Abstract: In a method of forming a mark pattern according to the embodiments, a film to be processed on a substrate is coated with a photosensitive film, and the photosensitive film is irradiated with exposure light via a mask. On the mask, a first circuit pattern having a first transmittance and a mark having a second transmittance and used to measure a superposition between films are arranged. By irradiating with the exposure light, a second circuit pattern having a first film thickness and a mark pattern having a second film thickness thinner than the first film thickness are formed on the substrate.

Abstract: According to an embodiment, a mask processing apparatus is provided. The mask processing apparatus includes a stage, a laser light source and a rotary mechanism. The stage is configured to hold a mask formed with a pattern to be transferred to a transfer target substrate. The laser light source is configured to output laser light that is radiated into the mask and thereby alters the mask. The rotary mechanism is configured to rotate the stage in an in-plane direction of a pattern formation surface of the mask.

Abstract: In a method of forming a mark pattern according to the embodiments, a film to be processed on a substrate is coated with a photosensitive film, and the photosensitive film is irradiated with exposure light via a mask. On the mask, a first circuit pattern having a first transmittance and a mark having a second transmittance and used to measure a superposition between films are arranged. By irradiating with the exposure light, a second circuit pattern having a first film thickness and a mark pattern having a second film thickness thinner than the first film thickness are formed on the substrate.

Abstract: According to one embodiment, there is provided a substrate holding device, in which, when a substrate is mounted on a chuck main body, gas is exhausted from a space between the substrate and a bottom face part, to hold the substrate by suction. The chuck main body includes a plurality of pins fixed to the bottom face part in a mounting area for a substrate. Two or more movable bottom portions are disposed to cover the mounting area for the substrate and to be movable in an extending direction of the pins, in a state where the pins are inserted in the movable bottom portions.

Abstract: According to an embodiment, a mask processing apparatus is provided. The mask processing apparatus includes a stage, a laser light source and a rotary mechanism. The stage is configured to hold a mask formed with a pattern to be transferred to a transfer target substrate. The laser light source is configured to output laser light that is radiated into the mask and thereby alters the mask. The rotary mechanism is configured to rotate the stage in an in-plane direction of a pattern formation surface of the mask.

Abstract: A photo mask for exposing according to an embodiment includes a mark pattern arranged in a mark region that is different from an effective region to form a semiconductor device; and a regular pattern arranged in the mark region and around the mark pattern and smaller than the mark pattern in size and pitch.

Abstract: A photo mask for exposing according to an embodiment includes a mark pattern arranged in a mark region that is different from an effective region to form a semiconductor device; and a regular pattern arranged in the mark region and around the mark pattern and smaller than the mark pattern in size and pitch.

Abstract: According to one embodiment, an overlay measuring method includes calculating a first symmetry center coordinate on a basis of reflected light from first and second overlay measurement marks formed by using a first layer, calculating a second symmetry center coordinate on a basis of reflected light from third and fourth overlay measurement marks by using a second layer, and calculating an overlay displacement amount in a predetermined direction between the first layer and the second layer on a basis of the first and second symmetry center coordinates, in which the first to fourth overlay measurement marks have a plurality of space widths or pattern widths in the predetermined direction.