Abstract: A solid-state imaging device includes a plurality of photoelectric transducers disposed in an array in a semiconductor layer. Each photoelectric transducer includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The first and second regions are in direct contact. An isolation region is between each adjacent pair of photoelectric transducers. The isolation region includes an insulating material extending from a surface of the semiconductor layer and a third semiconductor region of the first conductivity type surrounding the insulating material. The third semiconductor region is between the insulating material and the first semiconductor region, and the first semiconductor region is between the second and third semiconductor regions.

Abstract: A solid-state imaging device includes a first-conductive semiconductor layer, a second-conductive semiconductor layer that is provided on the first-conductive semiconductor layer, a light receiving element that is formed in the second-conductive semiconductor layer, and an element isolation region that is formed to surround the light receiving element in an in-plane direction of the second-conductive semiconductor layer, in which the element isolation region includes a first-conductive first element isolation unit that is connected to the first-conductive semiconductor layer, a hollow that is formed on the first-conductive first element isolation unit, and a first-conductive second element isolation unit that is formed on the hollow.