Abstract: A washing machine includes a washing machine housing having electrical conducting properties and having an earth connection portion, a leaked water tub having electrical insulating properties and installed in a bottom part of the washing machine housing for accumulating leaked water, an electrode for detecting presence or absence of the leaked water in the leaked water tub, a leaked water detection circuit connected to the electrode, the leaked water detection circuit having an electrical insulating function, a retaining member having electrical insulating properties and retaining the electrode, and an attachment member having electrical conducting properties and attaching the electrode to the washing machine housing via the retaining member. The attachment member is electrically connected to the washing machine housing. In the leaked water tub, a lowest end of the attachment member is positioned on the lower side of a lowest end of the electrode. Thereby, a safe and inexpensive washing machine is realized.

Abstract: A washing machine includes a washing machine housing having electrical conducting properties and having an earth connection portion, a leaked water tub having electrical insulating properties and installed in a bottom part of the washing machine housing for accumulating leaked water, an electrode for detecting presence or absence of the leaked water in the leaked water tub, a leaked water detection circuit connected to the electrode, the leaked water detection circuit having an electrical insulating function, a retaining member having electrical insulating properties and retaining the electrode, and an attachment member having electrical conducting properties and attaching the electrode to the washing machine housing via the retaining member. The attachment member is electrically connected to the washing machine housing. In the leaked water tub, a lowest end of the attachment member is positioned on the lower side of a lowest end of the electrode. Thereby, a safe and inexpensive washing machine is realized.

Abstract: A circuit for biasing an FET, comparing a gate bias voltage of the FET with a reference voltage at an operational amplifier and performing closed-loop control on the gate bias voltage of the FET with the output of the operational amplifier. The temperature characteristics of the mutual conductance of the FET is compensated by setting the temperature characteristics of one or both of two voltage dividing resistors. Variations in a drain bias current due to input signal level and temperature changes can be suppressed. The circuit at the gate and the circuit at the drain are separate, making possible class A, class AB, and class B operations. The voltage drop at the gate resistor can be ignored so that the gate resistor can be designed with priority given to stability of the RF characteristics.

Abstract: A semiconductor device which can effectively prevent impurity diffusion in heat treatment for electrically activating the impurity, and a manufacturing method thereof are disclosed. In the semiconductor device, a diffusion preventing layer having a depth equal to or greater than a junction depth of source/drain regions is formed along the entire junction region of the source/drain regions. The diffusion preventing layer is formed near the surface at the side of a gate insulation layer of the gate electrode including impurity.

Abstract: A circuit for biasing an FET, comparing a gate bias voltage of the FET with a reference voltage at an operational amplifier and performing closed-loop control on the gate bias voltage of the FET with the output of the operational amplifier. The temperature characteristics of the mutual conductance of the FET is compensated by setting the temperature characteristics of one or both of two voltage dividing resistors. Variations in a drain bias current due to input signal level and temperature changes can be suppressed. The circuit at the gate and the circuit at the drain are separate, making possible class A, class AB, and class B operations. The voltage drop at the gate resistor can be ignored so that the gate resistor can be designed with priority given to stability of the RF characteristics.

Abstract: A semiconductor device which can effectively prevent impurity diffusion in heat treatment for electrically activating the impurity, and a manufacturing method thereof are disclosed. In the semiconductor device, a diffusion preventing layer having a depth equal to or greater than a junction depth of source/drain regions is formed along the entire junction region of the source/drain regions. The diffusion preventing layer is formed near the surface at the side of a gate insulation layer of the gate electrode including impurity.

Abstract: A communication apparatus includes a first detector for detecting a calling signal from a line, a tone generator for generating quasi-calling tone and sending it out to the line, a second detector for detecting a signal indicating the data communication from a calling station, and a control unit for starting the data communication in response to the detection by the second detector. The second detector detects the signal while the tone generator sends out the quasi-calling tone when the calling signal is received.

Abstract: An ion implantation method for a substrate of (100) silicon is disclosed in which the implantation is performed on a substrate which is tilted with respect to an incident ion beam and is rotated in its own plane by 15.degree. to 75.degree. from a position in which the (110) crystal planes of the silicon would be aligned with the incident ion beam. The substrate is then rotated in its own plane by 90.degree., 180.degree., and 270.degree. from its initial position and ion implantation is performed at each position using the same dose of ions. The initial angle of rotation is preferably about 45.degree..

Abstract: An image processing apparatus comprises: a processor to process image data of an orginial document; an image memory to store the image data; a single manual switch; a detector to detect the depression time of the manual switch; a selector to select whether all of the image data is stored or not in accordance with the depression time; and a discriminating circuit to discriminate whether the number of partner apparatuses to perform the transmission in the processor is one or plural. When one partner apparatus is designated, the image data is directly transmitted. When a plurality of partner apparatuses are designated, the image data is once stored into the image memory and thereafter, the image data in the memory is transmitted. Either the single copy mode or the multi copy mode is sequentially periodically selected in accordance with the depression time of the manual switch, i.e., copy start key.

Abstract: A communication apparatus includes a first detector for detecting a calling signal from a line, a tone generator for generating quasi-calling tone and sending it out to the line, a second detector for detecting a signal indicating the data communication from a calling station, and a control unit for starting the data communication in response to the detection by the second detector. The second detector detects the signal while the tone generator sends out the quasi-calling tone when the calling signal is received.