Patents by Inventor Takesi Kuragaki

Takesi Kuragaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective dry etching method for compound semiconductor and production method of semiconductor device
    Patent number: 5370767
    Abstract: A selective ECR dry etching method for etching compound semiconductors includes dry etching an In-containing compound semiconductor material in an ECR plasma of a Cl.sub.2 /He mixture with a Cl.sub.2 /(He+Cl.sub.2) ratio from 0.05 to 0.2 and a gas pressure below 4.0.times.10.sup.-4 Torr. A selective ECR dry etching method includes dry etching a compound semiconductor material including no Al selectively with respect to a compound semiconductor material including Al using a plasma in an Cl.sub.2 /He/O.sub.2 mixture with a ratio of Cl.sub.2 /(He+Cl.sub.2) ratio within 0.05 to 0.2 and O.sub.2 less than 30% of the Cl.sub.2 gas at a gas pressure below 5.0.times.10.sup.-4 Torr.
    Type: Grant
    Filed: September 24, 1993
    Date of Patent: December 6, 1994
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Shinichi Miyakuni, Takesi Kuragaki