Patents by Inventor Taketo Imaizumi

Taketo Imaizumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4449063
    Abstract: A fundamental logic circuit used, for example, in an electronic computer, comprising an output inverter transistor and a switching transistor which discharges a base charge stored in a storage capacitance in a base-emitter junction of the output inverter transistor when the output inverter transistor changes from the turned on condition to the turned off condition.
    Type: Grant
    Filed: August 22, 1980
    Date of Patent: May 15, 1984
    Assignee: Fujitsu Limited
    Inventors: Hitoshi Ohmichi, Hiromu Enomoto, Yasushi Yasuda, Yoshiharu Mitono, Taketo Imaizumi
  • Patent number: 4409495
    Abstract: A Schmitt trigger circuit has an input-voltage hysteresis characteristic for reducing noise sensitivity and preventing oscillation. In its input stage there is a multi-emitter transistor, and in its output stage a second transistor. The multi-emitter transistor comprises a first emitter and a second emitter. The first emitter is associated with a switching operation in response to the input voltage applied to the base of the multi-emitter transistor. The second emitter is associated with the operation of drawing charges from the base of the second transistor through the base of the multi-emitter transistor to the ground. The use of the multi-emitter transistor prevents the input current from increasing greatly as the input voltage falls.
    Type: Grant
    Filed: May 29, 1981
    Date of Patent: October 11, 1983
    Assignee: Fujitsu Limited
    Inventors: Hiromu Enomoto, Yoshiharu Mitono, Yasushi Yasuda, Taketo Imaizumi, Hiroshi Ohta
  • Patent number: 4388755
    Abstract: A structure and method for manufacturing semiconductor devices by the master slice method, in which various kinds of semiconductor devices are manufactured through utilization of a common master pattern and a plurality of different kinds of selective wiring patterns. A number of bipolar transistors each having plural emitter regions, is formed in a predetermined region, or portion, of a semiconductor substrate by employing a common master pattern, and the plural emitter regions of the respective bipolar transistors are selectively connected by the associated wiring patterns of each thereof to form corresponding bipolar transistors of different, predetermined D.C. characteristics. When manufacturing many different kinds of semiconductor devices by the master slice method, the area which would be wasted on the semiconductor substrate by prior art techniques is greatly reduced, thus providing for enhanced area efficiency.
    Type: Grant
    Filed: November 17, 1980
    Date of Patent: June 21, 1983
    Assignee: Fujitsu Limited
    Inventors: Hiromu Enomoto, Yasushi Yasuda, Yoshiharu Mitono, Taketo Imaizumi, Hitoshi Ohmichi