the voice coil motors has a stator having a groove and a movable member extending into the groove for undergoing movement therein.

Abstract: A scanning probe microscope for scanning a probe needle in proximity to a surface of a sample in XY-axis directions while moving at least one of the probe and the sample in a Z-axis direction has a plurality of band-pass filters for passing a plurality of band-pass signals by extracting predetermined frequency bands different one another from a surface geometry signal output by a probe. An image memory stores the respective band-pass signals and corresponding positions on the sample surface, and a color image outputting device outputs a color image by treating each of the respective band-pass signals stored as image data in the image memory as different color data and combining the data.

Abstract: A semiconductor device having a pellet mounted on a radiating plate thereof is disclosed. The radiating plate is formed in such a shape that a central portion thereof is positioned higher than both end portions thereof. A pellet is mounted on a lower face of the central portion of the radiating plate, and an upper face of the central portion of the radiating plate is exposed to the top of a resin member. Since the upper face of the central portion of the radiating plate which has the pellet mounted on the lower face thereof is exposed from the resin member, heat generated by the pellet can be radiated efficiently.

Abstract: A semiconductor device is disclosed wherein a pair of radiating terminals and a plurality of lead terminals are formed from a single lead frame. A hole or holes in each radiating terminal are formed with an equal width and in an equal pitch to those of gaps between the lead terminals, and the opposite sides of each hole of the radiating terminal are connected to each other by a support element. The support elements of the radiating terminals and support elements which interconnect the lead terminals are formed with an equal length and in an equal pitch to allow the support elements to be cut away by a plurality of punches which are arranged in an equal pitch and have an equal width.

Abstract: A plastic-encapsulated semiconductor device is provided, which is capable of efficient heat dissipation without upsizing while preventing the moisture from reaching an IC chip. This device is comprised of an electrically-conductive island having a chip-mounting area, an IC chip fixed on the chip-mounting area of the island, leads electrically connected to bonding pads of the chip through bonding wires, a plastic package for encapsulating the island, the chip, the bonding wires, and inner parts of the leads. The package has an approximately flat bottom face. Outer parts of the leads are protruded from the package and are located in approximately a same plane as the bottom face of the package. The island has an exposition part exposed from the package at a location excluding the chip-mounting area. A lower face of the exposition part of the island is located in approximately a same plane as the bottom face of the package. The chip and the chip-mounting area of the island are entirely buried in the package.

Abstract: A semiconductor device is disclosed wherein a pair of radiating terminals and a plurality of lead terminals are formed from a single lead frame. A hole or holes in each radiating terminal are formed with an equal width and in an equal pitch to those of gaps between the lead terminals, and the opposite sides of each hole of the radiating terminal are connected to each other by a support element. The support elements of the radiating terminals and support elements which interconnect the lead terminals are formed with an equal length and in an equal pitch to allow the support elements to be cut away by a plurality of punches which are arranged in an equal pitch and have an equal width.