Abstract: An object of the present invention is to provide an ink composition for manufacturing an organic semiconductor device, the ink composition allowing an organic semiconductor material with a rigid main chain into an ink having an optimal solute concentration for a single-crystal formation process. The present invention provides an ink composition for manufacturing an organic semiconductor device, the ink composition including at least one solvent selected from Naphthalene Compound (A) and at least one solute. The isomer content of Naphthalene Compound (A) is preferably 2% or less in terms of a percentage for peak area with Naphthalene Compound (A) being 100% in gas chromatography. Naphthalene Compound (A): a compound represented by Formula (a), where in Formula (a), R is as defined in the description.

Abstract: Provided is a conductor material having high conductivity. The conductor material according to an embodiment of the present disclosure has a configuration in which a conjugated polymeric compound having an electron donating group containing a heteroatom in a side chain is doped with a dopant containing an anion selected from a nitrogen anion, a boron anion, a phosphorus anion and an antimony anion, and a counter cation. The anion is preferably an anion represented by Formula (1) below: where R1 and R2 are identical or different, and each represent an electron withdrawing group; and R1 and R2 may be bonded to each other to form a ring with an adjacent nitrogen atom.

Abstract: Provided is a dopant with which a conductor material having high electrical conductivity can be formed. The present disclosure relates to a dopant containing a radical cation represented by Formula (1) and a counter anion. In Formula (1), R1 to R3 may be the same or different, and each denotes a monovalent aromatic group or a group represented by Formula (r). at least one of R1 to R3 is a group represented by Formula (r), and n indicates the valence of the radical cation and is equal to the quantity (n) of nitrogen atoms in the formula. In Formula (r), Ar1, Ar2, and Ar3 may be the same or different, and each denotes a divalent aromatic group, and Ar4, Ar5, Ar6, and Ar7 may be the same or different, and each denotes a monovalent aromatic group optionally having a substituent represented by Formula (sb) below. Furthermore, m and n may be the same or different, and each represents an integer of 0 or greater.

Abstract: Provided is a compound that is excellent in chemical stability, has a high solubility in a solvent, and exhibits an excellent carrier mobility. A compound represented by Formula (1): where in Formula (1), X1, X2, X3, and R1 to R10 are as defined in the specification.

Abstract: An object of the present invention is to provide an ink composition for manufacturing an organic semiconductor device, the ink composition allowing an organic semiconductor material with a rigid main chain into an ink having an optimal solute concentration for a single-crystal formation process. The present invention provides an ink composition for manufacturing an organic semiconductor device, the ink composition including at least one solvent selected from Naphthalene Compound (A) and at least one solute. The isomer content of Naphthalene Compound (A) is preferably 2% or less in terms of a percentage for peak area with Naphthalene Compound (A) being 100% in gas chromatography. Naphthalene Compound (A): a compound represented by Formula (a), where in Formula (a), R is as defined in the description.

Abstract: Provided is a composition for manufacturing an organic semiconductor device, the composition enabling formation of an organic semiconductor device that stably shows high carrier mobility. A composition for manufacturing an organic semiconductor device contains 2,3-dihydrobenzofuran as a solvent and an organic semiconductor material below, in which the water content of the solvent is 0.25 wt % or less. The organic semiconductor material: at least one compound selected from the group consisting of a compound represented by formula (1-1), a compound represented by formula (1-2), a compound represented by formula (1-3), a compound represented by formula (1-4), a compound represented by formula (1-5), and a compound represented by formula (1-6).

Abstract: Provided is a solvent for organic transistor production. The solvent has excellent solubility for organic semiconductor materials and enables formation of an organic transistor having high crystallinity. The solvent according to the present invention for organic transistor production includes a solvent A represented by Formula (a). In the formula, Ring Z represents a ring selected from an aromatic carbon ring, a 5- to 7-membered alicyclic carbon ring, and a 5- to 7-membered heterocyclic ring; R1 represents a group selected from oxo, thioxy, —ORa, —SRa, —O(C?O)Ra, —RbO(C?O)Ra, and substituted or unsubstituted amino; and R2 represents a group selected from hydrogen, C1-C7 alkyl, aryl, and —ORa, where R1 and R2 may be linked to each other to form a ring with one or more carbon atoms constituting Ring Z.

