Abstract: A silicon nitride powder having a specific surface area of 4.0 to 9.0 m2/g, a ? phase proportion of less than 40 mass %, and an oxygen content of 0.20 to 0.95 mass %, wherein a frequency distribution curve obtained by measuring a volume-based particle size distribution by a laser diffraction scattering method has two peaks, peak tops of the peaks are present respectively at 0.4 to 0.7 ?m and 1.5 to 3.0 ?m, a ratio of frequencies of the peak tops ((frequency of the peak top in a particle diameter range of 0.4 to 0.7 ?m)/(frequency of the peak top in a particle diameter range of 1.5 to 3.0 ?m)) is 0.5 to 1.5, and a ratio D50/DBET (?m/?m) of a median diameter D50 (?m) determined by the measurement of particle size distribution to a specific surface area-equivalent diameter DBET (?m) calculated from the specific surface area is 3.5 or more.

Abstract: A silicon nitride powder to be used in a slurry for forming a mold release layer of a polycrystalline silicon casting mold, wherein the specific surface area thereof is 5-50 m2/g, the proportion of amorphous silicon nitride is 1.0-25.0 mass %, and the oxygen content is 0.6-2.5 mass %. A silicon nitride powder slurry for use in mold release material and capable of forming, on a polycrystalline silicon casting mold, a mold release layer which exhibits favorable mold release properties and exhibits favorable adhesion to the casting mold after casting the polycrystalline silicon ingot, and a method for producing the same. A silicon nitride powder for mold release material, a silicon nitride powder for a slurry use for obtaining the silicon nitride powder slurry for use in the mold release material, and a method for producing the same. A polycrystalline silicon casting mold which exhibits favorable mold release properties of a polycrystalline silicon ingot; and method for producing the same.

Abstract: A silicon nitride powder having a specific surface area of 4.0 to 9.0 m2/g, a ? phase proportion of less than 40 mass %, and an oxygen content of 0.20 to 0.95 mass %, wherein a frequency distribution curve obtained by measuring a volume-based particle size distribution by a laser diffraction scattering method has two peaks, peak tops of the peaks are present respectively at 0.4 to 0.7 ?m and 1.5 to 3.0 ?m, a ratio of frequencies of the peak tops ((frequency of the peak top in a particle diameter range of 0.4 to 0.7 ?m)/(frequency of the peak top in a particle diameter range of 1.5 to 3.0 ?m)) is 0.5 to 1.5, and a ratio D50/DBET (?m/?m) of a median diameter D50 (?m) determined by the measurement of particle size distribution to a specific surface area-equivalent diameter DBET (?m) calculated from the specific surface area is 3.5 or more.

Abstract: A silicon nitride powder for a release agent of a polycrystalline silicon ingot casting mold, having a specific surface area of 5 to 40 m2/g, wherein, assuming that a content ratio of oxygen present in a particle surface layer is FSO (mass %), a content ratio of oxygen present inside a particle is FIO (mass %), and the specific surface area is FS (m2/g), FS/FSO is 8 to 30 and FS/FIO is 22 or more, and a ratio D10/D90 between a 10 vol % diameter D10 and a 90 vol % diameter D90 in a measurement of a particle size distribution on a volume basis by a laser diffraction particle size distribution meter of 0.05 to 0.20.

Abstract: A method of producing a silicon nitride powder includes heating an amorphous Si—N(—H)-based compound in which assuming that the specific surface area is RS (m2/g) and the oxygen content ratio is RO (mass %), RS/RO is 500 or more, at a temperature rising rate of 12 to 100° C./min in a temperature range from 1,000 to 1,400° C. while flowing the compound by a continuous firing furnace.

Abstract: A polycrystalline silicon ingot casting mold, and method for producing same. Mold release material being obtained by blending a silicon nitride powder (A) having an average particle diameter along the short axis of 0.6 to 13 ?m with a silicon nitride powder (B) having an average particle diameter along the short axis of 0.1 to 0.3 ?m at a weight ratio of 5:5 to 9:1; coating the mold surface with the slurry; and a heating the mold at 800 to 1200° C. in an atmosphere containing oxygen.

