Abstract: Incident light transmitted through a semiconductor substrate is shielded at a boundary between pixels. An imaging element is provided with a pixel, a front surface side light shielding unit, and a back surface side light shielding unit. The pixel is provided with a photoelectric conversion unit that is arranged in a semiconductor substrate on a front surface side of which a wiring region is formed and performs photoelectric conversion of incident light applied from a back surface side of the semiconductor substrate. The front surface side light shielding unit is embedded on the front surface side of the semiconductor substrate at the boundary between the pixels to shield the incident light.

Abstract: A solid-state imaging device, including a semiconductor substrate; a photoelectric conversion region in the semiconductor substrate that generates charges in response to light incident thereon; an electric charge holding region in the semiconductor substrate and capable of holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out from the electric charge holding region; a transfer gate that effects transfer of electric charges generated in the photoelectric conversion region to the electric charge holding region; a light blocking film over an upper surface of the transfer gate; and an insulating layer over the substrate and between the semiconductor substrate and the light blocking film, wherein, a portion of the insulating layer over the photoelectric conversion region is more thinly formed than the insulating layer not over the photoelectric conversion region.

Abstract: A solid-state imaging device, including a semiconductor substrate; a photoelectric conversion region in the semiconductor substrate that generates charges in response to light incident thereon; an electric charge holding region in the semiconductor substrate and capable of holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out from the electric charge holding region; a transfer gate that effects transfer of electric charges generated in the photoelectric conversion region to the electric charge holding region; a light blocking film over an upper surface of the transfer gate; and an insulating layer over the substrate and between the semiconductor substrate and the light blocking film, wherein, a portion of the insulating layer over the photoelectric conversion region is more thinly formed than the insulating layer not over the photoelectric conversion region.

Abstract: A solid-state image pickup element includes: a photoelectric conversion region formed in a semiconductor substrate; an electric charge holding region formed in the semiconductor substrate for holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out; a transfer gate formed on the semiconductor substrate for transferring electric charges generated by photoelectric conversion in the photoelectric conversion region to the electric charge holding region, and a light blocking film formed on an upper surface of the transfer gate. In this case, a portion between the semiconductor substrate and the light blocking film is thinly formed as a light made incident to the photoelectric conversion region has a longer wavelength in a wavelength region.

Abstract: A solid-state image pickup element includes: a photoelectric conversion region formed in a semiconductor substrate; an electric charge holding region formed in the semiconductor substrate for holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out; a transfer gate formed on the semiconductor substrate for transferring electric charges generated by photoelectric conversion in the photoelectric conversion region to the electric charge holding region, and a light blocking film formed on an upper surface of the transfer gate. In this case, a portion between the semiconductor substrate and the light blocking film is thinly formed as a light made incident to the photoelectric conversion region has a longer wavelength in a wavelength region.

Abstract: Leakage current generated in a PN junction diode is reduced, and charge-up current caused by plasma treatment in formation of wiring connected to the PN junction diode is controlled. An N+ region as a first conductive type impurity region provided in a Si substrate with an upper surface being exposed on one main surface of the Si substrate, a P+ polysilicon plug provided with a bottom being contacted with an upper surface of the N+ region, and wiring connected to a top of the P+ polysilicon plug are included.

Abstract: A semiconductor device includes a substrate, a first oxide film lying on the substrate, a thin semiconductor film lying on the first oxide film, a first terminal formed on the semiconductor film, a second terminal formed on the semiconductor film, a semiconductor element formed on the semiconductor film and electrically connected between the first and second terminals, and a protective diode formed on the semiconductor film and electrically connected in between the second and first terminal in a forward direction.

Abstract: Leakage current generated in a PN junction diode is reduced, and charge-up current caused by plasma treatment in formation of wiring connected to the PN junction diode is controlled. An N+ region as a first conductive type impurity region provided in a Si substrate with an upper surface being exposed on one main surface of the Si substrate, a P+ polysilicon plug provided with a bottom being contacted with an upper surface of the N+ region, and wiring connected to a top of the P+ polysilicon plug are included.