Abstract: Solvent or solvent composition for organic transistor production, which is excellent in solubility of an organic semiconductor material, and which can form an organic transistor high in crystallinity. The solvent or solvent composition for organic transistor is a solvent or solvent composition for organic semiconductor material dissolution, and includes a solvent ‘A’ represented by the formula (R1)N(R2)—C(?O)—(R3)N(R4) wherein R1 to R4 are the same or different, and each represents a C1-2 alkyl group, or R1 and R4 may be bound to one another to form a ring together with the —N(R2)—C(?O)—N(R3)— moiety as well as an organic semiconductor material.

Abstract: Provided is an insulating coating composition. The composition is highly safe, in which an organic material to form an insulating film is dissolved highly stably. The composition can form an insulating film by coating, where the insulating film has a low relative permittivity, a high insulation resistance, and high wettability and allows an upper layer to be formed thereon by coating. The insulating coating composition according to the present invention contains a cyclic olefin copolymer and a solvent. The cyclic olefin copolymer is a copolymer between a cyclic olefin and a chain olefin. The solvent includes a compound represented by Formula (1) and having a normal boiling point of 100° C. to lower than 300° C. In Formula (1), Ring Z is a ring selected from a 5- or 6-membered saturated or unsaturated cyclic hydrocarbon and a benzene ring; and R1 is selected from a hydrocarbon group and acyl. Ring Z has a substituent or substituents including the R1O group.

Abstract: Provided is a composition for manufacturing an organic semiconductor device, the composition enabling formation of an organic semiconductor device that stably shows high carrier mobility. A composition for manufacturing an organic semiconductor device contains 2,3-dihydrobenzofuran as a solvent and an organic semiconductor material below, in which the water content of the solvent is 0.25 wt % or less. The organic semiconductor material: at least one compound selected from the group consisting of a compound represented by formula (1-1), a compound represented by formula (1-2), a compound represented by formula (1-3), a compound represented by formula (1-4), a compound represented by formula (1-5), and a compound represented by formula (1-6).

Abstract: There is provided a composition being excellent in the dissolvability of an organic semiconductor material and being capable of forming an organic semiconductor device having a high carrier mobility by using a printing method under a low-temperature environment. The composition for producing an organic semiconductor device according to the present invention comprises an organic semiconductor material and solvent (A). The organic semiconductor material is an N-shaped fused-ring n-conjugated molecule; and solvent (A) is a compound represented by formula (a). In the formula, L represents a single bond, —O—, —NH—C(?O)—NH—, —C(?O)—, or —C(?S)—; k represents an integer of 0 to 2; R1 represents a group selected from C1-20 alkyl, C2-20 alkenyl, C3-20 cycloalkyl, —ORa, —SRa, —O(C?O)Ra, —RbO(C?O)Ra or substituted or unsubstituted amino; and t represents an integer of 1 or more.

Abstract: Provided is an insulating coating composition. The composition is highly safe, in which an organic material to form an insulating film is dissolved highly stably. The composition can form an insulating film by coating, where the insulating film has a low relative permittivity, a high insulation resistance, and high wettability and allows an upper layer to be formed thereon by coating. The insulating coating composition according to the present invention contains a cyclic olefin copolymer and a solvent. The cyclic olefin copolymer is a copolymer between a cyclic olefin and a chain olefin. The solvent includes a compound represented by Formula (1) and having a normal boiling point of 100° C. to lower than 300° C. In Formula (1), Ring Z is a ring selected from a 5- or 6-membered saturated or unsaturated cyclic hydrocarbon and a benzene ring; and R1 is selected from a hydrocarbon group and acyl. Ring Z has a substituent or substituents including the R1O group.

Abstract: Provided is a solvent for organic transistor production. The solvent has excellent solubility for organic semiconductor materials and enables formation of an organic transistor having high crystallinity. The solvent according to the present invention for organic transistor production includes a solvent A represented by Formula (a). In the formula, Ring Z represents a ring selected from an aromatic carbon ring, a 5- to 7-membered alicyclic carbon ring, and a 5- to 7-membered heterocyclic ring; R1 represents a group selected from oxo, thioxy, —ORa, —SRa, —O(C?O)Ra, —RbO(C?O)Ra, and substituted or unsubstituted amino; and R2 represents a group selected from hydrogen, C1-C7 alkyl, aryl, and —ORa, where R1 and R2 may be linked to each other to form a ring with one or more carbon atoms constituting Ring Z.

