Abstract: According to one embodiment, an imaging device includes a semiconductor layer, an electrode, first and second insulating films, and a light blocking film. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface, and includes pixels configured to detect light. The electrode is provided on the first surface and is configured to control an output of the pixels. The first insulating film is provided on the second surface. The second insulating film is provided on the first insulating film and has a smaller refractive index in a visible light range than the first insulating film. One end of the light blocking film is located in the second insulating film or at a same level as a surface of the second insulating film. Another end of the light blocking film is located in the semiconductor layer.

Abstract: According to one embodiment, an imaging device includes a semiconductor layer, an electrode, first and second insulating films, and a light blocking film. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface, and includes pixels configured to detect light. The electrode is provided on the first surface and is configured to control an output of the pixels. The first insulating film is provided on the second surface. The second insulating film is provided on the first insulating film and has a smaller refractive index in a visible light range than the first insulating film. One end of the light blocking film is located in the second insulating film or at a same level as a surface of the second insulating film. Another end of the light blocking film is located in the semiconductor layer.

Abstract: A method for manufacturing a semiconductor device is provided, which comprises forming a first metal wiring layer above a semiconductor substrate, forming an inorganic insulating film above the first metal wiring layer, forming an organic insulating film on the inorganic insulating film, forming a recess in the organic insulating film, forming a reactive layer on the side surface of the recess, the reactive layer being capable of reaction under heat with the organic insulating film, applying a heat treatment to the reactive layer so as to permit the reactive layer to react with the organic insulating film while leaving an unreacted reactive layer, thereby allowing the reaction layer to grow on the side surface of the recess, the recess being diminished by the growth of the reaction layer, and removing the unreacted reactive layer to obtain a diminished recess.

Abstract: A method for manufacturing a semiconductor device is provided, which comprises forming a first metal wiring layer above a semiconductor substrate, forming an inorganic insulating film above the first metal wiring layer, forming an organic insulating film on the inorganic insulating film, forming a recess in the organic insulating film, forming a reactive layer on the side surface of the recess, the reactive layer being capable of reaction under heat with the organic insulating film, applying a heat treatment to the reactive layer so as to permit the reactive layer to react with the organic insulating film while leaving an unreacted reactive layer, thereby allowing the reaction layer to grow on the side surface of the recess, the recess being diminished by the growth of the reaction layer, and removing the unreacted reactive layer to obtain a diminished recess.

Abstract: A method for manufacturing a semiconductor device having slit-embedded type wires is provided. The method includes steps of forming a first insulating layer 12 on a semiconductor substrate 11, forming the contact plug 15 in a predetermined area of the first insulating layer 12, and forming the protective insulating layer 20 on the first insulating layer 12 including the contact plug 15. The method further includes steps of forming a second insulating layer 16 on the protective insulating layer 20, forming the opening 17 reaching the protective insulating layer 20 in a predetermined area of the second insulating layer 16 to form the wiring slit 17′, and embedding the metallic wire 18 in the wiring slit 17′ and connecting to the contact plug 15.