Abstract: Provided are a polycrystalline silicon ingot casting mold and a method for producing a polycrystalline silicon ingot casting mold, with which high-quality silicon ingots can be obtained at high yields by minimizing sticking with the surfaces of the silicon ingot casting mold, and losses and damages that occur when solidified silicon ingot is released from the mold. The method for producing a polycrystalline silicon ingot casting mold having a release layer, including: forming a slurry by mixing a silicon nitride powder with water, coating the surface of the mold with the slurry, and heating the mold at 400 to 800° C. in an atmosphere containing oxygen, after coating the slurry.

Abstract: A method of producing a silicon nitride powder includes heating an amorphous Si—N(—H)-based compound in which assuming that the specific surface area is RS (m2/g) and the oxygen content ratio is RO (mass %), RS/RO is 500 or more, at a temperature rising rate of 12 to 100° C./min in a temperature range from 1,000 to 1,400° C. while flowing the compound by a continuous firing furnace.

Abstract: Mold for casting a polycrystalline silicon ingot, and a silicon nitride powder for a mold release material thereof, a slurry containing a silicon nitride power for a mold release layer thereof, and a mold release material for casting thereof. The present invention relates to a silicon nitride powder for a mold release material of a mold for casting a polycrystalline silicon ingot characterized in that the percentage of primary particles of granular crystals monodispersed in powders is not less than 95% in terms of the area ratio calculated by analysis of an SEM image.

Abstract: Provided are a polycrystalline silicon ingot casting mold and a method for producing a polycrystalline silicon ingot casting mold, with which high-quality silicon ingots can be obtained at high yields by minimizing sticking with the surfaces of the silicon ingot casting mold, and losses and damages that occur when solidified silicon ingot is released from the mold. The method for producing a polycrystalline silicon ingot casting mold having a release layer, including: forming a slurry by mixing a silicon nitride powder with water, coating the surface of the mold with the slurry, and heating the mold at 400 to 800° C. in an atmosphere containing oxygen, after coating the slurry.

Abstract: An oxynitride phosphor includes an ?-sialon as the main component, which is represented by the formula: MxSi12?(m+n)Al(m+n)OnN16?n:Lny (wherein 0.3?x+y<1.5, 0<y<0.7, 0.3?m<4.5, 0<n<2.25, and assuming that the atomic valence of the metal M is a and the atomic valence of the lanthanide metal Ln is b, m=ax+by) and in which the aggregation index, A1=D50/DBET?3.0 or the aggregation index A2=D50/Dparticle?3.0; and a production method and usage of the phosphor.

Abstract: Mold for casting a polycrystalline silicon ingot, and a silicon nitride powder for a mold release material thereof, a slurry containing a silicon nitride power for a mold release layer thereof, and a mold release material for casting thereof. The present invention relates to a silicon nitride powder for a mold release material of a mold for casting a polycrystalline silicon ingot characterized in that the percentage of primary particles of granular crystals monodispersed in powders is not less than 95% in terms of the area ratio calculated by analysis of an SEM image.

Abstract: A polycrystalline silicon ingot casting mold, and method for producing same. Mold release material being obtained by blending a silicon nitride powder (A) having an average particle diameter along the short axis of 0.6 to 13 ?m with a silicon nitride powder (B) having an average particle diameter along the short axis of 0.1 to 0.3 ?m at a weight ratio of 5:5 to 9:1; coating the mold surface with the slurry; and a heating the mold at 800 to 1200° C. in an atmosphere containing oxygen.

Abstract: A light emitting transistor of the present invention has a light emitting layer, both a source electrode and a drain electrode both of which are connected with the light emitting layer electrically, an insulation layer arranged on the light emitting layer, a gate electrode arranged on the insulation layer. The light emitting layer is made from an organic semiconductor material. The light emitting transistor has also a periodic structure and the gate electrode to which an AC voltage is applied. And the emission intensity can be high, and width of the emission spectrum can be reduced. In addition, it is easy to control the amplitude of the emitting light and the width of emission spectrum reproducibly.

Abstract: An oxynitride phosphor includes an ?-sialon as the main component, which is represented by the formula: MxSi12-(m+n)Al(m+n)OnN16-n:Lny (wherein 0.3?x+y<1.5, 0<y<0.7, 0.3?m<4.5, 0<n<2.25, and assuming that the atomic valence of the metal M is a and the atomic valence of the lanthanide metal Ln is b, m=ax+by) and in which the aggregation index, A1=D50/DBET?3.0 or the aggregation index A2=D50/Dparticle?3.0; and a production method and usage of the phosphor.