Abstract: Provided is a solvent or solvent composition for organic transistor production. The solvent or solvent composition allows an organic semiconductor material to dissolve therein with high solubility and can form a highly crystalline organic transistor. The solvent or solvent composition for organic transistor production according to the present invention is a solvent or solvent composition for dissolution of an organic semiconductor material and includes a solvent A represented by Formula (A). In Formula (A), R1 is selected from C1-C4 alkyl, C1-C4 acyl, a C5-C6 cycloalkane ring, a C5-C6 cycloalkene ring, C6-C12 aryl, and a group including two or more of them bonded to each other. R2, R3, R4, and R5 are, identically or differently in each occurrence, selected from hydrogen, C1-C4 alkyl, and C1-C4 acyl. R6 is selected from C1-C4 alkyl and C1-C4 acyl. R1 and R3 may be linked to each other to form a ring with the adjacent oxygen atom and carbon atom; n represents 1 or 2; and m represents an integer from 0 to 2.

Abstract: Provided is a solvent or solvent composition for organic transistor production that is excellent in solubility of an organic semiconductor material and that can form an organic transistor high in crystallinity. The solvent or solvent composition for organic transistor production according to the present invention is a solvent or solvent composition for organic semiconductor material dissolution, including a solvent A represented by the following formula (A). In the formula (A), R1 to R4 are the same or different, and represent a C1-2 alkyl group. R1 and R4 may be bound to each other to form a ring together with —N(R2)—C(?O)—N(R3)— in the formula.

Abstract: The disclosure provides a diesel engine, which includes an engine body mounted in a vehicle and having a cylinder to be supplied with fuel containing diesel fuel as its main component, a geometric compression ratio ? of the cylinder being set within a range of 12:1 to 15:1, and an EGR system for allowing a part of burned gas to exist inside of the engine body cylinder when the engine body is at least in a particular operating state where an engine load and an engine speed are relatively low. The EGR system includes an EGR passage at least partially formed inside the engine body, and having a predetermined or shorter passage, an EGR control valve provided in a course of the EGR passage and for adjusting a flow rate of the burned gas inside the EGR passage, and a controller for controlling an opening of the EGR control valve.

Abstract: An injector of a diesel engine has a first injection valve and a second injection valve disposed to face each other with respect to the center of a combustion chamber. Assuming that a straight line passing through the first injection valve and the second injection valve is a symmetrical line, one of two regions obtained by dividing a planar region of a combustion chamber (3) into two along the symmetrical line is a first region, and the other of the two regions is a second region, the first injection valve injects fuel toward the first region, and the second injection valve injects fuel toward the second region. A cavity portion is formed in the top surface of a piston. The first injection valve and the second injection valve respectively have injection holes at radially inner positions than the periphery of the cavity portion in plan view.

Abstract: A diesel engine body is provided with a geometric compression ratio ? within a range of 12:1 to 15:1. The engine body has an intake valve for opening and closing an intake passage of a cylinder, an exhaust valve for opening and closing an exhaust passage of the cylinder, and an exhaust gas re-circulation passage communicating with the intake and exhaust passages and for partially re-circulating exhaust to the intake passage. During low engine load and rotation speed conditions, the exhaust valve is opened during an intake stroke, and the intake passage is choked. The exhaust valve is closed before the intake valve in the later stage of the intake stroke. An opening area SE of the exhaust valve is set so that a ratio of SE to an opening area SI of the intake valve meets a relation of: 0.01×(15??)+0.02?SE/SI?0.17.

Abstract: The disclosure provides a diesel engine, which includes an engine body mounted in a vehicle and having a cylinder to be supplied with fuel containing diesel fuel as its main component, a geometric compression ratio ? of the cylinder being set within a range of 12:1 to 15:1, and an EGR system for allowing a part of burned gas to exist inside of the engine body cylinder when the engine body is at least in a particular operating state where an engine load and an engine speed are relatively low. The EGR system includes an EGR passage at least partially formed inside the engine body, and having a predetermined or shorter passage, an EGR control valve provided in a course of the EGR passage and for adjusting a flow rate of the burned gas inside the EGR passage, and a controller for controlling an opening of the EGR control valve.

Abstract: A diesel engine body is provided with a geometric compression ratio ? within a range of 12:1 to 15:1. The engine body has an intake valve for opening and closing an intake passage of a cylinder, an exhaust valve for opening and closing an exhaust passage of the cylinder, and an exhaust gas re-circulation passage communicating with the intake and exhaust passages and for partially re-circulating exhaust to the intake passage. During low engine load and rotation speed conditions, the exhaust valve is opened during an intake stroke, and the intake passage is choked. The exhaust valve is closed before the intake valve in the later stage of the intake stroke. An opening area SE of the exhaust valve is set so that a ratio of SE to an opening area SI of the intake valve meets a relation of: 0.01×(15??)+0.02?SE/SI?0.