Abstract: An organic EL device has a structure in which an anode, a hole transporting layer, an organic luminescent layer, and a cathode are disposed on a glass substrate in this order. The organic EL device further has a protective layer covering an outer surface of the structure to protect it from an external environment. The protective layer is formed by an ALE method at a temperature lower than glass transition temperatures materials constituting the hole transporting layer and the organic luminescent layer.

Abstract: A fiber body includes a collection of fibers containing thermoplastic resin as the main component and an energy consuming component, such as a piezoelectric material for converting and consuming external mechanical energy of sound and vibration. The energy is converted into electrical energy, which in turn, is converted and consumed into and as heat by means of the electrical resistance of the resin.

Abstract: A sound-absorbing duct structure for an intake system of an automotive internal combustion engine. The sound-absorbing duct structure comprises a duct defining thereinside a gas passage. A part of the duct is formed with a plurality of small holes. An expanded duct section is formed around the part of the duct. The expanded duct section defines therein an inside space which is in communication with the gas passage through the small holes. The inside space has a cross-sectional area larger than that of the gas passage. A sound-absorbing section is disposed in at least a part of the inside space of the first expanded duct section. The sound absorbing section includes a piezoelectric material exhibiting a piezoelectric effect, and an electrically conductive material in contact with the piezoelectric material.

Abstract: The purpose of the present invention is to obtain an electrode wiring structure for semiconductor devices that can suppress the occurrence of Al voids inside aluminum alloy wiring without regard to the orientation of such aluminum alloy wiring. An interlayer insulator film 11, a titanium layer 12, a titanium nitride layer 13 that serves as the barrier layer, an aluminum alloy wiring layer 15 and a protective film 18 are formed on top of the silicon substrate 10 to compose the electrode structure. In this case, a distortion relaxation layer 14, with a film thickness of approximately over 10 nm and which is an intermetallic compound that includes aluminum and titanium in its composition, is formed in between the titanium nitride layer 13 and the aluminum alloy wiring layer 15. Because of this distortion relaxation layer, for every wiring width of 1 &mgr;m, the number of Al voids with widths of over 0.3 &mgr;m is practically reduced to 0.

Abstract: Disclosed is a video-signal recording and playback apparatus for recording and playing back a video signal of a television-broadcast program, the video-signal recording and playback apparatus comprising: recording means for recording a video signal onto an information-recording medium; extracting means for extracting a representative picture from a video signal to be recorded; attaching means for attaching an evaluation value to a representative picture extracted by the extracting means; preserving means for preserving a representative picture extracted by the extracting means in the information-recording medium; and thinning means for carrying out a thinning process on a number of representative pictures preserved by the preserving means in the information-recording medium on the basis of the evaluation value attached by the attaching means.

Abstract: A fiber body includes a collection of fibers containing thermoplastic resin as the main component and an energy consuming component, such as a piezoelectric material for converting and consuming external mechanical energy of sound and vibration. The energy is converted into electrical energy, which in turn, is converted and consumed into and as heat by means of the electrical resistance of the resin.

Abstract: An image recording and playback apparatus and method and a recording medium by which a representative picture of image data recorded on a hard disk can be searched out and displayed rapidly are disclosed. An inputted AV signal is recorded on a hard disk, and a comparison table produced based on GOP numbers of an inputted image signal and recorded positions on the hard disk at which the top data of GOPs of the GOP numbers is recorded is recorded on another hard disk. Another table produced based on GOP numbers of GOPs in each of which an intra-picture necessary to play back a corresponding representative picture is included and the distances between the intra-pictures and the corresponding representative pictures included in the GOPs of the GOP numbers is recorded on a further hard disk.

Abstract: An organic EL device has a structure in which an anode, a hole transporting layer, an organic luminescent layer, and a cathode are disposed on a glass substrate in this order. The organic EL device further has a protective layer covering an outer surface of the structure to protect it from an external environment. The protective layer is formed by an ALE method at a temperature lower than glass transition temperatures materials constituting the hole transporting layer and the organic luminescent layer.

Abstract: The present invention provides a novel pyrimidine derivative represented by the general formula (1): (wherein R, R4 and R8 are the same as defined in the specification) or pharmaceutically acceptable salt thereof, which possesses an excellent activity for inhibiting the formation of NO (nitrogen oxide) in vivo.

Abstract: A plasma process end point determination method comprises the steps of measuring a physical quantity in a circuit for producing a plasma within a reaction chamber, and determining a plasma process end point on the basis of an inflection point of the measured physical quantity in relation to the passing of time.

Abstract: The purpose of the present invention is to obtain an electrode wiring structure for semiconductor devices that can suppress the occurrence of Al voids inside aluminum alloy wiring without regard to the orientation of such aluminum alloy wiring. An interlayer insulator film 11, a titanium layer 12, a titanium nitride layer 13 that serves as the barrier layer, an aluminum alloy wiring layer 15 and a protective film 18 are formed on top of the silicon substrate 10 to compose the electrode structure. In this case, a distortion relaxation layer 14, with a film thickness of approximately over 10 nm and which is an intermetallic compound that includes aluminum and titanium in its composition, is formed in between the titanium nitride layer 13 and the aluminum alloy wiring layer 15. Because of this distortion relaxation layer, for every wiring width of 1 .mu.m, the number of Al voids with widths of over 0.3 .mu.m is practically reduced to 0.

