Abstract: A sensor includes a substrate, a reference electrode provided above the substrate, a lower electrode provided above the reference electrode via an insulating film, and an upper electrode provided above the lower electrode via a physical quantity detecting film. The upper electrode and the lower electrode form a parallel-plate-type detection capacitor, and the lower electrode and the reference electrode form a parallel-plate-type reference capacitor.

Abstract: A sensing device includes a lead frame, a first insulating film, a semiconductor integrated circuit chip provided over the lead frame via the first insulating film, and a first bonding wire via which an external derivation lead and the semiconductor integrated circuit chip are electrically coupled to each other. The sensing device includes a sensor chip disposed over the semiconductor integrated circuit chip such that a first surface of the sensor chip faces the semiconductor integrated circuit chip. The sensing device includes a sensor provided on a second surface of the sensor chip. The sensing device includes a molding resin with which the lead frame, the semiconductor integrated circuit chip, the sensor chip, and the first bonding wire are sealed. The sensor chip is electrically coupled to the semiconductor integrated circuit chip, and the molding resin has an opening in which the sensor is exposed.

Abstract: A humidity detecting device includes a semiconductor substrate including at least one impurity diffusion layer, a heating unit formed by the at least one impurity diffusion layer, and a humidity detecting unit. The humidity detecting unit includes a plurality of insulating films laminated on the semiconductor substrate, a lower electrode disposed over the heating unit via a first insulating film among the insulating films, a humidity sensitive film disposed on a second insulating film among the insulating films, so as to cover the lower electrode, and an upper electrode disposed on the humidity sensitive film.

Abstract: A method for manufacturing a semiconductor device includes providing a wafer that includes a device region and a peripheral region of the device region, the device region including multiple chip regions. The method includes removing a portion of the peripheral region such that the removed portion has an annular shape. The method includes forming a protective layer on a first surface of the wafer. The method includes grinding a second surface of the wafer in which the protective layer is formed on the first surface.

Abstract: A humidity sensor includes a lower electrode formed above a substrate, a first humidity sensing film covering the lower electrode, an upper electrode formed above the first humidity sensing film, and a second humidity sensing film covering the upper electrode and making contact with the first humidity sensing film through openings of the upper electrode. The upper electrode has a predetermined opening pattern. The area of the upper electrode is larger than the area of the lower electrode, and is smaller than the area of the first humidity sensing film.

Abstract: A moisture detector includes a sensor chip and a moisture determining unit. The sensor chip includes a humidity detector having a detection surface on which to measure humidity, and also includes a heater heating the detection surface, and the moisture determining unit is configured to, after causing the heater to start heating, determine whether moisture is present on the detection surface based on a difference in changes in the humidity measured by the humidity detector.

Abstract: A sensor includes a substrate, a reference electrode provided above the substrate, a lower electrode provided above the reference electrode via an insulating film, and an upper electrode provided above the lower electrode via a physical quantity detecting film. The upper electrode and the lower electrode form a parallel-plate-type detection capacitor, and the lower electrode and the reference electrode form a parallel-plate-type reference capacitor.

Abstract: A sensor includes a substrate, a reference electrode provided above the substrate, a lower electrode provided above the reference electrode via an insulating film, and an upper electrode provided above the lower electrode via a physical quantity detecting film. The upper electrode and the lower electrode form a parallel-plate-type detection capacitor, and the lower electrode and the reference electrode form a parallel-plate-type reference capacitor.

Abstract: A sensor includes a semiconductor substrate, a detector disposed above the semiconductor substrate and configured to output a signal in accordance with a physical quantity, an electrostatic discharge protection circuit including a metal-oxide-semiconductor transistor, and a dummy pattern formed above the semiconductor substrate and formed of a same material as a material of a gate electrode, the gate electrode being included in the electrostatic discharge protection circuit.

Abstract: A humidity sensor includes a lower electrode formed on a substrate, a first moisture sensitive layer covering the lower electrode, an upper electrode formed on the first moisture sensitive layer, and having a predetermined opening pattern including a plurality of openings, and a second moisture sensitive layer covering the upper electrode, and the second moisture sensitive layer contacts the first moisture sensitive layer at the openings of the upper electrode.

Abstract: A moisture detector includes a sensor chip and a moisture determining unit. The sensor chip includes a humidity detector having a detection surface on which to measure humidity, and also includes a heater heating the detection surface, and the moisture determining unit is configured to, after causing the heater to start heating, determine whether moisture is present on the detection surface based on a difference in changes in the humidity measured by the humidity detector.

Abstract: A detecting device includes a semiconductor substrate and a detecting unit disposed over the semiconductor substrate, the detecting unit being configured to output a signal in response to a physical property. The detecting device includes a noise suppressing layer disposed below the detecting unit and in the semiconductor substrate, or, disposed between the detecting unit and the semiconductor substrate.

Abstract: A humidity detecting device includes a semiconductor substrate including at least one impurity diffusion layer, a heating unit formed by the at least one impurity diffusion layer, and a humidity detecting unit. The humidity detecting unit includes a plurality of insulating films laminated on the semiconductor substrate, a lower electrode disposed over the heating unit via a first insulating film among the insulating films, a humidity sensitive film disposed on a second insulating film among the insulating films, so as to cover the lower electrode, and an upper electrode disposed on the humidity sensitive film.

Abstract: A humidity sensor includes a first semiconductor chip having a first side and a second side opposing each other, and including a humidity sensing part and pads arranged along the first side, a second semiconductor chip mounted with the first semiconductor chip and configured to process signals input via bonding wires coupled to the pads, and an encapsulating member having an opening exposing the humidity sensing part. The opening has a center position closer to the second side than a center position of the first semiconductor chip.

Abstract: A sensor includes a substrate, a reference electrode provided above the substrate, a lower electrode provided above the reference electrode via an insulating film, and an upper electrode provided above the lower electrode via a physical quantity detecting film. The upper electrode and the lower electrode form a parallel-plate-type detection capacitor, and the lower electrode and the reference electrode form a parallel-plate-type reference capacitor.

Abstract: A sensor includes a semiconductor substrate, a detector disposed above the semiconductor substrate and configured to output a signal in accordance with a physical quantity, an electrostatic discharge protection circuit including a metal-oxide-semiconductor transistor, and a dummy pattern formed above the semiconductor substrate and formed of a same material as a material of a gate electrode, the gate electrode being included in the electrostatic discharge protection circuit.

Abstract: A humidity sensor includes a lower electrode formed above a substrate, a first humidity sensing film covering the lower electrode, an upper electrode formed above the first humidity sensing film, and a second humidity sensing film covering the upper electrode and making contact with the first humidity sensing film through openings of the upper electrode. The upper electrode has a predetermined opening pattern. The area of the upper electrode is larger than the area of the lower electrode, and is smaller than the area of the first humidity sensing film.

Abstract: A humidity sensor includes a lower electrode formed on a substrate, a first moisture sensitive layer covering the lower electrode, an upper electrode formed on the first moisture sensitive layer, and having a predetermined opening pattern including a plurality of openings, and a second moisture sensitive layer covering the upper electrode, and the second moisture sensitive layer contacts the first moisture sensitive layer at the openings of the upper electrode.

Abstract: A physical quantity detection device includes a glass substrate, a substrate including a physical quantity detection part and bonded to a first surface of the glass substrate with a hermetically sealed space being formed inside the substrate, and a function membrane formed on a second surface of the glass substrate opposite to the first surface. The function membrane prevents the second surface of the glass substrate from coming into contact with moisture in the atmosphere.