Abstract: To provide sialon phosphor particles or a powder exhibiting high emission intensity in the region from ultraviolet to blue and not requiring a strong pulverization operation for pulverizing a sintered body or a large aggregated lump, and a production method thereof. Sialon phosphor particles represented by the formula: MxLnySi12?(m+n)Al(m+n)OnN16?n (wherein M is at least one metal selected from the group consisting of Li, Ca, Mg and Y, Ln is a lanthanide metal containing at least Eu, and assuming that the valence of the metal M is a and the valence of the lanthanide metal Ln is b, ax+by=m, x is 0<x, y?2.0, 0.3?m<4.5 and 0.5?n<2.5), wherein in the surface analysis by X-ray photoelectron spectroscopy, the ratio between the peak area of 3d5/2 spectrum of europium and the peak area of 2p spectrum of Si is 0.5 or less.

Abstract: A red phosphor where the crystal phase constituting the phosphor is monoclinic Eu-activated CaAlSiN3. A red phosphor which is Eu-activated CaAlSiN3 powder having an average particle diameter of 10 ?m or less as measured in the non-pulverized state by the laser scattering particle size distribution analysis. A light-emitting device comprising a blue light-emitting element, a yellow phosphor capable of converting the blue light emitted from the blue light-emitting element into yellow light, and the above-described red phosphor capable of converting the blue light emitted from the blue light-emitting element into red light. A method for producing Eu-activated CaAlSiN3, comprising firing a raw material powder comprising Ca3N2, AlN, Si3N4 and EuN at 1,400 to 2,000° C. in a nitrogen-containing atmosphere, the Ca3N2, AlN and Si3N4 giving a composition falling in the region surrounded by a straight line connecting the following four points A to D in the composition diagram of FIG.

Abstract: The present invention relates to an oxynitride phosphor comprising an ?-sialon as the main component, which is represented by the general formula: MxSi12?(m+n)Al(m+n)OnN16?n:Lny (wherein 0.3?x+y<1.5, 0<y<0.7, 0.3?m<4.5, 0<n<2.25, and assuming that the atomic valence of the metal M is a and the atomic valence of the lanthanide metal Ln is b, m=ax+by) and in which the aggregation index, A1=D50/DBET?3.0 or the aggregation index A2=D50/Dparticle?3.0; and a production method and usage of the phosphor. The phosphor of the present invention has less aggregation and a narrow particle size distribution, and therefore is easy to uniformly mix with a resin or the like, and a high-brightness white LED can be easily obtained. D50 [?m]: The median diameter in the grain size distribution curve. DBET [?m]: The equivalent-sphere diameter calculated on the basis of a BET specific surface area. Dparticle [?m]: The primary particle diameter measured by the image analysis of a scanning electron micrograph.

Abstract: To provide sialon phosphor particles or a powder exhibiting high emission intensity in the region from ultraviolet to blue and not requiring a strong pulverization operation for pulverizing a sintered body or a large aggregated lump, and a production method thereof. Sialon phosphor particles represented by the formula: MxLnySi12?(m+n)Al(m+n)OnN16?n (wherein M is at least one metal selected from the group consisting of Li, Ca, Mg and Y, Ln is a lanthanide metal containing at least Eu, and assuming that the valence of the metal M is a and the valence of the lanthanide metal Ln is b, ax+by=m, x is 0<x, y?2.0, 0.3?m<4.5 and 0.5?n<2.5), wherein in the surface analysis by X-ray photoelectron spectroscopy, the ratio between the peak area of 3d5/2 spectrum of europium and the peak area of 2p spectrum of Si is 0.5 or less.

Abstract: A red phosphor where the crystal phase constituting the phosphor is monoclinic Eu-activated CaAlSiN3. A red phosphor which is Eu-activated CaAlSiN3 powder having an average particle diameter of 10 ?m or less as measured in the non-pulverized state by the laser scattering particle size distribution analysis. A light-emitting device comprising a blue light-emitting element, a yellow phosphor capable of converting the blue light emitted from the blue light-emitting element into yellow light, and the above-described red phosphor capable of converting the blue light emitted from the blue light-emitting element into red light. A method for producing Eu-activated CaAlSiN3, comprising firing a raw material powder comprising Ca3N2, AlN, Si3N4 and EuN at 1,400 to 2,000° C. in a nitrogen-containing atmosphere, the Ca3N2, AlN and Si3N4 giving a composition falling in the region surrounded by a straight line connecting the following four points A to D in the composition diagram of FIG.