Abstract: A microwave excitation plasma processing apparatus comprises a vacuum container having a plasma generating chamber at an upper portion thereof and a processing chamber, a gas supply pipe for supplying a process gas into the plasma generating chamber, a dielectric window arranged in an opening of an upper wall portion of the vacuum container, a rectangular waveguide arranged on the upper wall portion of the vacuum container including the dielectric window and comprising a first wall having a first surface perpendicular to a direction of electric field of a microwave to oppose the dielectric window, second walls having second surfaces parallel to the direction of electric field of the microwave and extending in a direction perpendicular to the first surface, and a third wall having a third surface which is provided on a side opposite to a microwave introducing side perpendicular to the first and second surfaces to reflect the microwave, and a microwave oscillator for introducing the microwave into the waveguide

Abstract: A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H resptively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.

Abstract: An electrode for semiconductor devices, which can restrain the occurrence of Al voids and has a high barrier effect, is obtained by inserting a material which has a close resemblance in crystal structure to the barrier layer of a contact part and the aluminum alloy with the crystal surface thereof being oriented mainly at the (111) plane into the interface between the above barrier layer and the aluminum alloy. A semiconductor device according to the present invention comprises a silicon substrate, an interlayer insulating film partially formed on the silicon substrate, a titanium silicide layer formed on the silicon substrate at the part where the interlayer insulating film is not formed, a titanium layer formed on the interlayer insulating film and connected to the titanium silicide layer, a titanium nitride layer formed on the titanium layer and the titanium silicide layer, a Ti--Al--N layer such as Ti.sub.3 AlN and formed on the titanium nitride layer, and an aluminum alloy (Al-1%Si-0.

Abstract: A capillary for an optical fiber connector which is low in machining cost and a process for producing the same is provided. The capillary for an optical fiber connector of the present invention comprises a cylindrical ceramics sintered body, and having a straight-hole like narrow hole 3 with a slightly larger inner diameter than an outer diameter of the optical fiber bare line for passing the bare line of the optical fiber therethrough, and a tip surface for connection at which the narrow hole opens; and an inner surface of the narrow hole being substantially a sintered surface. Therefore, a number of steps of grinding of the inner surface of the narrow hole is markedly reduced thin the conventional capillary for an optical fiber connector so that production cost can be reduced to a low amount.

Abstract: A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H respectively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.

Abstract: This invention provides a condensed pyrazole derivative of the Formula (1): ##STR1## (where A denotes CH or N, R.sup.0 and R.sup.3 denote same or different, a hydrogen atom or a lower alkyl group, R.sup.1 and R.sup.2 denote same or different, a hydrogen atom, a lower alkyl group, a lower alkoxy group, a lower alkylthio group, a nitro group or a halogen atom, m denotes 1 or 2, and n denotes 1, 2 or 3, provided that, when n is 2, two R.sup.2 may be connected to each other to form a lower alkylenedioxy group), or its pharmaceutically acceptable salt. This derivative or its salt is excellent in the effect of inhibiting the expression of action of androgen, thereby being excellent in therapeutical effect of benign prostatic hypertrophy, prostatic carcinoma, etc., and has a long lasting of efficacy and high oral absorption.

Abstract: The invention discloses a pyrimidien derivative expressed in Formula [I]: ##STR1## where R.sup.1 denotes a hydrogen atom or hydroxyl group, R.sup.2 denotes a hydrogen atom, lower alkoxycarbonyl group, lower alkoxy group, halogen atom, lower alkyl group, cycloalkyl group with 3 to 8 carbon atoms, lower alkoxycarbonyl lower alkyl group, carboxyl group, carboxy lower alkyl group, group: --CONHR.sup.6 (R.sup.

Abstract: This invention provides a condensed pyrazole derivative of the Formula (1): ##STR1## (where A denotes CH or N, R.sup.0 and R.sup.3 denote same or different, a hydrogen atom or a lower alkyl group, R.sup.1 and R.sup.2 denote same or different, a hydrogen atom, a lower alkyl group, a lower alkoxy group, a lower alkylthio group, a nitro group or a halogen atom, m denotes 1 or 2, and n denotes 1, 2 or 3, provided that, when n is 2, two R.sup.2 may be connected to each other to form a lower alkylenedioxy group), or its pharmaceutically acceptable salt. This derivative or its salt is excellent in the effect of inhibiting the expression of action of androgen, thereby being excellent in therapeutical effect of benign prostatic hypertrophy, prostatic carcinoma, etc., and has a long lasting of efficacy and high oral absorption.

Abstract: A display control apparatus includes a display control block with plural external connector terminals, and an oscillator block including plural oscillators. The external connector terminals are coupled to a selector for selecting one of the terminals in response to a selection signal applied thereto, with the output of the selector connected to the internal display control circuit via a second gate. A predetermined one of the terminals is coupled via a first gate to the internal display control circuit. The selection signal is coupled to the external connector terminals other than the predetermined terminal via a third gate. When the oscillator block of one type is used, the apparatus operates in a first operating mode, in which the first and third gates are closed and the second gate is opened, and when the oscillator block is of another type, the apparatus operates in a second mode in which the first and third gates are opened and the second gate is closed.